2SJ21 Search Results

2SJ21 Datasheets (101)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SJ21	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	90.68KB	1
2SJ21	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	80.61KB	1
2SJ210	Kexin	P-Channel MOSFET for Switching	Original	PDF	39.91KB	1
2SJ210	NEC	Semiconductor Selection Guide 1995	Original	PDF	3.25MB	226
2SJ210	NEC	Semiconductor Selection Guide	Original	PDF	3MB	399
2SJ210	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	113.15KB	1
2SJ210	Unknown	FET Data Book	Scan	PDF	108.17KB	2
2SJ210	NEC	MOS FIELD EFFECT TRANSISTOR	Scan	PDF	371.87KB	6
2SJ210	NEC	P-Channel MOS FET for Switching	Scan	PDF	371.87KB	6
2SJ210-L	NEC	P-channel MOS FET	Scan	PDF	371.87KB	6
2SJ210-T1B	NEC	P-channel MOS FET	Scan	PDF	371.87KB	6
2SJ210-T2B	NEC	P-channel MOS FET	Scan	PDF	371.87KB	6
2SJ211	Kexin	P-Channel MOSFET for Switching	Original	PDF	39.58KB	1
2SJ211	NEC	Semiconductor Selection Guide 1995	Original	PDF	3.25MB	226

2SJ211	NEC	Semiconductor Selection Guide	Original	PDF	3MB	399
2SJ211	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	113.15KB	1
2SJ211	Unknown	FET Data Book	Scan	PDF	108.17KB	2
2SJ211	NEC	P-CHANNEL MOS FET FOR SWITCHING	Scan	PDF	401.21KB	6
2SJ211	NEC	P-Channel MOS FET for Switching	Scan	PDF	401.21KB	6
2SJ211-L	NEC	P-channel MOS FET	Scan	PDF	401.21KB	6

2SJ21 Price and Stock

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Renesas Electronics Corporation


Renesas Electronics Corporation 2SJ213(T1-AZ) Trans MOSFET P-CH 100V 0.5A 4-Pin(3+Tab) SC-62 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SJ213(T1-AZ)		57,695		355	1 - 10 - 100 - 1000 $0.88 10000 $0.78	Buy Now
Renesas Electronics Corporation 2SJ211(0)-T1B-A P-CHANNEL MOSFET FOR SWITCHING
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SJ211(0)-T1B-A		21,000		905	1 - 10 - 100 - 1000 $0.38 10000 $0.34	Buy Now
Rochester Electronics	2SJ211(0)-T1B-A		21,000		1	1 - 10 - 100 $0.37 1000 $0.31 10000 $0.27	Buy Now
Renesas Electronics Corporation 2SJ210(0)-T1B-AT P-CHANNEL MOSFET FOR SWITCHING
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SJ210(0)-T1B-AT		21,000		855	1 - 10 - 100 - 1000 $0.40 10000 $0.36	Buy Now
Rochester Electronics	2SJ210(0)-T1B-AT		21,000		1	1 - 10 - 100 $0.39 1000 $0.32 10000 $0.29	Buy Now
Renesas Electronics Corporation 2SJ216-E 2SJ216-E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	2SJ216-E		17,585		54	1 - 10 - 100 $6.69 1000 $5.99 10000 $5.63	Buy Now
	2SJ216-E		782		54	1 - 10 - 100 $6.69 1000 $6.34 10000 $6.34	Buy Now
	2SJ216-E		240		54	1 - 10 - 100 $6.69 1000 $6.69 10000 $6.69	Buy Now
Rochester Electronics	2SJ216-E		18,607		1	1 - 10 - 100 $5.35 1000 $4.79 10000 $4.50	Buy Now
Renesas Electronics Corporation 2SJ210(0)-T1B-A P-Channel MOSFET For Switching
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SJ210(0)-T1B-A		12,813		855	1 - 10 - 100 - 1000 $0.40 10000 $0.36	Buy Now
Rochester Electronics	2SJ210(0)-T1B-A		12,813		1	1 - 10 - 100 $0.39 1000 $0.32 10000 $0.29	Buy Now

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2SJ21 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
marking PP Abstract: 2SJ213 mosfet vgs 5v vds 100v MOSFET SMD pp Contextual Info: MOSFET SMD Type MOS Fied Effect Transistor 2SJ213 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Features +0.1 2.50-0.1 Directly driven by Ics having a 5V poer supply. Has low on-state resistance RDS on =4.2 MAX.@VGS=-1.0V,ID=-0.3A 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1	Original	2sj213 ot-89 -100v -300ma +3marking pp mosfet vgs 5v vds 100v mosfet smd pp	PDF
2SJ211 Abstract: N15j Contextual Info: •At In MOS FIELD EFFECT TRANSISTOR 2SJ211 P-CHANNEL MOS FET FOR SWITCHING T he 2 S J 2 1 1 , P-channel vertical ty p e M O S F E T , is a sw itching device PACKAGE DIMENSIONS Unit : mm source. 2.8 ±0.2 1.5 w hich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V p ow er	OCR Scan	2sj211 n15j	PDF
2SJ210 Abstract: MARK H16 2SJ21 T200 T400 Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SJ210 P-CHANNEL MOS FET FOR SWITCHING The 2SJ210, P-channel vertical type MOS FET, is a switching device OUTLINE DIMENSIONS Unit : mm which can be driven directly by the output of ICs having a 5 V power 2.8 ± 0.2 source. 1.5	OCR Scan	2sj210 mark h16 2sj21 t200 +1t400	PDF
Hitachi DSA001651 Contextual Info: 2SJ218 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive	Original	2sj218 hitachi dsa001651	PDF
2SJ215 Abstract: Hitachi DSA001651 Contextual Info: 2SJ215 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive	Original	2sj215 hitachi dsa001651	PDF
2SJ219 Abstract: Hitachi 2SJ Hitachi DSA001651 Contextual Info: 2SJ219 L , 2SJ219(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive	Original	2sj219 hitachi 2sj hitachi dsa001651	PDF
2SJ214 Abstract: 2sj172 2SJ214S Hitachi 2SJ Hitachi DSA001651 Contextual Info: 2SJ214 L , 2SJ214(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive	Original	2sj214 2sj172 2sj214s hitachi 2sj +1hitachi dsa001651	PDF
2SJ218 Abstract: 2SJ217 Hitachi Scans-001 Contextual Info: 2SJ218 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive	OCR Scan	2sj218 2sj217 hitachi scans-001	PDF
j172 Abstract: 2SJ214S 2SJ214L 2SJ214 Contextual Info: 2SJ214 L , 2SJ214(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive	OCR Scan	2sj214 2sj214cs j172 2sj214s +12sj214l	PDF
2SJ211 Contextual Info: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE _ _ _ 2SJ211 P-CHANNEL MOS FET FOR SW ITCHING The 2SJ211, P-channel vertical type MOS FET, is a s w itch ing device P A C K A G E DIMENSIONS Unit : mm w h ich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V power	OCR Scan	2sj211	PDF
Contextual Info: DATA SHEET NEC / MOS FIELD EFFECT TRAN SISTO R _ 2SJ213 P-CHANNEL MOS FET FOR SW ITCHING The 2S J213, P-channel vertical type MOS FET, is a sw itch ing device PACKAGE DIMENSIONS Unit : mm w hich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V pow er	OCR Scan	2sj213 ir30-00 vp15-00 ws60-00	PDF
2SJ211 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 •A t I n MOS FIELD EFFECT TRANSISTOR 2SJ211 P-CHANNEL MOS FET FOR SWITCHING The 2SJ211, P-channel vertical type MOS F ET, is a switching device	OCR Scan	2sj211	PDF
2SJ217 Abstract: 2SJ218 Contextual Info: HITACHI 2SJ218-SILICON P-C H AN N EL MOS FET HIGH SPEED POWER SWITCHING cm •FEATURES # Low ON-Resistance # High Speed Switching # High Speed Switching # 4 V Gate Drive Device - Can be driven from 5V source l.O a ic 2. Drain # Suitable for Motor Drive, DC-DC Converter,	OCR Scan	2sj218-2sj217 2sj218	PDF
2SJ216 Abstract: Hitachi DSA001651 Contextual Info: 2SJ216 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device _ Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive	Original	2sj216 hitachi dsa001651	PDF

Contextual Info: 2SJ215 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive	OCR Scan	2sj215	PDF
Contextual Info: 2SJ216- 44Tb2DS OGie^bT I?«? « H i m HITACHI/ OPTOELECTRONICS hlE D SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FE A T U R E S # Low On-Resistance # High Speed Switching # Low Drive Current # 4 V Gate Drive Device - Can be driven from 5V source	OCR Scan	2sj216 44tb2ds jb20s dd12t72	PDF
2SJ213 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ213 P-CHANNEL MOS FET FOR SWITCHING The 2SJ213, P-channel vertical type MOS F ET, is a switching device	OCR Scan	2sj213	PDF
Contextual Info: 2SJ219 L , 2SJ219(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive	OCR Scan	2sj219 2sj173	PDF
2SJ216 Abstract: 2SJ215 Hitachi 2SJ Hitachi DSA00514 Contextual Info: 2SJ216 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive	Original	2sj216 d-85622 2sj215 hitachi 2sj +1hitachi dsa00514	PDF
Contextual Info: 2SJ217 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive	OCR Scan	2sj217	PDF
2SJ213 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ213 P-CHANNEL MOS FET FOR SWITCHING The 2SJ213, P-channel vertical type MOS F ET, is a switching device PACKAGE DIMENSIONS Unit : mm which can be driven directly by the o utp ut o f ICs having a 5 V power source.	OCR Scan	2sj213	PDF
h18 smd transistor Abstract: smd marking H18 SMD Transistor h18 SOT 23 marking H18 2SJ211 mosfet vgs 5v vds 100v Contextual Info: MOSFET SMD Type MOS Fied Effect Transistor 2SJ211 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Not necessary to consider driving current because of 1 0.55 Directly driven by Ics having a 5V poer supply. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1	Original	2sj211 ot-23 -10ma h18 smd transistor +4smd marking h18 smd transistor h18 sot 23 marking h18 mosfet vgs 5v vds 100v	PDF
2SJ212 Abstract: T500 t500 06 60 05 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ212 P-CHANNEL MOS FET FOR S W IT C H IN G The 2SJ212, P-channel vertical type MOS FET, is a switching device	OCR Scan	2sj212 t500 t500 06 60 05	PDF
WE74 Abstract: 2SJ212 Contextual Info: NEC M O S Field Effect Transistor 2SJ212 M O S FET KBm 2SJ212Ü P f- ì* -t' /l'MM MOS F E T T \ 5 V ïtï 3 U C ¿0 £H* fc i § W M m W iW ^ T tÊ * X ^ -{È • mm -f ' y f - > * M O S F E T i i : t >ffiijL*s'fg <, X ^ y f > 7 & H b ü t l Z U § £ £ > ,	OCR Scan	2sj212i we74 2sj212	PDF

2SJ21 Search Results

2SJ21 Datasheets (101)

2SJ21 Price and Stock

Renesas Electronics Corporation 2SJ213(T1-AZ)

Renesas Electronics Corporation 2SJ211(0)-T1B-A

Renesas Electronics Corporation 2SJ210(0)-T1B-AT

Renesas Electronics Corporation 2SJ216-E

Renesas Electronics Corporation 2SJ210(0)-T1B-A

2SJ21 Datasheets Context Search

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