2SJ132 Search Results

2SJ132

Abstract: Scans-009532
Contextual Info: M O S Field E ffect P o w e r T ransistors 2SJ1 32,1 32-Z n # o n y , 7 1 .«:%. <Vc*=- 4 V> f/> r Kft« *•<•[«T“f . H Rum-1 <- 0.25 0> n t c n + H M l ' . # : . k A H t r t A V ' m n 2SJ132 Z B ' W r ' l . - K I C 1 t * U Ä J i 'l '> - K t o r .JÄ T + .

Contextual Info: 2SJ132 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)20 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SJ132,132-Z P-CHANNEL POWER MOSFET FOR SWITCHING <R> FEATURES PACKAGE DRAWING UNIT: mm 5.0 ±0.2 Unit VGS = 0 V −30 V VGSS VDS = 0 V m20 V Drain current (DC) ID(DC) TC = 25°C m2.0 A Drain current (pulse) ID(pulse)

2sJ132 MOSFET

Abstract: 2SJ132 2SJ132-Z 132-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SJ132,132-Z P-CHANNEL POWER MOSFET FOR SWITCHING PACKAGE DRAWING UNIT: mm FEATURES 6.5 ±0.2 • 2SJ132-Z is a lead process product and is ideal for mounting a hybrid IC. 5.0 ±0.2 −30 V VGSS VDS = 0 V m20

D1619

Abstract: NEC semiconductor 2SJ132 2SJ132-Z C11531E 2sj132 FET
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Gate drive available at logic level (VGS = −4 V) • High current control available in small dimension due to low RDS(on) (≅ 0.25 Ω)

J132Z

Contextual Info: P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2 S J 1 3 2 -Z D E S C R IP TIO N The 2SJ132-Z is P-Channel MOS Field E ffe c t Power Transistor designed fo r solenoid, m o to r and lamp driver. F E A TU R E S • 4 V Gate Drive — Logic level — • Low R DS on>

2SJ132

Abstract: PW300 TC628 132-Z 2SJ132-Z
Contextual Info: データ・シート MOS形電界効果パワー・トランジスタ MOS Field Effect Power Transistors 2SJ132,132-Z Pチャネル・パワーMOSFET スイッチング用 特 外形図（単位：mm） ★ 徴 6.5 ±0.2 ○2SJ132-ZはハイブリッドIC実装に最適なリード加工品です。

2sj111

Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116 2SJ117 2SJ118

2SJ132

Abstract: 2SJ132-Z
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SJ132

Abstract: 2SJ132-Z
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

for1a

Abstract: 2SJ132 PVS100 K020
Contextual Info: N E C ELECTRONICS INC 642752 5 N E C Tfl ELEC TR ONI CS INC DE | b 4 5 7 S E S 98D 19031 NEC MOS FIELD OOITDHI 2 2J±a2 0 . 5 = 0.1 J3 Absolute Maximum Ratings Ta=25*C Drain to Source Voltage YDSS . -30V Gate to Source Voltage VGSS ± 20V Continuous Drain Current

2sk4145

Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
Contextual Info: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

2sk4145

Abstract: 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080
Contextual Info: PowerMOSFET Product Overview www.renesas.eu 2010.04 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: Renesas uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

2sk520

Abstract: 3sk131 cross 2S880 TRANSISTOR AF 416 pnp 2SK738 2SK739 3SK133A 2sc3554 transistor pnp 3906 2SK508
Contextual Info: TY P E NO. CROSS IN D E X TYPE No. A PPLIC ATIO N & STRUCTURE PACKAGE PAGE 1S2835 ANODE COMMON SWITCHING DIO DE M IN I MOLD 83 1S2836 ANO DE COMMON SWITCHING DIODE M IN I MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE M IN I MOLD 86 1S2838 CATHODE COMMON SWITCHING DIOOE

2sk1060

Abstract: 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234
Contextual Info: Transistor Field Effect Transistor Small Signal FET • 2SK type Junction type Part number Absolute maximum ratings (TA = 25 °C) Package Electrical characteristics (TA = 25 °C) VGDO (V) ID (mA) PT (mW) |Yfs1| Applications IDSS (mA) (ms) TYP. 2.5 TYP. 2SK104

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

MICROPROCESSOR Z80

Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

2SJ132

Abstract: 2sj1327
Contextual Info: V=7 > M O S Field E ffe c t P o w e r T r a n s i s t o r s 2SJ1 32,1 32-Z P ^ < 7 — * -f & M O S F E T y >vm jimm « •J a Vcs = - 4 V X-'S)Y— httÎÎJAiBrfl-T-f, y? u c f i Ruse.) 0 2 S J 132-Z 0.25 Q ) t •? K K iB -X â T -f. (Ta = 25 ”C) Iff

2sj111

Abstract: 2SJ131 2SJ112 2SJ110 2SJ122 2SK722 2SJ121 2sj135 2SJ106 2SJ129
Contextual Info: - 18 - §ü % tt € m tit ià ië f f j II =e 1 K 2SJ106 L F A, A - S W 2SJ107 L F A, A ~ S W j fë £ V* V * t* (V) ft * W. X I* ft (A) P d/ Pc h (max) (A) (W) M 4# te (max) (V) Vd s (V) (Ta=25Tï) I gss Vg s (V) (min) (A) (max) V d s (A) (V) (min) (V)

transistor NEC 2SK2500

Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid