2SK195 Search Results

2SK195 Datasheets (71)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK195	NEC	Semiconductor Selection Guide 1995	Original	PDF	3.25MB	226
2SK195	NEC	Small Signal FET(Junction type) FM tuner	Original	PDF	89.68KB	12
2SK195	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	166.4KB	1
2SK195	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	123.7KB	1
2SK195	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	101.94KB	1
2SK195	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF	51.7KB	1
2SK195	Unknown	FET Data Book	Scan	PDF	101.28KB	2
2SK1950	Hitachi Semiconductor	Mosfet Guide	Original	PDF	6.15MB	1147
2SK1950	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF	137.39KB	1
2SK1950	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	71.83KB	1
2SK1950	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	68.79KB	1
2SK1950	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	51.6KB	1
2SK1950L	Renesas Technology	Silicon N-Channel MOS FET	Original	PDF	28.33KB	5
2SK1950(L)(S)	Unknown	FET Data Book	Scan	PDF	113.16KB	2

2SK1950S	Renesas Technology	Silicon N-Channel MOS FET	Original	PDF	28.33KB	5
2SK1951	Hitachi Semiconductor	Mosfet Guide	Original	PDF	6.15MB	1147
2SK1951	Hitachi Semiconductor	Silicon N Channel MOS FET	Original	PDF	184.45KB	3
2SK1951	Renesas Technology	Silicon N-Channel MOS FET	Original	PDF	35.35KB	5
2SK1951	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF	221.5KB	2
2SK1951	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	71.83KB	1

2SK195 Price and Stock

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Renesas Electronics Corporation 2SK1958-T1-A Trans MOSFET N-CH 16V 0.1A 3-Pin SC-70 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK1958-T1-A		60,067		5,848	1 - 10 - 100 - 1000 - 10000 $0.06	Buy Now
Rochester Electronics	2SK1958-T1-A		60,067		1	1 - 10 - 100 $0.06 1000 $0.05 10000 $0.05	Buy Now
Renesas Electronics Corporation 2SK1959(T1-AZ) Trans MOSFET N-CH 16V 2A 4-Pin(3+Tab) SC-62 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK1959(T1-AZ)		16,377		433	1 - 10 - 100 - 1000 $0.72 10000 $0.64	Buy Now
Renesas Electronics Corporation 2SK1954-Z-E1-AZ Trans MOSFET N-CH 180V 4A 3-Pin(2+Tab) TO-252 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK1954-Z-E1-AZ		12,451		143	1 - 10 - 100 - 1000 $2.36 10000 $2.23	Buy Now
Quest Components	2SK1954-Z-E1-AZ		36,922			1 $1.21 10 $1.21 100 $1.21 1000 $1.21 10000 $0.36	Buy Now
Rochester Electronics	2SK1954-Z-E1-AZ		12,451		1	1 - 10 - 100 $2.11 1000 $1.89 10000 $1.78	Buy Now
Renesas Electronics Corporation 2SK1957(E) Trans MOSFET N-CH Si 200V 7A 3-Pin(3+Tab) TO-220FM Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK1957(E)		1,871		143	1 - 10 - 100 - 1000 $2.36 10000 $2.23	Buy Now
NEC Electronics Group 2SK1959-T1 Trans MOSFET N-CH 16V 2A 4-Pin(3+Tab) SC-62 Tray
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SK1959-T1		1,995			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	2SK1959-T1		792			1 $1.10 10 $1.10 100 $0.55 1000 $0.44 10000 $0.44	Buy Now

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2SK195 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2SK1952 Silicon N C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC	OCR Scan	2sk1952 2sk1911	PDF
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1954,1954-Z SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION <R> PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 voltage switching applications. +0.2 The 2SK1954 is N-channel MOS Field Effect Transistor designed for high	Original	2sk1954 1954-z o-252	PDF
TC787 Abstract: LT 7824 2SK1958 T210 T460 T540 TSS045 diode lt 0236 SA-0897 FET2SK1958 Contextual Info: JI -7\ l?\ I IK NEC M O S F ield E ffe c t T ra n s is to r 2SK1958 MOS F E T 2SK1958 Ü 1 .5 V \| g f j j ^ 7 V N f - ^ / l 4 i ^ M O S F E T T'i> 9, Æ îtŒ T - lg ÿ jT 'ë , f r o K ÿ 4 7 l i ^ £ # # : m m ) J l 1 - S £ > g f r & ^ £ :iò , ^ -y F ^ > x f w i ü i l / t 'r " ^ # / 7 4- ¿f	OCR Scan	2sk1958 iei-620 izbti14 tc787 +8lt 7824 t210 t460 t540 tss045 diode lt 0236 sa-0897 fet2sk1958	PDF
Contextual Info: 2SK1952 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter	OCR Scan	2sk1952 o-220fm	PDF
Contextual Info: # a 2j J f c ' ' r 7 — M O S F E T M O S Field E ffect P o w e r Transistors 2S K19 5 4 ,2SK 19 54-Z N f ^ ; k N 0 ,7 - M O S F E T jim m 2SK1954 l ì N f- ^ * s u m ? '* '7 - MOS F E T T * is 0 Si JW]' X -i -y f- > DC-D C a V ^ - i ' C i l T ' t o # m	OCR Scan	2sk1954	PDF
2SK1959 Abstract: C10535E MEI-1202 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1959 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1959 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS in mm it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an	Original	2sk1959 c10535e mei-1202	PDF
2SK1957 Abstract: DSA003639 Contextual Info: 2SK1957 Silicon N-Channel MOS FET ADE-208-1336 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter,Motor Control	Original	2sk1957 ade-208-1336 o-220fm dsa003639	PDF
Contextual Info: 2SK1957 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistanee High speed switching L ow drive current N o Secondary Breakdown Suitable for Sw itching regulator, DC - DC converter,M otor Control	OCR Scan	2sk1957 o-220fm	PDF
2SK1953 Abstract: MEI-1202 TEA-1035 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1953 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	OCR Scan	2sk1953 iei-1209 mei-1202 tea-1035	PDF
Contextual Info: IC SMD SMD Type Type Product specification 2SK1959 SOT-89 Features Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low ON resistance RDS on =3.2 MAX.@VGS=1.5V,ID=50mA 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.48-0.1 +0.1 0.80-0.1	Original	2sk1959 ot-89	PDF
Hitachi DSA002781 Contextual Info: 2SK1957 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter,Motor Control Outline	Original	2sk1957 o-220fm d-85622 hitachi dsa002781	PDF
2SK1957 Contextual Info: 2SK1957 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC – DC converter,Motor Control	Original	2sk1957 220fm	PDF
2SK1954 Abstract: 2SK1954-Z MEI-1202 TEA-1035 Contextual Info: DATA SHEET ir NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1954, 2SK1954-Z » - M SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2S K1954 is N -channel M O S Field Effect Transistor in millimeters	OCR Scan	2sk1954 2sk1954-z iei-1209 mei-1202 +1tea-1035	PDF
NEc hemt Abstract: 2SK1953 2SK1963 2SK2043 2SK1951 2SK1952 2SK1954 2SK1958 2SK1959 2SK1960 Contextual Info: - 126 - H f m £ ít % m m « it i A A 5È 1 K V m * * * (V) « fér , R, L (A) * :t * less (max) (A) (W) Vg s (V) (min) (A) SE W (Ta=25‘ C) (min) (max) V d s (V) (V) (V) (max) Vd s (A) (V) (min) (S) (t$ Id (A) Vd s ’ (V) Id (A) 2SK1951 B Ì 'HS PSW, DDC	OCR Scan	2sk1951 2sk1952 2sk1953 2sk1954 +111954-z 2sk195t 90nstyp 2sk1991 2sk1992 nec hemt 2sk1963 2sk2043 2sk1958 2sk1959 2sk1960	PDF

2SK1957 Abstract: Hitachi DSA00395 Contextual Info: 2SK1957 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter,Motor Control Outline	Original	2sk1957 o-220fm hitachi dsa00395	PDF
2SK1954 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1954,1954-Z SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 voltage switching applications. +0.2 The 2SK1954 is N-channel MOS Field Effect Transistor designed for high	Original	2sk1954 1954-z	PDF
Contextual Info: 2SK1957 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed pow er switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter,M otor Control	OCR Scan	2sk1957 o-220fm	PDF
2Sk1951 Abstract: Hitachi DSA001652 Contextual Info: 2SK1951 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter	Original	2sk1951 o-220fm d-85622 hitachi dsa001652	PDF
S 170 MOSFET TRANSISTOR Abstract: S 170 TRANSISTOR 2SK1954 Contextual Info: IC MOSFET SMD Type MOS Field Effect Power Transistor 2SK1954 Features TO-252 Low on-resistance RDS on =0.65 (VGS=10V,ID=2A) +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25	Original	2sk1954 o-252 300pf s 170 mosfet transistor +1s 170 transistor	PDF
2SK1959 Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK1959 SOT-89 Features Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low ON resistance RDS on =3.2 MAX.@VGS=1.5V,ID=50mA 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.48-0.1 +0.1	Original	2sk1959 ot-89	PDF
nec 7905 Abstract: 2SK1953 7905 Nec TC-7905 applications OF IC 7905 TC-2447 Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1953 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1953 is N -channel M O S Field Effect Transistor designed fo r high voltage switching applications. FEATURES • Low On-state Resistance	OCR Scan	2sk1953 iei-1209 nec 7905 7905 nec +3tc-7905 applications of ic 7905 tc-2447	PDF
Hitachi DSA002748 Abstract: N5030 Contextual Info: 2SK1957 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter,Motor Control	Original	2sk1957 o-220fm d-85622 hitachi dsa002748 +1n5030	PDF
Hitachi DSA001652 Contextual Info: 2SK1950 L , 2SK1950(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC - DC converter	Original	2sk1950 d-85622 hitachi dsa001652	PDF
Contextual Info: Transistors IC SMD Type Type SMD Product specification 2SK1954 Features TO-252 Low on-resistance RDS on =0.65 (VGS=10V,ID=2A) +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25	Original	2sk1954 o-252 300pf	PDF

2SK195 Search Results

2SK195 Datasheets (71)

2SK195 Price and Stock

Renesas Electronics Corporation 2SK1958-T1-A

Renesas Electronics Corporation 2SK1959(T1-AZ)

Renesas Electronics Corporation 2SK1954-Z-E1-AZ

Renesas Electronics Corporation 2SK1957(E)

NEC Electronics Group 2SK1959-T1

2SK195 Datasheets Context Search

TC787

2SK1959

2SK1957

2SK1953

Hitachi DSA002781

2SK1957

2SK1954

NEc hemt

2SK1957

2SK1954

2Sk1951

S 170 MOSFET TRANSISTOR

2SK1959

nec 7905

Hitachi DSA002748

Hitachi DSA001652