2SJ11 Search Results

2sj111

Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116 2SJ117 2SJ118

2sj117

Abstract: Hitachi 2SJ Hitachi DSA002756 hitachi 2sj117
Contextual Info: 2SJ117 Silicon P-Channel MOS FET Application High speed power switching Features • • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators.

2SJ113

Contextual Info: blE D I MMT h ED S DGI STO S äST « H I T H 2SJ113 HITACHI/ OPTOELECTRONICS ~ SILICON P-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER -(2-* Com plem entary pair w ith 2 S K 3 9 9 • FEATURES • Low On-Resistance. • High Speed Switching.

DIODE T25 4

Abstract: 2SJ112 DIODE T25 DIODE T25 4 C DIODE T25 4 IO 2SK39A II-60 kos0 DIODE T25 4 lo
Contextual Info: T3 HITACHI/-COPTOELECTRONICS} D E | 4MTtiS0S DQlGOBfl 0 73C 10038 ^7rgrB^TT5 R TTTiU H I / U P I O b L h L I H U N iu t > D 2SK398 S IL IC O N N -C H A N N E L M O S FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER C o m p le m e n ta ry pair w ith 2SJ112

2SK398

Abstract: XSJ112
Contextual Info: 2SJ112 V V 3 > P f - t * JU M P S FET SILIC O M P-CHANNEL MOS F E T HIGH SPEED POW ER SWITCHING HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2 S K 3 9 8 2 S K 3 9 8 t 3 > y ; * > 5» 'J 'N-r SAUL Jtiai if 1• //I * 1\\ 1 ^ z. I _ #40 JE D E C TO-3

diode t25 4 HO

Abstract: diode b34 b34 diode 2SJ117 11X1 2SK310 Hitachi Scans-001
Contextual Info: blE D 441b2G5 DDIE^IM flbl « H I T H 2SJ117 H ITA CH I/tO PTO ELEC TR O N IC S SILICON P-CHANNEL MOS FET 1 HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SK310 • FEATURES • High Breakdown Voltage. • High Speed Switching.

Contextual Info: b lE D 441b2G 5 2SJ117 D D IE ^ IM flbl « H I T H H IT A C H I/tO P T O E L E C T R O N IC S SILICON P-CHANNEL MOS FET 1 HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SK310 • FEATURES • High Breakdown Voltage. •

mg15g1al3

Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
Contextual Info: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673

2sk405 2sj115

Abstract: 2SJ11 2SK405 2SJ115
Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ115 SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 03.2x0.2 1 5l9 MAX . FEATURES: . High Breakdown Voltage v DSS=-160V . High Forward Transfer Admittance IYf s I=2.OS Typ. . Complementary to 2SK405

2SJ114

Abstract: diode t25 4 fo 11X1
Contextual Info: IHIT4 M4clbEGS □OlE'iOÛ Sbñ 2SJ114 H I T A C H I / OPTOELECTRONICS blE D S IL IC O N P -C H A N N E L M O S FET Öl HIGH SPEED POWER SW ITCHING, HIGH FREQUENCY POWER AMPLIFIER 4t« i.Qía2 • FEATURES • Low On-Resistance. • High Speed Switching.

2sj113

Abstract: 2SK399
Contextual Info: 2SJ113 y U=i> M O S FET SILICON P-CHANNEL M O S FET HIGH SP EED POWER SW ITCHING Complementary pair with 2SK 39 9 2SK399 t a > -f U * > $ y *C 7 5.0max. 1.5 1. y 2. — h i G ate Kl' " i y D rain 7 9 > x (F lan g e) 3. V — * I S ource 0.6 (D im ensions in mm)

2SK399

Abstract: 2SJ113 44TB2 diode lo2a GG13 J-10 Hitachi Scans-001
Contextual Info: MMTbEGS GOlBGHfc, Q5G • H I T M 2SK399 HITACHI/ OPTOELECTRONICS b lE ]) SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ113 I N ■ FEATURES • Low On-Resistance. • High Speed Switching.

2sk405 2sj115

Abstract: 2SJ115 2SK405
Contextual Info: M5E 3> m =10=17250 0 0 1 7 0 3 0 ITOSH 2 2SJ115 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE TOSHIBA DISCRETE/OPTO Unit in mm AUDI O FREQUENCY POWER AM PL IF IE R APPLICATION. 03.2 t. 0.2 FEATURES: . High Breakdown Voltage : V d s $=-160V . High Forward Transfer Admittance

transistor a103

Abstract: a103 transistor a103 m Transistor 2SJ115
Contextual Info: M5E 3> m =10=17250 0 0 1 7 0 3 0 ITOSH 2 TOSHIBA FIELD EFFECT TRANSISTOR 2SJ115 SILICON P CHANNEL MOS TYPE TOSHIBA DISCRETE/OPTO Unit in mm AUDI O FREQUENCY POWER AM PL IF IE R APPLICATION. 03.2 t. 0.2 FEATURES: . High Breakdown Voltage : V d s $=-160V . High Forward Transfer Admittance

2sj28

Abstract: 2SJ72 2sj26 2SJ83 2SJ99 2SJ96 2SJ18 2SJ82 2SJ90 2SJ73
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) Pd/Pch Tj/Tch min UP07 2N5465 2SJ10 2SJ11 2SJ12 2SJ13 2SJ15 2SJ16 2SJ17 2SJ18 2SJ19 2SJ20 2SJ21 2SJ22 2SJ26 2SJ27 2SJ28 2SJ29 2SJ32 2SJ33 2SJ39 2SJ40

2sk405 2sj115

Abstract: 2sj115 2SJ115/2SK405
Contextual Info: FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ115 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 15.9M A X . 0 3 .a ± O i8 FEATURES: O io| ri -«I . High Breakdown Voltage v DSS=-160V . High Forward Transfer Admittance IYfs I=2.OS Typ.

2sk405 2sj115

Abstract: 2SK405 2SJ115 2SJ115/2SK405
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK405 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mra 0 3 . 'Z ± O . Z FEATURES: . High Breakdown Voltage VDSS=1&0V . High Forward Transfoer Admittance |Yfs]=2.0S Typ. . Complementary to 2SJ115

2SK310

Abstract: 2SK311 3 phase UPS block diagram 2SJ117
Contextual Info: 2 S K 3 1 0 ,2 S K 3 1 1 y U 3 > N » * * J b M 0 S FET S IL IC O N N -C H A N N E L M O S FET 2SJ117 HIGH S P E E D PO W ER S W IT C H IN G C om p lem entary pair with 2 S J 1 1 7 1. Y — \ ! G ate 2. K V 's : D rain 7 7 > ÿ (F lange) 3. V — X ! Source

2SJ117

Contextual Info: 2SJ117 Silicon P-Channel MOS FET ADE-208-1180 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators.

2SK41

Abstract: 2sk413 HK-2-G 2SJ118 2SK414 2SK4132 GG13 fr diode 205 PM12A
Contextual Info: blE D • MM'IbSDS 00130bl 337 ■ HITH 2SK413,2SK414 H I T A C H I / { O P T O E L E C T R O N IC SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ118, 119 ■ FEATURES • • • • • Low On-Resistance.

2Sk398

Abstract: 2SJ112
Contextual Info: HITACHI/-COPTOELECTRONICS} l^ r e r S Y O b "73 DËJ 4 ^ 2 0 5 73C 1 0 0 38 H I T ÆU f f T / O H I U h L h C I H O N 1 T J S T 001D03Ö 0 D 2SK398— S IL IC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING. HIGH FREQUENCY POWER AMPLIFIER C o m p le m e n ta ry p a ir w ith 2SJ112

2sk1603

Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
Contextual Info: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378

2SJ117

Abstract: 2SK310
Contextual Info: 2SJ117 S I L I C O N P - C H A N N E L M O S FET 2 S K 3 1 0 t 3 'S'? ' > X ? • *S • * 4 ft y+y7x t - F ¿ O il* , • S^A ftflK C A SO M C i«* • X4 7f-y/u4-‘a U-*. DC-DCav/<-y. JED ECTO 220AB) ■ A B S O LU T E M A X IM U M R A T IN G S P O W E R VS.

Hitachi 2SJ

Abstract: Hitachi DSA0076 2SJ117 hitachi 2sj117
Contextual Info: 2SJ117 Silicon P-Channel MOS FET ADE-208-1180 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators.