44TB205 Search Results

D0130

Abstract: j120 2Sk416
Contextual Info: blE D 2 S K 4 1 e • y , 44Tb205 DG13n b 4 04b I 2 S K 4 1 6 HIT4 § H ITA C H I/{O P TO E LE C TR O N IC SILICON N-CHANNELMOS FET I 4 o HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER £>Tyr* T yp e Complementary pair with 2S J120 ■ FEATURES

2SK1230

Contextual Info: 2 S K 1 2 3 I 44Tb205 DD13Ebl ITT « H i m HITACHI / OPTOELECTRONICS blE T>- SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching 9 Low Drive Current 1. 2. 3. • No Secondary Breakdown • Suitable for Switching Regulator and

hitachi lm091xmln

Abstract: LM091XMLN CAN 8bits 24v lcd HD44780 HD44780 module lcd 2 x 12 HD44780
Contextual Info: HITACHI/ OPTOELECTRONICS LIE D 44Tb205 0012460 HITACHI Internal Pin Connection Pin No Svmbol Level t VSS - ov 2 VDD - -4-5V 3 VO - 4 RS H/L L : Instruction code inpu H : Data mput 5 R/W H/L L : Data read (LCD - MPU) H : Data write (LCD *• MPU) 20 characters x 2 lines

nel-d32

Abstract: LM020L lcd LM020L NEL-D3 NEC power supply LM020LN NEC NEL-D32-48
Contextual Info: HITACHI/ OPTOELECTRONICS blE D • 44Tb205 D[]]it?4G4 3DÔ ■ HIT‘1 HITACHI T^VA-3? LM020L LM020LN (EL Backlit Version) ■ 16 character x 1 line ■ Controller LSI H D 44780 is built-in (See page 115). IN T E R N A L PIN CONNECTION Pin N o. ■ +5V single power supply

bft sbs

Abstract: oloa+8888+LUBRICANT 2SK623 R20A
Contextual Info: blE D • 2SK623 MMTbEDS OQiailü ÖSb ■ H I T M HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING 02 ■ FEATURES 1 G a ie [2.8 • • • • • 2 Low On-Resistance High Speed Switching Low Drive Current 0 3 No Secondary Breakdown

Contextual Info: HITACHI/ OPTOELECTRONICS 54E D • 44^205 0 0 1 2 03 7 3,20 ■ H I T M HL7836G/MG GaAIAs LD Description T The HL7836G/MG are 0.78 (Jm band GaAIAs laser diodes with a double heterojunction structure. They are designed to be used with a unitary positive voltage power supply, and are appropriate as the light

Contextual Info: Ul 1341 A/AC/FG/M F/BF/DL HITACHI/COPTOELECTRONICS Description she j> InGaAsP LP , MM'JbSOS 0 0 1 5 1 2 4 453 IHIT4 The HL1341A/AC/FG/MF/BF/DL are 1.3 im InGaAsP distributed feedback (DFB) laser diodes with buried hetero structure. They are suitable as light sources in high-bit-rate long distance fiber optic com­

Contextual Info: blE D • MMTbEOS 0013002 ATT ■ H I T 4 2SJ244- Preliminary HITACHI/ OPTO ELECTRON ICS Silicon P Channel MOS FET (Dlll-L) Application High speed power switching Low voltage operation Features • Very low on—resistance

Contextual Info: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description 7 The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.

2SJ113

Contextual Info: blE D I MMT h ED S DGI STO S äST « H I T H 2SJ113 HITACHI/ OPTOELECTRONICS ~ SILICON P-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER -(2-* Com plem entary pair w ith 2 S K 3 9 9 • FEATURES • Low On-Resistance. • High Speed Switching.

HE8807SG

Abstract: HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6
Contextual Info: H IT A C H I/C O P T O E L E C T R O N IC S S l4 E D • G 012D 32 HL7832G/HG bMT « H GaAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play­

HE1301

Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8319E HL8319G Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L 8 3 1 9 E /G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are

HE8815VG

Abstract: HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M
Contextual Info: HITACHI/COPTOELECTRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L8 3 1 1 E /G G a A IA s L D Description The HL8311E/G are 0.8 Jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.

2SK1200

Contextual Info: • 2SK1200 44clbEGS 0013233 534 ■ H I T 4 HITACHI/COPTOELECTRONICS blE » S ILIC O N N -C H A N N E L M OS F E T HIGH SPEED POWER SWITCHING ■ FEATURES 1. Gate 2. Drain Flange) 3. Source • Low On-Resistance • • High Speed Switching Low Drive Current

DIODE T25 4 Jo

Abstract: 2SK556 2SK557 H909 Hitachi Scans-001
Contextual Info: blE D 44*11,505 0 0 1 3 m i G74 « H I T 4 2SK556,2SK557 „m C H I/C O P TO EU C TK O H I« SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • • • • • Low O n-R esistance. High S peed Switching. Low Drive Current. No Secondary Breakdown.

HL1321AC

Abstract: HL1321BF HL1321DL HL1321DM HLP5400 44-C5B2
Contextual Info: HL1321 AC/BF/DL/DM, HLP5400 Description InGaAsP LD The HL1321AC/BF/DL/DM and HLP5400 are 1.3 |am band InGaAsP laser diodes with a double het­ erostructure. They are suitable as light sources for optical fiber communication systems and various types of optical equipment.

H1331C-C

Abstract: h1331c h1333c H1331C-E H1333C-C LS022C-C H1332C-C h1331 H1337C-C LS007C-C
Contextual Info: HI TA CHI/ O P T O E L E C T R O N I C S blE T> m i^HRhEDS 2 00127 bfl 170 •HITM HITACHI High Reliability & W ide Tem perature Range HITACHI LIQUID CRYSTAL DISPLAY FOR EASUREMENT EQUPMENT Extremely Appropriate for Measurement Equipment, Digital Meter, Car Clock, etc.

HL7836MG

Abstract: HE8807SG HL7836G HL8312E Hitachi Scans-001
Contextual Info: HI TA CH I/ O P T O E L E C T R O NI CS 54E ]> • 44^205 0012037 120 « H I T 4 HL7836G/MG GaAIAs LD Description The HL7836G/MG are 0.78 (Jm band GaAIAs laser diodes with a double heterojunction structure. They are designed to be used with a unitary positive voltage power supply, and are appropriate as the light

K695

Abstract: 2SK695
Contextual Info: blE D 2SK695 • 4inbEQ5 0013133 3S3 « H i m HITACHI/ OPTOELECTRONICS SILICON N -CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • Low On-Resistance • High Speed Switching 1. Gate 2. Drain (Flange) 3. Source (Dimensions i • Low Drive Current

Contextual Info: HITACHI/ OPTOELECTRONICS S4E D • 4 4 ^ 2 0 3 D012140 HL1541A/AC/FG/BF/DL/DM Description bTh M H IT H InGaAsP LD The HL1541 A/AC/FG/BF/DL/DM are 1.55 |im band laser diodes. A b s o lu te M a x i m u m R a tin g s (T ç ; = 2 5 ° C ) F e a tu r e s • The HL1541A/AC are packaged in chip carrier

HL6711G

Contextual Info: HITACHI/ OPTOELECTRONICS 54E D • MMTbSQS □ Gll'Hfl ßfiE ■ H I T ‘4 AIGalnP LD H L 67 11 G Description The HL6711G is a 0.67 pm band AIGalnP gain-guided laser diode with a double heterostructure. It is suit­ able as a light source for barcode readers, levelers and various other types of optical equipment. Hermetic

Contextual Info: HL7836MG GaAIAs LD Description The HL7836MG is a 0.78 im band GaAIAs laser diode with a double heterostructure. It is designed to be used with a unitary positive voltage power supply, and is appropriate as a light source for various optical application devices, including laser beam printers and laser levellers.

Contextual Info: HE8404SG GaAIAs IRED Description The HE8404SG is a 820 nm band GaAIAs infrared light emitting diode with a double heterojunction struc­ ture. It is suitable as a light source for a wide range o f optical control and sensing equipment. Features Package Type

LM018

Contextual Info: HITACHI/ OPTOELECTRONICS blE D 44^b2G5 0 0 1 2 4 5 ^ 80 LM018XMBL 7 ^ 7 ^ 3 7 1 40 characters x 2 lines Controller LSI HD44780 built-in (See page 115). +5V single power supply 3 A 3 M ECH A N ICAL DATA (N om inal D im ensions) Module size . 182W x 35.5H x 10.5T (max) mm