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    Q012DE7 Search Results

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    Contextual Info: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description 7 The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.


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    HE8807SG

    Abstract: HE8815VG HL7831G HL7831HG HL8312E Hitachi Scans-001 HE8403
    Contextual Info: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.


    OCR Scan
    q012de7hl7831g/hghl7831hghe8815vg+9he8813vgtjspo100he8811he8812sghe8807sghl7831ghl8312ehitachi scans-001he8403 PDF