HE8403 Search Results

Contextual Info: HITACHI/tOPTOELECTRONICS S4E T> m MMTbEQS DG121b7 ÛMT • HE8403SG/ML/TR_ GaAIAs IRED The HE8403SG/ML/TR are 0.8 nm band infrared light emitting diodes for use as the light sources in opti­ cal fiber communications. They provide a high speed response due to their double heterojunction GaAIAs structure.

Contextual Info: HE8403SG-Infrared Emitting Diodes IRED a D escription H E 8 4 0 3 S G is a 0 .8 /um G a A lA s in fra re d e m it­ tin g d io d e w ith d o u b le h e te ro ju n c tio n s tru c tu r e , w h ic h p ro v id e s h ig h s p e e d re s p o n s e . H ig h c o u p lin g efficien cy c an b e re a liz e d u s in g a

Contextual Info: HE8403TR Infrared Emitting Diodes IRED Description H E 8403T R is a 0.8 /xm G aA lA s infrared e m it­ tin g diode with double hetero ju n ctio n stru ctu re, w hich pro v id es high speed response. T h e package w ith a receptacle is easily connected w ith F C -type co n nector; suitable as a light source

Contextual Info: HE8403R S1E » Infrared Emitting Diodes IRED • 4^205 OOllbñfl 1^0 ■ HITM HITACHI/(OPTOELECTRONICS) T-4I- Description H E 8403R is a 0.8 /xm G aA lA s infrared em itting diode with do u b le h eterojunction stru ctu re, which provides high speed response.

Contextual Info: HE8403ML-Infrared Emitting Diodes IRED Description H E 8 4 0 JM L is a 0.8 f i m G aA IA s infrared e m it­ ting d iode w ith d o u b le h eterojunction stru ctu re, w hich provides high speed response. Optical o u tp u t from the chip is directed to the

HE8403ML

Contextual Info: HE8403SG/ML GaAIAs IRED Description The HE8403SG/M L are 840 nm band GaAIAs infrared light emitting diodes with a double heterojunction structure. They are suitable as light sources for optical fiber communication systems. Features • High efficiency, high luminance

Contextual Info: HE8403R-Infrared Emitting Diodes IRED Description H E 8 4 0 3 R is a 0 .8 p m G a A IA s in fra re d e m ittin g d io d e w ith d o u b le h e te ro ju n c tio n s tr u c tu r e , w h ich p ro v id e s h ig h s p e e d re s p o n se . O ptical fib er c an b e c lo se to th e c h ip , a c h ie v in g

Contextual Info: HE8403SG/ML GaAIAs IRED Description The HE8403SG/ML are 840 nm band GaAIAs infrared light emitting diodes with a double heterojunction structure. They are suitable as light sources for optical fiber communication systems. Features • High efficiency, high luminance

HE8807SG

Abstract: HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6
Contextual Info: H IT A C H I/C O P T O E L E C T R O N IC S S l4 E D • G 012D 32 HL7832G/HG bMT « H GaAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play­

HE1301

Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8319E HL8319G Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L 8 3 1 9 E /G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are

HL7806

Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
Contextual Info: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G

HL7801

Abstract: HL7806 HE8807CL HL7801E HL1324MF HL83M HL7831 HL83H HE8812 hitachi he1301
Contextual Info: Family Introduction Family Introduction Laser Diodes LD feckages AC \ E HL671I G HG FG TR DM BF DL HL1321BF HL132IDL HL 1341 BF HLI341DL HL 1541 BF HL1541DL HL7801E HL7802 HL7802E HL7802G HL7806 HL7806G HL7831 HL7831G HL7832 HL7832G HL7836 HL7836G HL7838

HE8815VG

Abstract: HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M
Contextual Info: HITACHI/COPTOELECTRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L8 3 1 1 E /G G a A IA s L D Description The HL8311E/G are 0.8 Jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.

HL7806

Abstract: L8311 mb 428 ic data HLP30RGD E8811 ART106 HLP30RG HL7836
Contextual Info: §4. Fundamental Characteristics 4.1 LD Fundamental Characteristics 4.1.1 Light vs. Current Characteristics under CW Operation One of the fundamental parameters o f LDs is optical-output-power vs. forward-current light vs. current characteristic. Figure 4-1 shows a measuring setup for light vs. current characteristic under CW operation.

HE8811

Abstract: HE8403 HE8807SG HE8812SG HE8813VG HE8815VG HL7842MG HL8312E he8813 Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS S4E D • 4H1b2GS DDISDMT TMB HL7842MG (Preliminary)_ GaAiAs ld Description The HL7842MG is a 0.78 (im band GaAiAs laser diode with a double heterojunction structure. It is suit­ able as a light source for laser beam printers, laser levelers and various other types of optical equipment.

HE8813VG

Abstract: HE8403 HE8807SG HE8811 HE8815VG HL8312E HL8312G HE84-03 Hitachi Scans-001 HE8807
Contextual Info: HL8312E/G GaAIAs LD HITACHI/ OPTOELECTRONICS Description S4E T> I 4 4 ^2 0 5 G0120b7 « H i m -4 1 -os The HL8312E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment

HE8807SG

Abstract: HE8815VG HL7831G HL7831HG HL8312E Hitachi Scans-001 HE8403
Contextual Info: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.

11w cfl circuit

Abstract: HE8807SG HL1521A HL1521AC HL1521FG HL8312E LTH 1550 01 Hitachi Scans-001 44BA
Contextual Info: H I T A C H I / O P tOELECTRONICS 5 ME D • 44 Tbi2 D 5 G1 2 1 3 5 23 ^ ■ HITM InGaAsP LD H L 1 5 2 1 A /A C /F G 'T 'H t-c Description The HL1521A/AC/FG are 1.55 (im band laser diodes. Features • • Absolute Maximum Ratings (Tc = 25°C) Long wavelength output: Xp = 1530 - 1570 nm

hitachi he1301

Abstract: HL7838G HL8312E laser GaAIAs de 5 mw 760 800 HE8807SG HE8813VG HE8815VG HL7838 Hitachi Scans-001 HE8403
Contextual Info: HITACHI/ OPTOELECTRONICS S^E D • MM'JbSGS D0120142 S^fl « H I T 4 HL7838G GaAlAs LD Description The HL7838G is a 0.78 pm band GaAlAs laser diode with a double heterojunction structure and is appro­ priate as the light source for various optical application devices, including laser beam printers and laser

HL7806

Abstract: HE8807CL HL7812G HE8811 HL7812 he130
Contextual Info: Package Variations Laser Diodes Packages Open-air type rar Features Applicable Products ’ For experimental use •For module assembly HLP5400, HL1322A, HL1341A, HL1362A, HL1521A, HL1541A, HL1551A ■For module assembly • Chip carrier stem HL1321AC, HL1322AC, HL1341AC,

laser diode 780 nm

Abstract: HE8403ML
Contextual Info: Part Numbers 1. Hitachi optoelectronic device part numbers indicate the following: !-!□□□□□[]□ Package type Chip structure, characteristics Emitting wavelength Ex.; 780 nm band: 78 I 1300 nm band: 13 Product type ' Laser diode: L Infreared emitting diode: E

HL8314E

Abstract: XP 215 hitachi HE130 HE8815VG hitachi he1301 HL8314G HE8807SG HL8312E Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • MMTbSDS 0012071 3TT ■ H L 8 3 1 4 E /G _GaAIAs LD Description *4 (~ C & The HL8314E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment

Thermistor bth 471

Abstract: d 1548 10G 1550 optical laser in butterfly HL1541DL HL1541A HL1541BF HL1541DM HL1541FG 10 gb laser diode AP-93
Contextual Info: HITACHI/ OPTOELECTRONICS S4E D • 4 4 ^ 2 0 3 D012140 HL1541A/AC/FG/BF/DL/DM bTh M H IT H InGaAsP LD Description The HL1541 A/AC/FG/BF/DL/DM are 1.55 |im band laser diodes. A b s o lu te M a x im u m R a tin g s (T ç ; = 2 5 ° C ) F e a tu re s • The HL1541A/AC are packaged in chip carrier

hitachi sr 302

Abstract: HL1561BF te 1819 HL1561A HL1561AC 10 gb laser diode DD121S3 Hitachi Scans-001
Contextual Info: 54 E J> HITACHI/ OPTOELECTRONICS • HHTbSDS DD121S3 254 « H I T 4 H L 1 5 6 1 A /A C /B F InGaAsP LD Description The HL1561 A/AC/BF are 1.55 (am band InGaAsP X/4 phase-shifted distributed-feedback (DFB) laser diodes with a buried heterostructure. Fiber Specifications (HL1561BF only)