HE8403ML Search Results

Contextual Info: HE8403ML-Infrared Emitting Diodes IRED Description H E 8 4 0 JM L is a 0.8 f i m G aA IA s infrared e m it­ ting d iode w ith d o u b le h eterojunction stru ctu re, w hich provides high speed response. Optical o u tp u t from the chip is directed to the

Contextual Info: HITACHI/tOPTOELECTRONICS S4E T> m MMTbEQS DG121b7 ÛMT • HE8403SG/ML/TR_ GaAIAs IRED The HE8403SG/ML/TR are 0.8 nm band infrared light emitting diodes for use as the light sources in opti­ cal fiber communications. They provide a high speed response due to their double heterojunction GaAIAs structure.

HL7806

Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
Contextual Info: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G

HL7801

Abstract: HL7806 HE8807CL HL7801E HL1324MF HL83M HL7831 HL83H HE8812 hitachi he1301
Contextual Info: Family Introduction Family Introduction Laser Diodes LD feckages AC \ E HL671I G HG FG TR DM BF DL HL1321BF HL132IDL HL 1341 BF HLI341DL HL 1541 BF HL1541DL HL7801E HL7802 HL7802E HL7802G HL7806 HL7806G HL7831 HL7831G HL7832 HL7832G HL7836 HL7836G HL7838

HL7806

Abstract: HE8807CL HL7812G HE8811 HL7812 he130
Contextual Info: Package Variations Laser Diodes Packages Open-air type rar Features Applicable Products ’ For experimental use •For module assembly HLP5400, HL1322A, HL1341A, HL1362A, HL1521A, HL1541A, HL1551A ■For module assembly • Chip carrier stem HL1321AC, HL1322AC, HL1341AC,

HE8403ML

Contextual Info: HE8403SG/ML GaAIAs IRED Description The HE8403SG/M L are 840 nm band GaAIAs infrared light emitting diodes with a double heterojunction structure. They are suitable as light sources for optical fiber communication systems. Features • High efficiency, high luminance

laser diode 780 nm

Abstract: HE8403ML
Contextual Info: Part Numbers 1. Hitachi optoelectronic device part numbers indicate the following: !-!□□□□□[]□ Package type Chip structure, characteristics Emitting wavelength Ex.; 780 nm band: 78 I 1300 nm band: 13 Product type ' Laser diode: L Infreared emitting diode: E

Contextual Info: HE8403SG/ML GaAIAs IRED Description The HE8403SG/ML are 840 nm band GaAIAs infrared light emitting diodes with a double heterojunction structure. They are suitable as light sources for optical fiber communication systems. Features • High efficiency, high luminance