HE130 Search Results

hitachi he1301

Abstract: 0660H HE1301
Contextual Info: HE1301 TR-Infrared Emitting Diodes IRED Description H E 1301T R is a 1.3 /im In G aA sP infrared e m it­ ting d iode with do u b le hetero ju n ctio n stru ctu re, w hich provides high speed response. T h e package with a receptacle is easily connected

HE1302

Contextual Info: 1ÛE HE1302ML D • MMU205 0010=102 3 InGaAsP IRED HITACHI/ OPTOELECTRONICS Description r-v-iá HE1302M L is a high-power 1.3 ftm InGaAsP infrared emitting diode with double heterojunction structure, which provides high speed response. Optical output from the chip is directed to the

electronic devices

Contextual Info: N PN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HE13007 █ ＨＩＧＨ ＶＯＬＴＡＧＥ ＳＷＩＴＣＨ ＭＯＤＥ ＡＰＰＬＩＣＡＴＩＯＮ █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220AB

HE13003

Abstract: 15A H3
Contextual Info: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HE13003 █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220

HE13001

Abstract: 400V voltage regulator he130
Contextual Info: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HE13001 █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92

HE13009

Abstract: he130
Contextual Info: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HE13009 █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220

HE1301R

Contextual Info: HE1301R-Infrared Emitting Diodes IRED Description II H E 1301R is a 1.3 jum In G aA sP infrared em it­ ting d io d e w ith d o u b le h etero ju n ctio n stru ctu re, w hich provides high speed response. It is su itab le as a light source in high-speed

Contextual Info: 5HE D HITACHI / OPTOELECTRONICS HHIbSD-S DG121ÔS flbM « H I T M • H E 1 301 S U /M L/1 K InGaAsP IRED T The HE1301SG/M L/TR are 1.3 (J.m band infrared light emitting diodes for use as the light sources in opti­ cal fiber communications. They provide a high speed response due to their double heterojunction InGaAsP structure.

he130

Contextual Info: HE1303SG/ML InGaAsP IRED Description T he H E 1303SG /M L are 1.3 nm band InG aA sP infrared light em itting diodes w ith a double heterojunction structure. T hey are suitable as light sources for optical fiber com m unication system s. Features Package Type

HE13002

Contextual Info: NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HE13002 █ APPLICATIONS High Voltage switching And Speed Switching █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃

Contextual Info: NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HE13005 █ ＨＩＧＨ ＶＯＬＴＡＧＥ ＳＷＩＴＣＨ ＭＯＤＥ ＡＰＰＬＩＣＩＣＡＴＩＯＮ High Speed Switching Suitable for Switching Regulator and Montor Control

HE13009

Contextual Info: NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HE13009 █ ＨＩＧＨ ＶＯＬＴＡＧＥ ＳＷＩＴＣＨ ＭＯＤＥ ＡＰＰＬＩＣＩＣＡＴＩＯＮＳ High Speed Switching Suitable for Switching Regulator and Montor Control

HE1301ML

Contextual Info: HE1301ML Infrared Emitting Diodes IRED Description H E 1301M L is a 1.3 /¿m In G aA sP infrared e m it­ ting d io d e w ith do u b le h etero ju n ctio n stru c tu re , w hich pro v id es high speed response. Optica) o u tp u t from the chip is directed to the

Contextual Info: HE1303SG/ML InGaAsP IRED Description The HE1303SG/ML are 1.3 |im band InGaAsP infrared light emitting diodes with a double heterojunction structure. They are suitable as light sources for optical fiber communication systems. Features Package Type • HE1303SG: SG

tic 1260

Abstract: he1301sg
Contextual Info: HE1301SG-Infrared Emitting Diodes IRED Description H E 1 3 0 1 S G is a 1.3 ¿ tm In G a A s P in fr a r e d e m it­ tin g d io d e w ith d o u b le h e te ro ju n c tio n s tr u c tu r e , w h ic h p ro v id e s h ig h s p e e d re s p o n se . H ig h c o u p lin g efficiency can b e re a liz e d u s in g a

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Contextual Info: This browser does not have Java enabled. TE Connectivity My Cart | My Part Lists | Sign In/Register Have a Question? What can we help you find? Chat with a Product Information Specialist Products Industries Resources About TE

Contextual Info: This browser does not have Java enabled. TE Connectivity My Cart | My Part Lists | Sign In/Register Have a Question? What can we help you find? Chat with a Product Information Specialist Products Industries Resources About TE

Contextual Info: This browser does not have Java enabled. TE Connectivity My Cart | My Part Lists | Sign In/Register Have a Question? What can we help you find? Chat with a Product Information Specialist Products Industries Resources About TE

HE1402

Abstract: connectors HE13 he14 he14 Tyco HE1302 HE140 HE13-HE14 HE13 HE-14 C93401
Contextual Info: Product specification MODULAR HEADERS AND PLUGS ACCORDING TO IEC 60603-8 SERIES HE13 HE14 SERIES 108-15053 04 December 07 Rev. H 1. SCOPE 1.1. Content This document covers the performances, tests, and quality requirements of a modular family of headers (0,635mmx0,635mm .0025x.0025 square pins) on a 2,54mm (.100) grid and plugs, designed for wire to board

transistor 13002

Abstract: KSE13002 13002 to-126 TRANSISTOR KSE13002HE13002 transistor13002 13002 TRANSISTOR 13002 npn D142AG-00
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13002 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：D142AG-00 芯片厚度：240±20µm 管芯尺寸：1420x1420µm 2 焊位尺寸：B 极 300×245µm 2，E 极 350×245µm 2

transistor 13005

Abstract: KSE13005 D283AG-00 transistor E 13005
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13005 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：D283AG-00 芯片厚度：240±20µm 管芯尺寸：2830x2830µm 2 焊位尺寸：B 极 1200×420µm 2，E 极 1140×540µm 2

HE8807SG

Abstract: HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6
Contextual Info: H IT A C H I/C O P T O E L E C T R O N IC S S l4 E D • G 012D 32 HL7832G/HG bMT « H GaAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play­

HE1301

Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8319E HL8319G Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L 8 3 1 9 E /G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are