HE8807 Search Results

Contextual Info: HE8807SG/FL ODE-208-050A Z Rev.1 Feb. 01, 2008 GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • Package Type • HE8807SG: SG1

HE8807CL

Abstract: HE8807FL
Contextual Info: HE8807SG/CL/FL GaAIAs Infrared Emitting Diodes Description The H E 8807S G /C L /F L are sin gle heterojunction structure G aA IA s light em itting d iod es with a w avelen gth o f 880 nm. Features • • • • H igh output, high efficien cy Narrow spectral width

HE8807CL

Contextual Info: HE8807CL - Under Development Infrared Emitting Diodes IRED D escription H E 8 8 0 7 C L is a 0 .8 /¿m G a A I A s in fra re d e m it­ tin g d io d e w ith s in g le h e te ro ju n c tio n s tru c tu re . C o llim a te d lig h t b e a m c an b e o b ta in e d b y th e

HE8807FL

Abstract: HE8807SG
Contextual Info: HE8807SG/FL GaAlAs Infrared Emitting Diodes ODE-208-998A Z Rev.1 Jan. 2003 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • High output, high efficiency • Narrow spectral width

Semiconductor Nuclear Radiation Detector

Abstract: HE8807FL HE8807SG nuclear radiation detector Hitachi DSA0047
Contextual Info: HE8807SG/FL GaAlAs Infrared Emitting Diodes ADE-208-998 Z 1st Edition Dec. 2000 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency

Contextual Info: HE8807SG/SL/CL/FL GaAIAs IRED Description The H E8807SG /SL/CL/FL are 880 nm band GaAIAs infrared light emitting diodes with a single hetero­ junction structure. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity H E8807SL/CL/FL

HE8807FL

Abstract: HE8807SG Semiconductor Nuclear Radiation Detector
Contextual Info: HE8807SG/FL ODE-208-050 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • Package Type • HE8807SG: SG1

Semiconductor Nuclear Radiation Detector

Abstract: Hitachi DSA0087 HE8807FL HE8807SG 208998
Contextual Info: HE8807SG/FL GaAlAs Infrared Emitting Diodes ADE-208-998 Z 1st Edition Dec. 2000 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • High output, high efficiency • Narrow spectral width

HE8807SG

Abstract: HE8807FL
Contextual Info: HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807FL

Contextual Info: HE8807SG/FL GaAlAs Infrared Emitting Diodes ODE-208-998B Z Rev.2 Mar. 2005 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency

radiation

Contextual Info: HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807FL

HE8807CL

Abstract: XP20W
Contextual Info: HE8807SG/SL/CL/FL GaAIAs IRED Description The HE8807SG/SL/CL/FL are 880 nm band GaAIAs infrared light emitting diodes with a single hetero­ junction structure. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807SL/CL/FL

Hitachi DSA002726

Contextual Info: HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807FL

Contextual Info: HE8807SL- a Infrared Emitting Diodes IRED Description H E 8807S L is a 0.8 n m G aA lA s infrared e m it­ ting diode with single heterojunction structure. R adiant directionality is narrow and radiant in­ tensity is high; suitable as a light source in encoders

opnext l

Contextual Info: HE8807SG/FL ODE2061-00 M Rev.0 Aug. 01, 2008 GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • Package Type • HE8807SG: SG1

HE8807SG

Abstract: HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6
Contextual Info: H IT A C H I/C O P T O E L E C T R O N IC S S l4 E D • G 012D 32 HL7832G/HG bMT « H GaAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play­

HE1301

Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8319E HL8319G Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L 8 3 1 9 E /G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

opnext

Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
Contextual Info: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring

diode

Contextual Info: Part Numbers-Hitachi optoelectronic device part numbers indicate the following: Package type Chip structure, characteristics Emitting wavelength f Ex.; 780 nm band: 78 I 1300 nm band: 13 Product type Laser diode: L Infreared

HL7806

Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
Contextual Info: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G

Contextual Info: Section 6 Reliability T h is section c o v e rs p o in ts w h ich p articularly affect cu rrent, etc. to drift, an d u ltim a tely lead to the en d th e o p e ra tin g life lig h t e m ittin g d e v ic e s , an d of p ro v id e s so m e e x a m p l e s w h ich sh o u ld be studied

L6312G

Abstract: 8325G HL6314M L6313
Contextual Info: Contents Product Lineup . Part Num bers.

HL7801

Abstract: HL7806 HE8807CL HL7801E HL1324MF HL83M HL7831 HL83H HE8812 hitachi he1301
Contextual Info: Family Introduction Family Introduction Laser Diodes LD feckages AC \ E HL671I G HG FG TR DM BF DL HL1321BF HL132IDL HL 1341 BF HLI341DL HL 1541 BF HL1541DL HL7801E HL7802 HL7802E HL7802G HL7806 HL7806G HL7831 HL7831G HL7832 HL7832G HL7836 HL7836G HL7838