HE8807FL Search Results

HE8807SG

Abstract: HE8807FL
Contextual Info: HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807FL

radiation

Contextual Info: HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807FL

Hitachi DSA002726

Contextual Info: HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807FL

Contextual Info: HE8807SG/FL ODE-208-050A Z Rev.1 Feb. 01, 2008 GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • Package Type • HE8807SG: SG1

opnext

Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
Contextual Info: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring

diode

Contextual Info: Part Numbers-Hitachi optoelectronic device part numbers indicate the following: Package type Chip structure, characteristics Emitting wavelength f Ex.; 780 nm band: 78 I 1300 nm band: 13 Product type Laser diode: L Infreared

HL7806

Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
Contextual Info: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G

HE8807CL

Abstract: HE8807FL
Contextual Info: HE8807SG/CL/FL GaAIAs Infrared Emitting Diodes Description The H E 8807S G /C L /F L are sin gle heterojunction structure G aA IA s light em itting d iod es with a w avelen gth o f 880 nm. Features • • • • H igh output, high efficien cy Narrow spectral width

hitachi DC9300

Abstract: 1550nm Laser Diode with butterfly pin package DC9300 1550nm Laser Diode butterfly hitachi HL7851G DR9301 780nm 10mW laser diodes LB7671 RCV5932 laser DFB 1550nm 10mW
Contextual Info: C 1998 Dirk Plha HITACHI OPTOELECTRONIC DEVICES HITACHI OPTODEVICES • Industrial and Information Laser Diodes For laser levellers, alignment systems, bar code readers, distance measurement and optical storage, Hitachi offers a complete line-up of 635nm to 830nm laser diodes

HE8807FL

Abstract: HE8807SG
Contextual Info: HE8807SG/FL GaAlAs Infrared Emitting Diodes ODE-208-998A Z Rev.1 Jan. 2003 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • High output, high efficiency • Narrow spectral width

LD5033

Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
Contextual Info: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet

Semiconductor Nuclear Radiation Detector

Abstract: HE8807FL HE8807SG nuclear radiation detector Hitachi DSA0047
Contextual Info: HE8807SG/FL GaAlAs Infrared Emitting Diodes ADE-208-998 Z 1st Edition Dec. 2000 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency

Contextual Info: HE8807SG/SL/CL/FL GaAIAs IRED Description The H E8807SG /SL/CL/FL are 880 nm band GaAIAs infrared light emitting diodes with a single hetero­ junction structure. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity H E8807SL/CL/FL

HE8807FL

Abstract: HE8807SG Semiconductor Nuclear Radiation Detector
Contextual Info: HE8807SG/FL ODE-208-050 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • Package Type • HE8807SG: SG1

opnext

Abstract: laser diode DVD 100mw opnext laser diode 660nm 100mw HL6348MG HL1357CP HL1511AF HL1513AF HL6314MG 1310nm fp 10g
Contextual Info: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring

laser diode 940 nM 200mW

Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
Contextual Info: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and

HL7806

Abstract: HE8807CL HL7812G HE8811 HL7812 he130
Contextual Info: Package Variations Laser Diodes Packages Open-air type rar Features Applicable Products ’ For experimental use •For module assembly HLP5400, HL1322A, HL1341A, HL1362A, HL1521A, HL1541A, HL1551A ■For module assembly • Chip carrier stem HL1321AC, HL1322AC, HL1341AC,

Contextual Info: HE8807SG/FL GaAlAs Infrared Emitting Diodes ODE-208-998B Z Rev.2 Mar. 2005 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency

HE8807CL

Abstract: XP20W
Contextual Info: HE8807SG/SL/CL/FL GaAIAs IRED Description The HE8807SG/SL/CL/FL are 880 nm band GaAIAs infrared light emitting diodes with a single hetero­ junction structure. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807SL/CL/FL

HE8807CL

Abstract: HL7851
Contextual Info: Product Lineup-Visible and Infrared Laser Diodes t 10 : Under development Product Lineup Visible and Infrared Laser Diodes cont 1— Ì Wavelength Optical Output 785 nm 5 mW internal circuit L D ^ PD L°ypD Main application Part No. HL7836MG Laser beam

dfb activation energy

Abstract: "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G
Contextual Info: Optodevice Data Book ODE-408-001I Rev.9 Mar. 2003 Opnext Japan, Inc. Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a

RCV5932

Abstract: DR9301 LB7671 laser DFB 1550nm 10mW single hitachi DC9300 Photodiode, 1550nm, butterfly package laser DFB 1550nm 10mW DC9300 Arrayed Waveguide Grating 1550nm Laser Diode with butterfly pin package
Contextual Info: C 1998 Dirk Plha HITACHI OPTOELECTRONIC DEVICES HITACHI OPTODEVICES • Industrial and Information Laser Diodes For laser levellers, alignment systems, bar code readers, distance measurement and optical storage DVD-RAM , Hitachi offers a complete line-up of 635nm to 830nm

OPR 12 PHOTOCELL

Abstract: photocell opr 12 HL7836MG HE8807CL cake power hitachi HL7851G HL7851 10G APD chip "Hitachi, Ltd., 1997" Hitachi laser diodes IR Pulsed
Contextual Info: Hitachi Optodevice Data Book ADE-408-001E Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In

2544S

Abstract: HE8807CL HL785
Contextual Info: Package Variations Laser diodes Packages Open-air type ^ Features ^ Applicable Products * For experimental use • For module assembly HL1362A, HL1551A • For module assembly HL1362AC, HL1551AC • For module assembly HL1553 • With built-in monitor-photodiode