2SJ315 Search Results

Contextual Info: TOSHIBA 2SJ315 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-7r-MOSlV 2SJ315 DC-DC CONVERTER INDUSTRIAL APPLICATIONS U n it in mm 4-Volt G ate Drive Low D rain-Souree ON R esistance : R d S(ON) —0 .2 5 0 (Typ.) H igh F orw ard T ransfer A dm ittance : |Yfs| = 3 .0 S (Typ.)

Contextual Info: 2SJ315 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSIV 2SJ315 DC−DC Converter Unit: mm FEATURES z 4− Volt gate drive z Low drain−source ON resistance : RDS (ON) = 0.25 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.0 S (typ.)

2SJ315

Abstract: 2SJ31
Contextual Info: 2SJ315 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSIV 2SJ315 DC−DC Converter Unit: mm FEATURES 4− Volt gate drive Low drain−source ON resistance : RDS (ON) = 0.25 Ω (typ.) High forward transfer admittance : |Yfs| = 3.0 S (typ.)

Contextual Info: TOSHIBA 2SJ315 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt- M O S F DC-DC CONVERTER INDUSTRIAL APPLICATIONS 4-Volt Gate Drive Low Drain-Source ON Resistance : Rd S(ON) —0.25Î1 (Typ.) High Forward Transfer Admittance : |Yfs| = 3 .OS (Typ.)

J315

Abstract: 2SJ315
Contextual Info: 2SJ315 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSIV 2SJ315 DC−DC Converter Unit: mm FEATURES 4− Volt gate drive Low drain−source ON resistance : RDS (ON) = 0.25 Ω (typ.) High forward transfer admittance : |Yfs| = 3.0 S (typ.)

2SJ315

Contextual Info: 2SJ315 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSIV 2SJ315 DC−DC Converter Unit: mm FEATURES l 4− Volt gate drive l Low drain−source ON resistance : RDS (ON) = 0.25 Ω (typ.) l High forward transfer admittance : |Yfs| = 3.0 S (typ.)

2SJ315

Contextual Info: 2SJ315 T O S H IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-^-MOSlV 2SJ315 DC-DC CONVERTER INDUSTRIAL APPLICATIONS Unit in mm 4-Volt Gate Drive Low Drain-Source ON Resistance : Rd S(ON)“ 0.250 (Typ.) High Forward Transfer Admittance : |Yfs| = 3.0S (Typ.)

2sk1603

Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
Contextual Info: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378

2SJ315

Contextual Info: 2SJ315 TOSHIBA 2SJ315 TOSHIBA FIELD EFFECT TRANSISTOR DC-DC CONVERTER SILICON P CHANNEL MOS TYPE L2-^-MOSlV INDUSTRIAL APPLICATIONS Unit in mm 4-Volt Gate Drive Low Drain-Source ON Resistance : RßS (ON) = 0.25 ü, (Typ.) High Forward Transfer Admittance : |Yfs| = 3.0 S (Typ.)

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

2SK3878 equivalent

Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)

k 2057

Abstract: K1766 K2236 K1767 K1406 K1574 K1879 K 2149 K 2237 2SK1407
Contextual Info: P o w e r M O S F E T jr-M O S I I I '5 R ds (O N ) M aximum Rating Application Batest M O T O R Drive UPS A C 1 15V Input Switching Power Supply Type No. O * O • O O O O O O O O O O O O O O 2S K 2146 2S K 2230 2S K 2235 2S K 1766 2S K 1406 2SK1S54 2SK1805

2SK3566 equivalent

Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

K2057

Abstract: toshiba k2057 tpc8107 equivalent 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK2610 equivalent 2SK3662
Contextual Info: 2003-5 BCE0017A PRODUCT GUIDE Power MOSFETs 2003 http://www.semicon.toshiba.co.jp/eng 2 C 1 2 3 4 O N T E N Features and Structure New Power MOSFET Products Selection Guide Power MOSFET Characteristics 1. SOP-8 Series 2. VS-6 / 8 Series, PS-8 Series 3. TFP Thin Flat Package Series

2SK2056

Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
Contextual Info: TOSHIBA TOSHIBA POWER MOSFETs 1Q, 1999 Alphanumerically Toshiba Power MOSFET List Alphanumerically Part VDSS RDS ON Number (V) (Ω) ID (A) Package Generation Status 2SJ147 -60 0.2 -12 TO-220IS π -MOSII Non-Promotion 2SJ183 -60 0.35 -5 POWER MOLD L - π -MOSIII

2sk4110

Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Contextual Info: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3

k2038

Abstract: K1357 K 1357 k1363 K2077 K1349 K1356 K1574 K2039 K2222
Contextual Info: Power MOS FET Lineup Vdss = 60 ~ 200 V Voss (V) Id (A) S eriea lineup ir-M OS II ff-MOS L2-s*M OS III 0.8 1.0 2.0 T 2 S K 1 112(0.16) ▼ 2SJ183(0 35) 5 .0 •2S K 6 72(0.2) ♦ 2 S J 147 (0.20) O 2SJ224(0.2) ♦ 2 S K 5 3 2 (0.085) 10 12 O2SJ238(0.85) >2SK1717(0.35)

2SK2056

Abstract: 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
Contextual Info: [ 9 ] Superseded and Discontinued Product List [ 9 ] Superseded and Discontinued Product List [ 9 ] Superseded and Discontinued Product List 1. Superseded Products The following listed products are no longer being promoted in Toshiba’s marketing. Please refer to Recommended Replacement Part Number.

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

2SK1603

Abstract: 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855
Contextual Info: Small-Signal MOSFETs Toshiba presents a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to the S-MOS product line. The devices which comprise this family exhibit ultra-low ON-resistance (RDS(ON) and

2sK2750 equivalent

Abstract: equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
Contextual Info: 2004-3 PRODUCT GUIDE Power MOSFETs semiconductor 2004 http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structure .4 3. TFP Series .18 - 21

2sk3625

Abstract: 2SK3566 equivalent 2SK3868 2SK3878 2sj618 NTPCA8008-H 2sk 2sj complementary mosfet TPC8107 2SK2611 MOSFET TOSHIBA 2SK2917
Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)