|
10Q
|
|
Beijing Yunike Electronic Components
|
Electromechanical Filter 10.7 MHz BPF, 2 dB IL, 0.5 dB Inband ripple |
Original |
PDF
|
21.81KB |
1 |
|
10Q3
|
|
Unknown
|
Shortform Semicon, Diode, and SCR Datasheets |
Short Form |
PDF
|
136.56KB |
1 |
|
10Q4
|
|
Unknown
|
Catalog Scans - Shortform Datasheet |
Scan |
PDF
|
112.88KB |
1 |
|
10-Q-65
|
|
Storm Products
|
TERMINATOR |
Original |
PDF
|
57.27KB |
2 |
|
10QB
|
|
Beijing Yunike Electronic Components
|
Electromechanical Filter 10.7 MHz BPF, 2.5 dB IL, 1 dB Inband ripple |
Original |
PDF
|
21.81KB |
1 |
EC10QS03
|
|
SUNMATE electronic Co., LTD
|
Surface mount Schottky barrier diode with 1.0 A average rectified current, 30 to 100 V peak repetitive reverse voltage, low forward voltage drop of 0.50 to 0.85 V at 1.0 A, and SMA/DO-214AC package. |
Original |
PDF
|
|
|
|
SA10QA04
|
|
SUNMATE electronic Co., LTD
|
Surface mount Schottky barrier diode with 20 to 40V peak repetitive reverse voltage, 1.0A average rectified output current, low forward voltage drop, and typical junction capacitance of 110pF at 1MHz. |
Original |
PDF
|
|
|
|
EC10QS04
|
|
SUNMATE electronic Co., LTD
|
Surface mount Schottky barrier diode EC10QS03-EC10QS10 with 1.0 A average rectified current, 30-100 V peak repetitive reverse voltage, low forward voltage drop of 0.50 to 0.85 V at 1.0 A, and non-repetitive surge current up to 30 A. |
Original |
PDF
|
|
|
|
SA10QA02
|
|
SUNMATE electronic Co., LTD
|
Surface mount Schottky barrier diode with 20 to 40V peak repetitive reverse voltage, 1.0A average rectified output current, low forward voltage drop, and typical junction capacitance of 110pF at 1MHz. |
Original |
PDF
|
|
|
|
HIRP3010Q20-B30
|
|
CT Micro International Corporation
|
SMD type 850nm infrared emitter with peak wavelength of 850nm, radiant intensity of 1.0 to 7.0 mW/sr, viewing angle ±65 degrees, and forward voltage of 1.30 to 1.56V, designed for infrared sensing and light barrier applications. |
Original |
PDF
|
|
|
|
RM11110Q10GA
|
|
JWD
|
RM1 series RJ45 connectors support 10/100, 1G, 2.5/5G, and 10G Ethernet, feature RoHS compliance, 260 °C peak wave solder rating, integrated magnetics, LED options, and meet IEEE 802.3 isolation standards with durability rated at 750 insertions. |
Original |
PDF
|
|
|
|
RM21110Q10GA
|
|
JWD
|
RM2 series RJ45 connectors support 10/100/1000/2.5/5G Ethernet, feature RoHS compliance, 260°C peak wave solder rating, 1500Vrms isolation, and options for LED indicators and EMI shielding. |
Original |
PDF
|
|
|
|
EC10QS08
|
|
SUNMATE electronic Co., LTD
|
Surface mount Schottky barrier diode in SMA/DO-214AC package, 1.0 A average rectified current, 30 to 100 V peak repetitive reverse voltage, low forward voltage drop of 0.50 to 0.85 V at 1.0 A, operating junction temperature from -65 to +125 °C. |
Original |
PDF
|
|
|
|
AW13510QNR
|
|
Shanghai Awinic Technology
|
0.1-3.8GHz SP10T Diversity Switch with MIPI |
Original |
PDF
|
|
|
|
|
|
EC10QS03L
|
|
SUNMATE electronic Co., LTD
|
Surface mount Schottky barrier diode EC10QS03L with 30V repetitive peak reverse voltage, 1.0A average rectified forward current, low forward voltage drop, and operating junction temperature from -40 to +150°C. |
Original |
PDF
|
|
|
|
SL65N10Q
|
|
SLKOR
|
|
Original |
PDF
|
|
|
|
EC10QS10
|
|
SUNMATE electronic Co., LTD
|
Surface mount Schottky barrier diode EC10QS series with 1.0A average rectified current, 30-100V DC blocking voltage, low forward voltage drop of 0.50 to 0.85V at 1.0A, and operating temperature range from -65 to +125°C. |
Original |
PDF
|
|
|
|
EC10QS06
|
|
SUNMATE electronic Co., LTD
|
Surface mount Schottky barrier diode in SMA/DO-214AC package, 1.0A average rectified current, 30V to 100V peak repetitive reverse voltage, 0.50V to 0.85V forward voltage at 1.0A, operating junction temperature from -65°C to +125°C. |
Original |
PDF
|
|
|
|
SA10QA03
|
|
SUNMATE electronic Co., LTD
|
Surface mount Schottky barrier diode with 20 to 40V peak repetitive reverse voltage, 1.0A average rectified output current, low forward voltage drop, and fast reverse recovery time, housed in SOD-123FL package. |
Original |
PDF
|
|
|
|
SL60N10Q
|
|
SLKOR
|
N-Channel Power MOSFET, VDS 100V, ID 60A, RDS(ON) < 11.5mΩ at VGS=10V, < 15mΩ at VGS=4.5V, DFN5x6 package. |
Original |
PDF
|
|
|
EC10QS03
