2SD1842 Search Results

3261a

Abstract: 2SB1232 2SD1842 B1232
Contextual Info: O rdering num ber: EN 3261A 2SB1232/2SD1842 N0.3261A 2SB1232: PNP Epitaxial Planar Silicon Transistor 2SD1842: NPN Triple Diffused Planar Silicon Transistor 100V/40A Switching Applications F e a tu re s • Large current capacity and wide ASO. •Low saturation voltage.

2SB123

Abstract: 2SB1232 2SD1842
Contextual Info: Ordering number:EN3261A 2SB1232 : PNP Epitaxial Planar Silicon Transistor 2SD1842 : NPN Triple Diffused Planar Silicon Transistor 2SB1232/2SD1842 100V/40A Switching Applications Applications Package Dimensions • Motor drivers, relay drivers, converters, and other

2SD1842

Abstract: 2SB1232 ITR09408 ITR09409 ITR09410
Contextual Info: Ordering number:ENN3261A 2SB1232 : PNP Epitaxial Planar Silicon Transistor 2SD1842 : NPN Triple Diffused Planar Silicon Transistor 2SB1232/2SD1842 100V/40A Switching Applications Applications Package Dimensions • Motor drivers, relay drivers, converters, and other

8B123

Abstract: 2SB1232 2SD1842 1SB12
Contextual Info: |~Ordering number: EN 3261A 2SB1232/2SD1842 2SB1232 : P N P Epitaxial Planar Silicon Transistor 2SD1842 : N P N Triple Diffused Planar Silicon Transistor 100V/40A Switching Applications Featu res •Large current capacity and wide ASO. •Low saturation voltage.

Contextual Info: Continued from previous page Electrical characteristics T a = 25 t Absolute m uknum ratings hreevcEic VC Blnt) nux 0 1C • IB Type No. type AppRcatloas VCBO (V ) VCEO M 1C (A ) PC (W ) (8 > VCE(ul) max GnV) 1C (A ) IB (m A) hFE VCE (V ) frevcE-ic 1C (A )

2SB1232

Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
Contextual Info: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004

2SD1812

Abstract: 2SD1818 2SD1832 GV 269 2SD1816 2SD1817 2SD1819A 2SD1820 2SD1820A 2SD1821
Contextual Info: - 268 - mXËfè a g m îa=25°C, *EPfàTc=25'C • v-Bu Vc e o (V) (V) . m Ivvi/w Pc Pc* ICBO (A) (W) (W) (UA) O —A PA 160 160 1.5 0.9 2SD1S15 = m pstr 120 100 3 1 20 PSW 120 100 4 1 H # PD 80 60 3 1 10 2SD1817 W 1!È (V) (Ta=25cC) (V) [*EP(átyp{¡f]

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SB1205

Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf

2SD1213

Abstract: e1aj 2SB1511 2SB827 2SB828 2SB829 2SB904 2SD1063 2SD1064 2SD1065
Contextual Info: sa H y o Low-Saturation Voltage Series T0-3PB,ML Package A p p l F e a t u r e s * Low V C E( sa t ) . ♦ H i g h l y r e s i s t a n t to breakdown be c a use o f wide ASO. ♦ F a s t s w i t c h i n g speed. i c a t i o n s * R elay d r iv e r s . ♦ H ig h -sp e e d i n v e r t e r s .

SB1232

Abstract: SD1238 2SD1237 10102D b1271
Contextual Info: sa U y o L o w S a t u r a t ion Voltage Ser ies T0-220, MF, ML Package A p p l i c a t i o n s ♦ R e l a y drivers. » H i g h - s p e e d inverters. »Converters. * High-current F e a t u r e s * Low VCE(sat). * Highly resistant to breakdown because of wide ASO. * F a s t