2SD1816 Search Results

D1816

Contextual Info: Ordering number : EN 254ÛA 2SB1216/2SD1816 N 0.254OA SAiYO PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications . Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications

2SD1816

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1816 NPN PLANAR TRANSISTOR HIGH CURRENT SWITCHIG APPLICATIONS „ FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed

ic sc 4145

Abstract: 2SD1816S-E
Contextual Info: Ordering number : EN2540B 2SB1216/2SD1816 Bipolar Transistor http://onsemi.com – 100V, (–)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications

Contextual Info: UTC 2SD1816 NPN EPITAXIAL PLANAR TRANSISTOR HIGH CURRENT SWITCHIG APPLICATIONS FEATURES *Low collector-to-emitter saturation voltage *Good linearity of hFE *Small and slim package facilitating compactness of sets . *High fT *Fast switching speed 1 APPLICATION

d1816

Abstract: A10460 sd1816 2SB1216 2SD1816 4Q87 zs018 SANYO SS 1001
Contextual Info: SANYO SEMICONDUCTOR CORP SEE 7 cH 7 0 7 b D 00Q7205 1 T-3 3 -/? 2SB1216, 2SD1816 - T - 3 3 - D R P N P /N P N Epitaxial Planar Silicon Transistors 2044 High-Current Switching Applications 2540A Applications . Suitable for relay drivers, high-speed inverters, converters, and other

2SD1816

Abstract: TA7523
Contextual Info: UTC 2SD1816 NPN EPITAXIAL PLANAR TRANSISTOR HIGH CURRENT SWITCHIG APPLICATIONS FEATURES *Low collector-to-emitter saturation voltage *Good linearity of hFE *Small and slim package facilitating compactness of sets . *High fT *Fast switching speed 1 APPLICATION

2SB1216

Abstract: 2044B
Contextual Info: Ordering number:EN2540A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1216/2SD1816 High-Current Switching Applications Applications • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications. Package Dimensions

2SD1816

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1816 NPN PLANAR TRANSISTOR HIGH CURRENT SWITCHIG APPLICATIONS 1 FEATURES TO-252 * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed

D1816

Abstract: 2044B 2SB1216 2SD181 777T J-10 SB1216
Contextual Info: O rdering number: EN 2540A ~1 2SB1216/2SD1816 NO.2540A PNP/NPN Epitaxial Planar Silicon Transistors SA\YO 1 High-Current Switching Applications Applications . Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications

Contextual Info: 2SB1216/2SD1816 Ordering number : EN2540B SANYO Semiconductors DATA SHEET 2SB1216/2SD1816 PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications

ic sc 4145

Contextual Info: 2SB1216/2SD1816 Ordering number : EN2540B SANYO Semiconductors DATA SHEET 2SB1216/2SD1816 PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications

2SD1816

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1816 NPN EPITAXIAL PLANAR TRANSISTOR HIGH CURRENT SWITCHIG APPLICATIONS 1 FEATURES TO-252 * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT

2044B

Abstract: 2SB1216 2SD1816
Contextual Info: Ordering number:ENN2540A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1216/2SD1816 High-Current Switching Applications Package Dimensions unit:mm 2045B [2SB1216/2SD1816] 5.5 • Low collector-to-emitter saturation voltage. · Good linearity of hFE. · Small and slim package facilitating compactness of

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1816 NPN PLANAR TRANSISTOR HIGH CURRENT SWITCHIG APPLICATIONS  FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed

2SB1205

Abstract: 2SB1143 2sc4675
Contextual Info: SAfÊYO LOW-SATURATI ON VOLTAGE TR SERI ES Small-Signal Transistors. NO. 2 (*)MBIT process technology "New manufacturing method,Multi Base Island Transistors” For PNP, (-) sign is omitted. *:Tc=25’C. #:Contains base to emitter resistance(RBE). Type No.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

4336

Abstract: 2SC4846 2SD1634 4339 2SC3303 2SC3346 4327 2SC2735 2SC2847 2SC3142
Contextual Info: m « tt T y p e No. 2SC 4324 2SC 4325 2SC 4326 H € ✓ & SANYO Manuf. x s x s 2SC4871 □ —A 2SC3142 S TOSHIBA m. b NEC B ±L HITACHI g ± FU J I T S U m të T MA T S U S H I T A 2SC2735 2SC2847 2SD1412 2SD1444 2SC 4328 S a 2SC3258 2SC3869 2SC 4329

2SD1570

Abstract: 2SD1488 2SD412 2SD411 1116 1141A 2SC3293 2sd1033 2sd1193 2sd1323
Contextual Info: - 234 - m % Type No. tt 2 SD 1 2 1 2 * - H 2 SD 1 213 ^ = 2 SD 1 2 1 4 ^ fé fé fé fé 2 SD 1215 2 SD 1216 2 SD 1 217 ~« n 1 91 «- * 2 SD 1 21 9 ^ 2 SD 1 22 0 n T m T 2SD1393 T 7SD139S fé T - m *£ j£ 2 SD 1 22 3 y m ^ M 2 SD 1 22 5 / □ - A 2 SD 1 2 26

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink