2SC4324 Search Results

Contextual Info: TOSHIBA 2SC4324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE W ÊF mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . NF = 1.8dB, |S ie l = 9.5dB f=2GHz U nit in mm 2 2 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

TRANSISTOR C 5857

Abstract: transistor C5D 2SC4324
Contextual Info: TOSHIBA 2SC4324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4324 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm +0.2 2.9- a 3 • Low Noise Figure, High Gain. . N F = 1.8dB, |S2le |2= 9-5dB f = 2GHz II -€ 3 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TO SH IB A 2SC4324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 4 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.2 2.9 - 0.3 11 • Low Noise Figure, High Gain. • N F=1.8dB , |S2lel2= 9-5dB f=2GHz . " S M A X IM U M RATINGS (Ta = 25°C)

3425 nf

Abstract: 2SC4324 toshiba 2-3J1C
Contextual Info: TOSHIBA 2SC4324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4324 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.2 2 .9 - 0.3 -fr • Low Noise Figure, High Gain. • N F =1.8d B , |S 2 ie l 2 = 9.5dB f=2GHz M A X IM U M RATINGS (Ta = 25°C)

bt 1488

Abstract: 2SC4324 ON Semiconductor marking J50 AJ50
Contextual Info: TO SH IBA 2SC4324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4324 Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS + 0.2 • • 2.9-0.3 Low Noise Figure, High Gain. NF=1.8dB, |S2 ie l 2= 9.5dB f=2GHz -fr -3 MAXIMUM RATINGS (Ta = 25°C)

2SC4324

Abstract: TRANSISTOR C 5857
Contextual Info: 2SC4324 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4324 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 9.5dB f = 2 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

Contextual Info: IN S E R T IO N G A IN NF d B DC CURRENT G A IN |S Z l e | 2 (d B ) g 8 hFE 8 8 COLLECTOR COLLECTOR CURRENT CURRENT Ic Ic (mA) (» A ) Ï o ’ " Ü1 "l OS d T R A N S IT IO N FREQU ENCY fT (G H z) IN S E R T IO N GA IN 8 < OUTPUT C A PA C ITA N C E Cob ( p F )

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

2SC4470

Abstract: 4892 2sc3904 2SC3356 2SC3609 2sc3828 2SC4901 2SC3585 2sc3613 2SC4928
Contextual Info: - m £ 2SC 4856 2SC 4857 2 SC 4858 % tt Manuf. T y p e No. = SANYO >¥ =n =# 2 SC 4859 2SC 4860 2SC 4861 2SC 4862 2 SC 4863 2SC 4866 2SC 4867 2SC 4868 2SC 4869 2 m B NEC 2SC3937 2SC4904 2SC3704 2SC3609 2SC4093 2SC4900 2SC3704 2SC4228 2SC4903 2SC3585 2SC4902

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

2SC4326K

Abstract: 2SC4300 2SC4311 2-4F1C 2SC4313 2SC4302 2SC4314 2SC4328 2SC4337 2SC4338-Z
Contextual Info: - 196 - Ü X & fe T a = 2 5 lC , * E P Í á í c = 2 5 cC m & ?± xñ £ VcBO V'cEO Pc lc ( D O 1 P c* (max) (V) (A) (V) (W) (W) M Xi ft ( T a = 2 5 cC ) VCB (V) (uh) (min) OEPÍátypfil] ., hp I c BO (max) Vc e (V) / i \ Tr (max) (V) Ic / I e (A) / t\

high frequency diode

Abstract: 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
Contextual Info: 1. Using Device Selection Flowchart 1. Using Device Selection Flowchart 17 1. Using Device Selection Flowchart 1.1 General Purpose Low Frequency Transistor Selection Method Start I S ig n a l Frequency H igh Frequency ~ G H Z Low Frequency (D C ~ S e v e ra l M HZ)

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

3SK275

Abstract: 2sk882 transistor TT fet C439-4 FR90
Contextual Info: Surface Mount Device 2 Ultra Super-Mini Transistors (USM) - F5/F6 Electrical Characteristics (Ta=25°C) Type No. Application VcEO (V) Ic (mA) Pc (mW) Tj (°C) Mark Comple­ mentary Similar TO-92 Remarks (Super-Mini) 2SA1586 Low-frequency amplification

1623 FSJ

Contextual Info: 2 5 Q 4 3 2 4 S IL IC Q N N P N E P IT A X IA L P L A N A R T Y P E T R A N S IS T O R VHF —UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • U nit in mm Low Noise Figure, High Gain. NF = 1.8dB, |S2iel2= 9-5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

2sc 1203

Abstract: 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC 1207 N1408 2SC1815 NPN SOT-23
Contextual Info: 5. List of Lead Type and Surface Mount Type Interchangeable Products CTransistors for Low Frequency Small Signal Equipm ent> TO-92 VCEO k V (mA) N PN 50 150 2SC 1815 50 MINI PNP 2SA 1015 N PN 2SC 2458 SSM PNP 2S A 1048 2SA 1015L 2SC 2458L 2SA 1048L 100 2SC2240

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi