1SS1 Search Results

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

Contextual Info: 1SS193 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Unit: mm Ultra High Speed Switching Application  Small package : SC-59  Low forward voltage : VF 3 = 0.9V (typ.)  Fast reverse recovery time : trr = 1.6ns (typ.)  Small total capacitance

marking e3 sot

Abstract: 1SS190 smd sot23 marking E3
Contextual Info: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION 1SS190 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage :VF 3 = 0.92 V(Typ.) 0.55 Small Package 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Reverse Recovery Time :trr = 1.6 ns(Typ.)

Contextual Info: 1SS187 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOT-23 • Fast Switching Speed • For general purpose switching applications SOT-23 Dim. A A1 b c D E E1 e e1 L MECHANICAL DATA • Case: SOT-23 Plastic

4558 dd

Abstract: 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN
Contextual Info: F5/F6 Type No. 1 1 öS Max. Rating V r V SMV/SM6 USV/US8 Structure P(mW)* IO(mA) SMV/SM6 USVAJS6 Connection Mark 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 HN1D02F HN1D02FU 80 100 300

Contextual Info: 1SS198 Silicon Schottky Barrier Diode for Various Detector, High speed Switching HITACHI ADE-208-298A Z Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • Small glass package (MHD) enables easy mounting and high reliability.

HITACHI 1SS106

Contextual Info: 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching HITACHI ADE-208-153A Z Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information Type No.

1SS154

Abstract: varicap ghz
Contextual Info: 1SS154 SPICE PARAMETER 20020226 SPICE MODEL: DATA FORMAT: SPICE SYMBOL: BERKLEY SPICE2G6 DIODE MODEL MODEL FORMAT - TT(s),EG(eV),XTI(-) FREQUENCY RANGE: f = 0.1 to 3 GHz VOLTAGE RANGE: Va = -5 to 0.4V AMBIENT TEMPERATURE:

Contextual Info: Product specification 1SS193 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VF 3 = 0.9 V(Typ.) 0.55 Small Package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Reverse Recovery Time :trr = 1.6 ns(Typ.) +0.05

1SS187

Contextual Info: RECTRON 1SS187 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC

Switching Diodes

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS184 Features • x x x • • Halogen free available upon request by adding suffix "-HF" Low Forward Voltage

1SS193

Contextual Info: RECTRON 1SS193 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC

Switching Diodes

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS181 Features x x x • • • 150mW High Speed Switching Diodes 80 Volt Low Forward Voltage Low Leakage Current

Contextual Info: SMD Type Product specification 1SS181 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● Fast reverse recovery time :trr=1.6ns Typ. 1 ● Small total capacitance :CT=2.2pF(Typ.) 0.55 ● Low forward voltage. :VF(3)=0.92V(Typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 • Features

MARKING toshiba

Abstract: 1SS190 000707EAA
Contextual Info: 1SS190 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS190 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)

Contextual Info: 1SS187 TO SHIBA TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 S S 1 87 Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. 2 .5 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + - 0.5 0.3 : SC-59 : Vp 3 = 0.92V (Typ.)

1SS133

Abstract: DIODE 1SS133
Contextual Info: LESHAN RADIO COMPANY, LTD. Switching diode 1SS133 . 300mW DO-34 . Glass silicon switching diodes We declare that the material of product compliance with RoHS requirements. Product Characteristic Absolute Maximum Ratings Ta=25°C TYPE VRM(V) VR(V) IFM(mA)

marking G3

Abstract: 1SS196 J-STD-020D
Contextual Info: 1SS196 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOT-23 • Fast Switching Speed • For general purpose switching applications SOT-23 Dim. A A1 b c D E E1 e e1 L L1 MECHANICAL DATA • Case: SOT-23 Plastic

1SS106

Abstract: 1ss106 application note ADE-208-153A 1SS106 diode REJ03G0125-0200Z
Contextual Info: 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0125-0200Z Previous: ADE-208-153A Rev.2.00 Oct.23.2003 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA ÏÏ7 Î>Ë| ñCHTESO GDOTBlb 3 | ~ DISCRETE/OPTO ' 67C -Silicon Planar Typé D ~ T ¿W- 0 °) 09316 ~ 1SS104 Diode Unit in mm GENERAL PURPOSE RECTIFIER APPLICATIONS. FEATURES : . Low Forward Voltage : Vp=1.3V (Max.)

1SS176

Contextual Info: 1SS176 SILICON EPITAXIAL PLANAR DIODE Switching diode Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Reverse Voltage

1SS133

Contextual Info: 1SS133 HIGH SPEED SWITCHING DIODE Features • Glass sealed envelope • High speed Max. 0.5 Max. 0.45 • High reliability Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand Black Cathode Band Black Part No. XXX Max. 2.9 XXX Max. 3.9 ST

Contextual Info: 1SS184 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF 3 = 0.9V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : T = 2.2pF (typ.)

1SS165

Abstract: Hitachi DSA001653
Contextual Info: 1SS165 Silicon Schottky Barrier Diode for CATV Balanced Mixer ADE-208-397 Z Rev. 0 Oct. 1995 Features • Low capacitance. (C = 1.0pF max) • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. Cathode band