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    ON SEMICONDUCTOR MARKING J50 Search Results

    ON SEMICONDUCTOR MARKING J50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ON SEMICONDUCTOR MARKING J50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601

    marking 513 SOD-323

    Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    j5021

    Abstract: J5021-O J5021-R FJPF5021
    Text: FJPF5021 FJPF5021 High Voltage and High Reliability • High Speed Switching : tF = 0.1µs Typ. • Wide SOA TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage


    Original     		PDF FJPF5021 O-220F FJPF5021 FJPF5021OTU FJPF5021RTU j5021 J5021-O J5021-R

    J5027-R

    Abstract: J5027R transistor j5027-r j5027 FJP5027TU transistor J5027R FJP5027OTU TO220 Semiconductor Packaging FJP5027
    Text: FJP5027 FJP5027 High Voltage and High Reliability • High Speed Switching • Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value


    Original     		PDF FJP5027 O-220 FJP5027 FJP5027OTU FJP5027RTU FJP5027TU J5027-R J5027R transistor j5027-r j5027 transistor J5027R TO220 Semiconductor Packaging

    j5021

    Abstract: J5021-O
    Text: FJP5021 FJP5021 High Voltage and High Reliability • High Speed Switching : tF = 0.1µs Typ. • Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage


    Original     		PDF FJP5021 O-220 FJP5021 FJP5021OTU j5021 J5021-O

    tp394

    Abstract: tp182 marking code diode R12 sot23-6 tp154 tp230 Lattice Semiconductor Package Diagrams 256-Ball fpBGA marking F3 sot23-6 TP147 TP265 HDR10X1
    Text: MachXO Standard Evaluation Board - Revision 000 User’s Guide April 2007 Revision: EB20_01.2 Lattice Semiconductor MachXO Standard Evaluation Board - Revision 000 User’s Guide Introduction The MachXO Standard Evaluation board provides a convenient platform to evaluate electrical characteristics of the


    Original     		PDF MachXO640 256-ball 33MHz tp394 tp182 marking code diode R12 sot23-6 tp154 tp230 Lattice Semiconductor Package Diagrams 256-Ball fpBGA marking F3 sot23-6 TP147 TP265 HDR10X1

    2SJ507

    Abstract: No abstract text available
    Text: 2SJ507 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ507 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) z High forward transfer admittance


    Original     		PDF 2SJ507 2SJ507

    RF NPN POWER TRANSISTOR 2.5 GHZ

    Abstract: MMBR911LT1
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMBR911LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MMBR911LT1 Freescale Semiconductor, Inc. ARCHIVE INFORMATION • High Gain–Bandwidth Product fT = 7.0 GHz Typ @ 30 mA


    Original     		PDF MMBR911LT1/D MMBR911LT1 A/500 RF NPN POWER TRANSISTOR 2.5 GHZ MMBR911LT1

    Untitled

    Abstract: No abstract text available
    Text: 2SJ509 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ509 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) z High forward transfer admittance


    Original     		PDF 2SJ509

    siemens rs 1003

    Abstract: TRANSISTOR BI 187 Q62702-F1592 VPS05605 TS1440
    Text: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3 • For low current applications 4 • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability


    Original     		PDF VPS05605 Q62702-F1592 OT-343 -j100 Sep-09-1998 siemens rs 1003 TRANSISTOR BI 187 Q62702-F1592 VPS05605 TS1440

    2SJ509

    Abstract: J509
    Text: 2SJ509 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ509 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SJ509 2SJ509 J509

    420 NPN Silicon RF Transistor

    Abstract: transistor 1346 Q62702-F1591 BFP420 VPS05605 RNF50 TP66 zs transistor transistor fc 1013 Semiconductor 1346 transistor
    Text: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3 • For high gain low noise amplifiers 4 • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability


    Original     		PDF VPS05605 Q62702-F1591 OT-343 45GHz -j100 Jul-14-1998 420 NPN Silicon RF Transistor transistor 1346 Q62702-F1591 BFP420 VPS05605 RNF50 TP66 zs transistor transistor fc 1013 Semiconductor 1346 transistor

    J507

    Abstract: 2SJ507
    Text: 2SJ507 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ507 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SJ507 J507 2SJ507

    Q62702-F1590

    Abstract: 5198 transistor equivalent Transistor C 5198 VPS05605 transistor BI 342 746
    Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3 • For medium power amplifiers 4 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain G ma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metalization for high reliability


    Original     		PDF VPS05605 Q62702-F1590 OT-343 50Ohm -j100 Sep-09-1998 Q62702-F1590 5198 transistor equivalent Transistor C 5198 VPS05605 transistor BI 342 746

    J509

    Abstract: 2SJ509
    Text: 2SJ509 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ509 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) z High forward transfer admittance


    Original     		PDF 2SJ509 J509 2SJ509

    transistor b 1238

    Abstract: Q62702-F1794 transistor bf 520 transistor bfp 520
    Text: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz 2 • Transition frequency fT = 45 GHz 1


    Original     		PDF VPS05605 Q62702-F1794 OT-343 50Ohm 45GHz -j100 Sep-09-1998 transistor b 1238 Q62702-F1794 transistor bf 520 transistor bfp 520

    BAT 545

    Abstract: No abstract text available
    Text: SIEMENS Silicon Dual Schottky Diode BAT 15-099 Preliminary Data Features • DBS mixer application to 12 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


    OCR Scan     		PDF Q62702-A66 P-SOT-143-4-6 EHA0701! BAT 545

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Dual Schottky Diode BAT 15-099 Preliminary Data Features • DBS mixer application to 12 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


    OCR Scan     		PDF Q62702-A66 P-SOT-143-4-6 EHD07Ã 023SbOS 015Q341

    Semiconductor 1346 transistor

    Abstract: DIODE bfp 86 marking 53 Sot-343
    Text: SIEMENS SI EG ET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1591 OT-343 Semiconductor 1346 transistor DIODE bfp 86 marking 53 Sot-343

    BF 914 transistor

    Abstract: transistor R 405 transistor bf 405 transistor 1546 405 marking transistor s parameters noise transistor BF 914
    Text: SIEMENS SIEGET 25 BFP 405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1592 OT-343 BF 914 transistor transistor R 405 transistor bf 405 transistor 1546 405 marking transistor s parameters noise transistor BF 914

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1590 OT-343 2200b IS21I2 fl235bQS 0122QQ7 0235b05

    TEA 1091

    Abstract: DIODE bfp 86 siemens rs 1091
    Text: SIEMENS SI EGET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1591 OT-343 IS21I2 235LG5 E35bD5 01EEQQ0 TEA 1091 DIODE bfp 86 siemens rs 1091

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF Q62702-F1215 T-143 E3Sb05 23SLQ5