HN2D01FU Search Results

HN2D01FU

Contextual Info: HN2D01FU 東芝ダイオード シリコンエピタキシャルプレーナ形ダイオード HN2D01FU ○ 超高速スイッチング用 z z z z 単位: mm ウルトラスーパーミニ 6 端子 パッケージに 3 素子を内臓しています。 順方向特性が良い。

Contextual Info: SILICON EPITAXIAL PLANAR TY P E HN2D01FU U LTRA HIGH SPEED SW IT C H IN G A PPLIC A TIO N . • • • • HN2D01FU is composed of 3 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance PIN A S S IG N M E N T TOP V IEW 6 5 1rQ i X 1 independent diodes.

HN2D01FU

Contextual Info: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application l HN2D01FU is composed of 3 independent diodes. l Low forward voltage : VF 3 = 0.98V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.)

HN2D01FU

Abstract: HN2D01 1q31
Contextual Info: TOSHIBA HN2D01 FU T O S H IB A D IO D E SILICO N EPITA X IA L PLA N A R TYPE H N 2 D 0 1 FU ULTRA H IG H SPEED S W IT C H IN G A P P L IC A T IO N . U nit in mm • HN2D01FU is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ.

Contextual Info: TOSHIBA HN2D01 FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 2 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • HN2D01FU is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ. •

diode Z47

Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Contextual Info: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352

Contextual Info: TOSHIBA HN2D01 FU T O S H IB A D IO D E SILICO N EPITA X IA L PLA N A R TYPE H N 2 D 0 1 FU ULTRA H IG H SPEED S W IT C H IN G A P P L IC A T IO N . Unit in mm • HN2D01FU is composed of 3 independent diodes. • Low Forward Voltage • F ast Reverse Recovery Time : tr r = 1.6ns Typ.

Contextual Info: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit: mm Ultra High Speed Switching Application HN2D01FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance

Contextual Info: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application HN2D01FU is composed of 3 independent diodes. Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance

HN2D01FU

Contextual Info: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application HN2D01FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance

HN2D01FU

Contextual Info: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application z HN2D01FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)

Contextual Info: TOSHIBA HN2D01FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H mN ? mnm r n i F 11 'm • ■ ULTRA HIGH SPEED 5WITCHING APPLICATION. Unit in mm HN2D01FU is composed of 3 independent diodes. TT Low Forward Voltage A A m T /m • Fast Reverse Recovery Time : trr = 1.6ns Typ.

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

4558 dd

Abstract: 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN
Contextual Info: F5/F6 Type No. 1 1 öS Max. Rating V r V SMV/SM6 USV/US8 Structure P(mW)* IO(mA) SMV/SM6 USVAJS6 Connection Mark 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 HN1D02F HN1D02FU 80 100 300

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

S3 DIODE schottky

Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Contextual Info: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching

LT 543 common cathode

Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current

TPCA*8030

Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S

CMZB220

Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード

HN4C06J

Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
Contextual Info: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2

ISL9504

Abstract: j4310 BD9828 ISL9504B NVIDIA G84m RN5VD30A-F SLG2AP101 Q7080 88E8058 PP3V42G3H
Contextual Info: 8 6 7 04/02/2007 Contents D Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM