SSM3J16 Search Results
SSM3J16 Price and Stock
Toshiba America Electronic Components SSM3J168F,LFMOSFET P-CH 60V 400MA S-MINI |
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SSM3J168F,LF | Digi-Reel | 14,541 | 1 |
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SSM3J168F,LF | Reel | 16 Weeks | 3,000 |
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SSM3J168F,LF | 67,968 |
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Toshiba America Electronic Components SSM3J168F,LXHFSMOS LOW RON VDS:-60V VGSS:+10/- |
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SSM3J168F,LXHF | Reel | 6,000 | 3,000 |
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SSM3J168F,LXHF | Reel | 36 Weeks | 3,000 |
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SSM3J168F,LXHF | 24 Weeks | 3,000 |
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Toshiba America Electronic Components SSM3J16FU(TE85L,F)SMALL LOW RON PCH MOSFETS VDSS:- |
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SSM3J16FU(TE85L,F) | Digi-Reel | 1,870 |
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SSM3J16FU(TE85L,F) | Reel | 111 Weeks | 3,000 |
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Toshiba America Electronic Components SSM3J16CT(TPL3)MOSFET P-CH 20V 100MA CST3 |
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SSM3J16CT(TPL3) | Digi-Reel | 1 |
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Toshiba America Electronic Components SSM3J16CT,L3F- Tape and Reel (Alt: SSM3J16CT,L3F) |
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SSM3J16CT,L3F | Reel | 111 Weeks | 10,000 |
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SSM3J16 Datasheets (11)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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| SSM3J168F,LF |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 60V 400MA S-MINI | Original | |||
| SSM3J168F,LXHF |
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SMOS LOW RON VDS:-60V VGSS:+10/- | Original | |||
| SSM3J16CT |
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Small-signal MOS FET | Original | |||
| SSM3J16CT(TPL3) |
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FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 100MA CST3 | Original | |||
| SSM3J16FS |
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Small-signal MOS FET | Original | |||
| SSM3J16FS(TE85L,F) |
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SSM3J16FS - Trans MOSFET P-CH 20V 0.1A 3-Pin SSM T/R | Original | |||
| SSM3J16FU |
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Small-signal MOS FET | Original | |||
| SSM3J16FUTE85LF |
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SSM3J16FUTE85LF - Trans MOSFET P-CH 20V 0.1A 3-Pin USM T/R | Original | |||
| SSM3J16FU(TE85L,F) |
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SMALL LOW RON PCH MOSFETS VDSS:- | Original | |||
| SSM3J16FV |
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FET Transistor, Field Effect Transistor Silicon P Channel MOS Type for High Speed Switching Applications and Analog Switch Applications | Original | |||
| SSM3J16TE |
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FET Transistor, Field Effect Transistor Silicon P Channel MOS Type for High Speed Switching Applications and Analog Switch Applications | Original |
SSM3J16 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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SSM3J16FUContextual Info: SSM3J16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FU High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance Unit: mm : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) |
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SSM3J16FU SSM3J16FU | |
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Contextual Info: SSM3J16FU 東芝電界効果トランジスタ シリコンPチャネルMOS形（π-MOSVI） SSM3J16FU 高速スイッチング用 アナログスイッチ用 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : RDS ON = 8Ω (最大) (@VGS = −4 V) |
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SSM3J16FU | |
SSM3J16FSContextual Info: SSM3J16FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FS High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance Unit: mm : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) |
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SSM3J16FS SSM3J16FS | |
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Contextual Info: SSM3J16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type -MOSVI SSM3J16FU High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance Unit: mm : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) |
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SSM3J16FU | |
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Contextual Info: SSM3J16CT TOSHIBA Field Effect Transistor Silicon P Channel MOS Type -MOSVI SSM3J16CT High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance Unit: mm : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) |
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SSM3J16CT | |
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Contextual Info: SSM3J16TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low on-resistance : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) |
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SSM3J16TE | |
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Contextual Info: SSM3J16CT TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16CT High Speed Switching Applications Analog Switch Applications Unit: mm 0.5±0.03 : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) : Ron = 45 Ω (max) (@VGS = −1.5 V) |
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SSM3J16CT | |
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Contextual Info: SSM3J16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FU High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance Unit: mm : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) |
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SSM3J16FU | |
SSM3J16TEContextual Info: SSM3J16TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low on-resistance : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) |
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SSM3J16TE SSM3J16TE | |
SSM3J16CTContextual Info: SSM3J16CT 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J16CT 高速スイッチング用 アナログスイッチ用 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 8Ω 最大 (@VGS = −4 V) |
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SSM3J16CT SSM3J16CT | |
SSM3J16TEContextual Info: SSM3J16TE 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J16TE 高速スイッチング用 アナログスイッチ用 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 8 Ω 最大 (@VGS = −4 V) |
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SSM3J16TE 4mmX25 SSM3J16TE | |
SSM3J16FVContextual Info: SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSVI SSM3J16FV High Speed Switching Applications Analog Switch Applications Unit: mm : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) : RDS(ON) = 45 Ω (max) (@VGS = −1.5 V) |
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SSM3J16FV SSM3J16FV | |
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Contextual Info: SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FV High Speed Switching Applications Analog Switch Applications Unit: mm Low on-resistance : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) : Ron = 45 Ω (max) (@VGS = −1.5 V) |
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SSM3J16FV | |
SSM3J16FUContextual Info: SSM3J16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FU High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance Unit: mm : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) |
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SSM3J16FU SC-70 SSM3J16FU | |
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SSM3J16FVContextual Info: SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FV High Speed Switching Applications Analog Switch Applications Unit: mm Low on-resistance : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) : Ron = 45 Ω (max) (@VGS = −1.5 V) |
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SSM3J16FV SSM3J16FV | |
SSM3J16FSContextual Info: SSM3J16FS 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J16FS 高速スイッチング用 アナログスイッチ用 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 8Ω 最大 (@VGS = −4 V) |
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SSM3J16FS 4mmX25 SSM3J16FS | |
SSM3J16FVContextual Info: SSM3J16FV 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J16FV 高速スイッチング用 アナログスイッチ用 絶対最大定格 Ta = 25°C 記 号 定 格 VDS −20 V ゲ ー ト ・ ソ ー ス 間 電 圧 VGSS ±10 V |
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SSM3J16FV 4mmX25 SSM3J16FV | |
SSM3J16TEContextual Info: SSM3J16TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low on-resistance : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) |
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SSM3J16TE SSM3J16TE | |
SSM3J16FSContextual Info: SSM3J16FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FS High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low on-resistance : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) |
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SSM3J16FS SSM3J16FS | |
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Contextual Info: SSM3J16CT TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16CT High Speed Switching Applications Analog Switch Applications Unit: mm 0.5±0.03 : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) : Ron = 45 Ω (max) (@VGS = −1.5 V) |
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SSM3J16CT | |
SSM3J16FVContextual Info: SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FV High Speed Switching Applications Analog Switch Applications Symbol Rating Unit Drain-Source voltage VDS −20 V Gate-Source voltage VGSS ±10 V ID −100 IDP −200 PD Note 150 |
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SSM3J16FV 4mmX25 SSM3J16FV | |
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Contextual Info: SSM3J16CT TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSVI SSM3J16CT High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance Unit: mm : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) |
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SSM3J16CT | |
SSM3J16FVContextual Info: SSM3J16FV Preliminary TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FV High Speed Switching Applications Analog Switch Applications Symbol Rating Unit Drain-Source voltage VDS −20 V Gate-Source voltage VGSS ±10 V ID −100 IDP −200 |
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SSM3J16FV SSM3J16FV | |
SSM3J16FUContextual Info: SSM3J16FU 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J16FU 高速スイッチング用 アナログスイッチ用 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 8Ω 最大 (@VGS = −4 V) |
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SSM3J16FU SC-70 4mmX25 SSM3J16FU | |