DF2S5.6FS Search Results

DF2S5.6FS

Contextual Info: DF2S5.6FS 東芝ＥＳＤ保護用ダイオード DF2S5.6FS ○ ESD 保護用 単位: mm ※本製品はＥＳＤ保護用ダイオードでありＥＳＤ保護用以外の用途 定電圧ダイオード用途を含むがこれに限らない には使用はできません。

Contextual Info: DF2S5.6FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S5.6FS Diodes for Protecting against ESD Unit in mm The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. 0.6±0.05

Contextual Info: DF2S5.6FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S5.6FS Diodes for Protecting against ESD Unit in mm The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. 0.6±0.05

DF2S5.6FS

Contextual Info: DF2S5.6FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S5.6FS Product for Use Only as Protection against Electrostatic Discharge ESD Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic 0.07M A Symbol Rating Unit Power dissipation

Contextual Info: DF2S5.6FS TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type DF2S5.6FS Diodes for Protecting Against ESD Unit in mm Because devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost.

Contextual Info: DF2S5.6FS TOSHIBA Diodes for Protecting against ESD DF2S5.6FS Product for Use Only as Protection against Electrostatic Discharge ESD . *This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation,

Contextual Info: DF2S5.6FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S5.6FS Product for Use Only as Protection against Electrostatic Discharge ESD Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic 0.07M A Symbol Rating Unit Power dissipation

Contextual Info: DF2S5.6FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S5.6FS Diodes for Protecting against ESD Unit in mm The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. 0.6±0.05

Contextual Info: DF2S5.6FS ESD Protection Diodes Silicon Epitaxial Planar DF2S5.6FS 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.

Contextual Info: DF2S5.6FS ESD Protection Diodes Silicon Epitaxial Planar DF2S5.6FS 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.

Contextual Info: DF2S5.6FS ESD Protection Diodes Silicon Epitaxial Planar DF2S5.6FS 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.

Contextual Info: DF2S5.6FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S5.6FS Product for Use Only as Protection against Electrostatic Discharge ESD Unit: mm 0.6±0.05 Characteristic 0.07M A Symbol Rating Unit Power dissipation P 150* mW Junction temperature

DF2S5.6FS

Contextual Info: DF2S5.6FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S5.6FS Diodes for Protecting against ESD Unit in mm The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. 0.6±0.05

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

LT 543 common cathode

Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current

TPCA*8030

Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S

CMZB220

Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード

DF2S6.8FS

Abstract: DF6A6.8FU DF3A8.2FU DF2S12FS DF2S12FU DF2S16FS SC-81 DF3A3.3FE esm 231 DF2S5.6FS
Contextual Info: 新製品ガイド 2004-9 東芝半導体 新製品ガイド ESD 保護用ダイオード semiconductor 2004 http://www.semicon.toshiba.co.jp/ ESD保護用ダイオード ＥＳＤ保護用ダイオードとは！ インターフェイスなどから侵入する静電気（ＥＳＤ）を吸収し

CMG03

Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A

2fu smd transistor

Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

gs0t05c

Abstract: VESD05-02V NUP2105 phillips semiconductors GS0T12c NUP2105LT1G sod-923 SM05T1G DF3A5.6FV SOD-123FL
Contextual Info: TVS/ESD Protection Cross Reference ON Part ESD5Z2.5T1G ESD5Z3.3T1G ESD5Z5.0T1G ESD5Z6.0T1G ESD5Z7.0T1G ESD5Z12T1G UESD3.3DT5G UESD5.0DT5G UESD6.0DT5G UESD3.3ST5G UESD5.0ST5G UESD12ST5G DF3A6.8FUT1G NUP1105LT1G NUP1301ML3T1G NUP2105LT1G SM05T1G SM12T1G SL05T1G