SOD523 LAND PATTERN Search Results
SOD523 LAND PATTERN Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BQ2052SN-A515 |
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Primary Lithium Gas Gauge W/High-Speed 1-Wire (HDQ) Interface, 3 Prgmable LED Patterns 16-SOIC -20 to 70 |
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CSD83325L |
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12V, N ch NexFET MOSFET™, dual LGA, 5.9mOhm 6-PICOSTAR |
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CSD87501L |
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30V, N ch NexFET MOSFET™, dual common drain LGA, 5.5mOhm 10-PICOSTAR |
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CSD87381P |
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30V, Nch synchronous buck NexFET MOSFET™, 3x2.5 LGA, 15A 5-PTAB -55 to 150 |
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CSD23381F4 |
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-12V, P ch NexFET MOSFET™, single LGA 0.6x1.0, 175mOhm 3-PICOSTAR -55 to 150 |
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SOD523 LAND PATTERN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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UCLAMP3301Contextual Info: uClamp3301H Low Voltage µClampTM for ESD and CDE Protection PROTECTION PRODUCTS - MicroClampTM Description Features The µClamp series of Transient Voltage Suppressors TVS are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, |
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ClampTM3301H uClamp3301H UCLAMP3301 | |
SOD523 land patternContextual Info: uClamp0501H µClampTM 1-Line ESD protection PROTECTION PRODUCTS - MicroClamp Description Features The µClamp series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD. It is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional area junctions for conducting high transient currents. It offers superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. |
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clampTM0501H OD-523 uClamp0501H SOD523 land pattern | |
SOD523 land pattern
Abstract: "punchthrough voltage" AND ESD 3301H
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uClamp3301H ClampTM3301H 3301H SOD523 land pattern "punchthrough voltage" AND ESD | |
SOD523 land pattern
Abstract: clamp 1201h
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uClamp1201H ClampTM1201HEFERENCE 1201H SOD523 land pattern clamp 1201h | |
UCLAMP1201HContextual Info: uClamp1201H µClampTM 1-Line ESD Protection PROTECTION PRODUCTS - MicroClampTM Description Features The µClamp series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD. It is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDAs. It features large cross-sectional area junctions for conducting high transient currents. It offers |
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ClampTM1201H UCLAMP1201H | |
SOD523 land pattern
Abstract: Signal Path designer Union Semiconductor
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UM5075 UM5075 OD523 OD523 SOD523 land pattern Signal Path designer Union Semiconductor | |
clamp3301H
Abstract: 81611
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ClampTM3301H uClamp3301H clamp3301H 81611 | |
Contextual Info: uClamp3301H Low Voltage ClampTM for ESD and CDE Protection PROTECTION PRODUCTS - MicroClampTM Description Features The μClamp series of Transient Voltage Suppressors TVS are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, |
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uClamp3301H ClampTM3301H 3301H | |
Contextual Info: UM5075 Single Line ESD Protection Diode Array UM5075 SOD523 General Description The UM5075 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional |
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UM5075 UM5075 OD523 | |
land pattern for sot109-1
Abstract: TSSOP-8 footprint and soldering sot-23 SOD87 footprint
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DO-35 DO-41 DO-34 OD80C OD123F HXSON12) OT983 land pattern for sot109-1 TSSOP-8 footprint and soldering sot-23 SOD87 footprint | |
Contextual Info: uClamp0501H µClampTM 1-Line ESD protection PROTECTION PRODUCTS - MicroClamp Description Features The µClamp series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD. It is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional area junctions for conducting high transient currents. It offers superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. |
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uClamp0501H clampTM0501H 0501H | |
lcd 94V0
Abstract: marking 3H diode 94v0 lcd marking code 3h diode
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3301H uClamp3301H lcd 94V0 marking 3H diode 94v0 lcd marking code 3h diode | |
um505
Abstract: Signal Path designer Union Semiconductor
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UM5055 UM5055 OD523 OD523packagely um505 Signal Path designer Union Semiconductor | |
Contextual Info: E2 A 0.8 0.5 b D E - + E1 2 A1 θ C L Recommended Land Pattern 4.0 Symbol A A1 b C D E E1 E2 L θ Dimensions In Millmeters Min Max 0.51 0.77 0.50 0.70 0.25 0.35 0.08 0.15 0.75 0.85 1.10 1.30 1.50 1.70 0.20REF 0.01 0.07 7°REF Dimensions In Inches Min Max 0.020 |
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20REF 008REF SC-79 OD-523 | |
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UCLAMP3301h
Abstract: marking code 3h diode marking 3H diode
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uClamp3301H clampTM3301H 3301H UCLAMP3301h marking code 3h diode marking 3H diode | |
SOD523 land pattern
Abstract: alpha date code System MARK BE diode SOD523 general MARKING ESd SOD523 AOZ8221 AOZ8221NI-05L
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AOZ8221 AOZ8221 OD523 OD523 SOD523 land pattern alpha date code System MARK BE diode SOD523 general MARKING ESd SOD523 AOZ8221NI-05L | |
SPE1211
Abstract: SOD523 land pattern
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SPE1211 SPE1211 OD-523 SOD523 land pattern | |
MARK BE diode SOD523
Abstract: diode marking code 12L MARK BE diode SOD523 general AOZ8201 AOZ8201NI-05L AOZ8201NI-12L 12L marking AOS date code System diode body mark a1
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AOZ8201 AOZ8201 OD523 OD523 MARK BE diode SOD523 diode marking code 12L MARK BE diode SOD523 general AOZ8201NI-05L AOZ8201NI-12L 12L marking AOS date code System diode body mark a1 | |
MARKING G SOD523Contextual Info: AOZ8201 One-line TVS Diode General Description Features The AOZ8201 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. This state-ofthe-art device utilizes AOS leading edge Trench Vertical |
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AOZ8201 AOZ8201 OD523 OD523 MARKING G SOD523 | |
marking zk TVS
Abstract: Signal Path designer Union Semiconductor
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UM5060 UM5060 OD523 OD523 marking zk TVS Signal Path designer Union Semiconductor | |
AOZ8201
Abstract: AOZ8201NI-05L AOZ8201NI-12L SOD523 land pattern DIODE ED 16 AOS date code System General Semiconductor diode marking ME
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AOZ8201 AOZ8201 OD523 AOZ8201NI-05L AOZ8201NI-12L SOD523 land pattern DIODE ED 16 AOS date code System General Semiconductor diode marking ME | |
aoz8231
Abstract: AOZ8221 AOZ8221NI-05L SOD523 land pattern MARKING CODE AOZ AOS date code System
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AOZ8221 AOZ8221 OD523 OD523 aoz8231 AOZ8221NI-05L SOD523 land pattern MARKING CODE AOZ AOS date code System | |
Contextual Info: Union Semiconductor, Inc. UM5055 http://www.union-ic.com Single Line ESD Protection Diode In Portable Equipment Description The UM5055 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional area junctions for conducting high |
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UM5055 UM5055 | |
lm2804
Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
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BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 |