2SC6026 Search Results
2SC6026 Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy | 
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| 2SC6026MFV | 
 
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | 
2SC6026 Datasheets (16)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 2SC6026 | 
 
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Transistor for Low-Frequency Small-Signal Amplification | Original | 131.61KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026CT | 
 
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Japanese - Transistors | Original | 224.05KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026CT | 
 
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Transistors | Original | 144.04KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026CT-GR,L3F | 
 
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TRANS NPN 50V 0.1A CST3 | Original | 163.36KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026CTGRTPL3 | 
 
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Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 50V 100MA FSM | Original | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026CT-Y(TPL3) | 
 
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Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 50V 100MA FSM | Original | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026-GR | 
 
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2SC6026 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1E1A, FSM, 3 PIN, BIP General Purpose Small Signal | Original | 141.08KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026MFV | 
 
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | Original | 256.83KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026MFV-GR | 
 
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2SC6026 - TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, VESM, 2-1L1A, 3 PIN, BIP General Purpose Small Signal | Original | 146.43KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026MFVGR,L3F | 
 
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 50V 0.15A VESM | Original | 162.23KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026MFV-GR(TPL3 | 
 
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2SC6026 - Bipolar Transistors 150mA 50V | Original | 146.43KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026MFV-Y | 
 
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2SC6026 - TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, VESM, 2-1L1A, 3 PIN, BIP General Purpose Small Signal | Original | 146.43KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026MFV-Y,L3F | 
 
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NPN TRANSISTOR VCEO50V IC0.15A H | Original | 166.33KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026MFV-Y(TPL3) | 
 
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2SC6026 - Bipolar Transistors 150mA 50V | Original | 146.43KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 2SC6026-Y | 
 
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2SC6026 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1E1A, FSM, 3 PIN, BIP General Purpose Small Signal | Original | 141.08KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026-Y(TPL3) | 
 
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2SC6026 - Bipolar Transistors 100mA 50V | Original | 141.08KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC6026 Price and Stock
Toshiba America Electronic Components 2SC6026CT-GR,L3FTRANS NPN 50V 0.1A CST3 | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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2SC6026CT-GR,L3F | Cut Tape | 48,670 | 1 | 
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Toshiba America Electronic Components 2SC6026MFVGR,L3FTRANS NPN 50V 0.15A VESM | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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2SC6026MFVGR,L3F | Cut Tape | 26,459 | 1 | 
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2SC6026MFVGR,L3F | Reel | 12 Weeks | 8,000 | 
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2SC6026MFVGR,L3F | 13,686 | 
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2SC6026MFVGR,L3F | 8,000 | 8,000 | 
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2SC6026MFVGR,L3F | 8,000 | 12 Weeks | 8,000 | 
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Toshiba America Electronic Components 2SC6026MFV-Y,L3FTRANS NPN 50V 0.15A VESM | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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2SC6026MFV-Y,L3F | Cut Tape | 21,468 | 1 | 
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2SC6026MFV-Y,L3F | Reel | 12 Weeks | 8,000 | 
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2SC6026MFV-Y,L3F | 21,258 | 
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Toshiba America Electronic Components 2SC6026CT-Y(TPL3)TRANS NPN 50V 0.1A CST3 | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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2SC6026CT-Y(TPL3) | Reel | 10,000 | 
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2SC6026CT-Y(TPL3) | 1,198 | 
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Toshiba America Electronic Components 2SC6026CT-GR,L3F(T2SC6026CT-GR,L3F(T | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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2SC6026CT-GR,L3F(T | 9,950 | 848 | 
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2SC6026CT-GR,L3F(T | Cut Tape | 9,995 | 5 | 
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2SC6026CT-GR,L3F(T | Cut Tape | 9,950 | 0 Weeks, 1 Days | 10 | 
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2SC6026 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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 Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SC6026CT Category: Transistors /Bipolar Small-Signal Transistors/General Purpose Transistors Single  | 
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2SC6026CT C6026CT 2SA2154CT 2SC6026CT 16-Apr-09 | |
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 Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)  | 
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2SC6026MFV 2SA2154MFV | |
2SA21
Abstract: 2SA2154 2SC6026 
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2SA2154 2SC6026 2SA21 2SA2154 2SC6026 | |
2SA2154MFV
Abstract: 2SC6026MFV 
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2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV | |
2SC6026CT
Abstract: 2SA2154CT 
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2SC6026CT 2SA2154CT 2SC6026CT 2SA2154CT | |
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 Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.4 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 1 0.8 ± 0.05 1.2 ± 0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)  | 
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2SA2154MFV 2SC6026MFV | |
2SA2154MFV
Abstract: 2SC6026MFV 
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2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV | |
missile guidance ic
Abstract: 2SA2154 2SC6026 
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2SC6026 2SA2154 missile guidance ic 2SA2154 2SC6026 | |
2SC6026
Abstract: 2SA2154 
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2SA2154 2SC6026 2SC6026 2SA2154 | |
2SA2154
Abstract: 2SC6026 
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2SC6026 2SA2154 2SA2154 2SC6026 | |
2SA2154MFV
Abstract: 2SC6026MFV 2SA21 
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2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV 2SA21 | |
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 Contextual Info: 2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC6026CT General Purpose Amplifier Applications • Unit: mm High voltage and high current 0.6±0.05 0.5±0.03 Complementary to 2SA2154CT 3 2 0.25±0.03 1 Absolute Maximum Ratings (Ta = 25°C)  | 
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2SC6026CT 2SA2154CT | |
transistor marking hy
Abstract: 2SA2154MFV 2SC6026MFV PCT 245 
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2SC6026MFV 2SA2154MFV transistor marking hy 2SA2154MFV 2SC6026MFV PCT 245 | |
2SA2154MFV
Abstract: 2SC6026MFV 
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2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV | |
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2SC6026
Abstract: 2SA2154 2SA21 
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2SC6026 2SA2154 2SC6026 2SA2154 2SA21 | |
2SA2154MFV
Abstract: 2SC6026MFV 
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2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV | |
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 Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120 to 400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity  | 
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2SA2154MFV 2SC6026MFV | |
2SA2154MFV
Abstract: 2SC6026MFV 
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2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV | |
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 Contextual Info: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026  | 
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2SA2154 2SC6026 | |
2SA2154MFV
Abstract: 2SA21 2SC6026MFV 21l1A 2sc602 
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2SA2154MFV 2SC6026MFV 2SA2154MFV 2SA21 2SC6026MFV 21l1A 2sc602 | |
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 Contextual Info: Reliability Tests Report Product Name: 2SC6026CT Package Name: CST3 1. Thermal tests Test Item Heat resistance Reflow Temperature cycling - - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s  | 
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2SC6026CT | |
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 Contextual Info: Reliability Tests Report Product Name: 2SC6026MFV Package Name: VESM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s  | 
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2SC6026MFV | |
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 Contextual Info: 2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026 General-Purpose Amplifier Applications • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154 : VCEO = 50 V, IC = 100 mA (max)  | 
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2SC6026 2SA2154 04esented | |
TAH6N201U
Abstract: TAH8N401K 1SS361CT 1SS387CT 1SS417CT TPD4113K MT3S106 
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TPD4113K/TPD4113AK TPD4113K) 00V/1A TPD4113K 5HZIP23 TAH8N401K TAH6N201U 025mA TAH6N201U TAH8N401K 1SS361CT 1SS387CT 1SS417CT TPD4113K MT3S106 | |