FLL120MK Search Results

FLL120

Contextual Info: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to

L-Band

Contextual Info: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to

FLL120mk

Contextual Info: FLL120MK L-Bcuid Medium & High Power GaAs FETs ABSOLUTE MAXIMUM RATING A m bient Tem perature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 37.5 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature

FLL120MK

Abstract: 100OB FLL120 fujitsu gaas fet
Contextual Info: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P ^ b = 40.0dBm Typ. High Gain: = 10.0dB (Typ.) High PAE: riadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120M K is a Power G aAs FET that is specifically designed to

fll120mk

Abstract: FLL120
Contextual Info: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to

Contextual Info: F L L120M K fU ÎIT S U L-Band Medium & High Power GaAs FETs * FEATURES • • • • • High Output Power: P-idg = 40.0dBm Typ. High Gain: G-j^B = 10.0dB (Typ.) High PAE: riadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to

fll120mk

Contextual Info: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: hadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to

FLL120MK

Abstract: Eudyna Devices
Contextual Info: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to

FLL120MK

Abstract: FLL120 fujitsu gaas fet
Contextual Info: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to

Avago 9886

Abstract: XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes
Contextual Info: M O DE L I T HI CS EXEMPLAR LIBRARY LIBRARY USER MANUAL V11 For Agilent Technologies Advanced Design System MODELITHICS EXEMPLAR LIBRARY CONTENTS CONTENTS . 2 INSTALLATION INSTRUCTIONS . 8

FLL55

Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME
Contextual Info: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.

CD 294

Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package

FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips

FLL57MK

Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.

FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking

FSX52WF

Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of