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FLU10 Datasheets (4)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FLU10XM		Eudyna Devices	L-Band Medium & High Power GaAs FET	Original	PDF	78.2KB	4
FLU10XM-E1		Fujitsu	FET: P Channel: ID 0.45 A	Original	PDF	78.05KB	4
FLU10ZM		Eudyna Devices	L-Band Medium & High Power GaAs FET	Original	PDF	235.94KB	8
FLU10ZM-E1		Fujitsu		Original	PDF	227.48KB	8

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SMC Corporation of America


SMC Corporation of America JJ5SY5-H11L105-10B-02FL-U-10A MANIFOLD, LEAD WIRE TYPE, 10 STATION, JSY SERIES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	JJ5SY5-H11L105-10B-02FL-U-10A	Bulk		5 Weeks	1	1 $2234.43 10 $2234.43 100 $2234.43 1000 $2234.43 10000 $2234.43	Get Quote
SMC Corporation of America JJ5SY5-H11L105-12B-02FL-U-10A2J MANIFOLD, LEAD WIRE TYPE, 12 STATION, JSY SERIES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	JJ5SY5-H11L105-12B-02FL-U-10A2J	Bulk		5 Weeks	1	1 $2467.08 10 $2467.08 100 $2467.08 1000 $2467.08 10000 $2467.08	Get Quote

FLU10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: hadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the	Original	flu10xm fcsi0598m200	PDF
FLU10XM Contextual Info: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the	Original	flu10xm v4888	PDF
FLU10XM Contextual Info: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the	Original	flu10xm fcsi0598m200	PDF
Contextual Info: FLU10ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=29.5dBm typ. ・High Gain: G1dB=13.0dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU10ZM is a GaAs FET designed for base station and CPE	Original	flu10zm	PDF
FLU10 Abstract: fujitsu flu fujitsu gaas fet L-band pae100 Contextual Info: FLU10ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=29.5dBm typ. ・High Gain: G1dB=13.0dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU10ZM is a GaAs FET designed for base station and CPE	Original	flu10zm fcsi0202m200 flu10 fujitsu flu +2fujitsu gaas fet l-band pae100	PDF
Contextual Info: FLU10XM L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: hadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the	Original	flu10xm	PDF
FLU10XM Contextual Info: FLU10XM _ L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P-\|C\|g=29.5dBnn Typ. High Gain: G-\|C\|g=14.5dB (Typ.) High PAE: riadd=47% (Typ.) Hermetic Metal/Ceramic (SMT) Package Tape and Reel Available	OCR Scan	flu10xm fcsi0598m200	PDF
Contextual Info: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the	Original	flu10xm fcsi0598m200	PDF
Contextual Info: FLU10ZME1 L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=29.5dBm typ. High Gain: G1dB=13.0dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available DESCRIPTION The FLU10ZME1 is a GaAs FET designed for base station and CPE application up to a 3.0GHz frequency range. This is a new product	Original	flu10zme1 25deg	PDF
Contextual Info: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the	Original	flu10xm	PDF
FLU10XM Abstract: FLU10 Contextual Info: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the	Original	flu10xm vgs794 flu10	PDF
FLL105 Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202 Contextual Info: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ	OCR Scan	fll300-1 fll200-1 fll300-2 fll200-3 +10fll200-2 fll120 fll105 fll300-3 flu35 fll55 fll101 fll171 fll-300-1 flk202	PDF
FLL55 Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME Contextual Info: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.	OCR Scan	flu10xm flu17xm flu35xm fll101me +11fll171me fll351me fll55mk fll120mk fll200ib-1 fll200ib-2 fll55 flc253mh-6 fll300ip-2 flu10 fll171	PDF
FLC301XP Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171 Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips	OCR Scan	flc301xp flc301xp equivalent flk052xp fujitsu gaas fet application note +6iss1b1 cs98e1v6r800-k41d cs98e1v6r000-k41b fujitsu "application notes fjs-ds-158 fll171	PDF

MRF947T1 equivalent Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi	Original	2sa1977 2sa1978 2sc2351 2sc3355 +162sc3357 2sc3545 2sc3583 2sc3585 2sc4093 2sc4094 mrf947t1 equivalent mrf947t1 equivalent transistor nj1006 bfp320 fll120mk fll101me mgf4919g fujitsu gaas fet fhx76lp hpma-2086 mmbr521l	PDF
FMC141401-02 Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1 Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking	OCR Scan	fmc141401-02 fujitsu gaas marking code fujitsu k022 fll300-2 +6fll55 fsx52wf fujitsu l101 fujitsu x51 fll200-2 fll300-1	PDF