Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FLL120 Search Results

    FLL120 Datasheets (7)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FLL1200IU-2
    		Eudyna Devices TRANS JFET 15V 5IU Original PDF 268.03KB 4
    FLL1200IU-2
    		Fujitsu FET, P Channel, ID 72 A Original PDF 87.96KB 4
    FLL1200IU-2-E1
    		Fujitsu FET: P Channel: ID 72 A Original PDF 87.95KB 4
    FLL1200IU-3
    		Eudyna Devices L-Band High Power GaAs FET Original PDF 103.52KB 4
    FLL1200IU-3-E1
    		Fujitsu FET: P Channel: ID 48 A Original PDF 382.32KB 4
    FLL120MK
    		Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF 98.24KB 4
    FLL120MK-E1
    		Fujitsu FET: P Channel: ID 6 A Original PDF 98.08KB 4
    SF Impression Pixel

    FLL120 Price and Stock

    Select Manufacturer

    SUMITOMO ELECTRIC Interconnect Products FLL120MK

    TRANSISTOR,MESFET,N-CHAN,15V V(BR)DSS,SOT-437AVAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLL120MK 1
    • 1 $76.05
    • 10 $76.05
    • 100 $76.05
    • 1000 $76.05
    • 10000 $76.05
    		Buy Now

    FUJITSU Limited FLL120MK

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip Stock FLL120MK 395
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Sumitomo Electric Device Innovations Usa FLL120MK

    Transistors
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian FLL120MK 199
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    FUJITSU Semiconductor Limited FLL120MK

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics FLL120MK 270
    • 1 $134.06
    • 10 $116.19
    • 100 $116.19
    • 1000 $116.19
    • 10000 $116.19
    		Buy Now

    FLL120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FLL1200IU-3 - L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation.


    OCR Scan     		FLL1200IU-3 FLL1200IU-3 FCSI0299M200 PDF

    FLL120

    Contextual Info: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		FLL120MK FLL120MK FCSI0598M200 FLL120 PDF

    FLL1200IU-2

    Abstract: Fujitsu GaAs FET Amplifier Fujitsu GaAs FET Amplifier design fujitsu gaas fet
    Contextual Info: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1200IU-2 FLL1200IU-2 FCSI0598M200 Fujitsu GaAs FET Amplifier Fujitsu GaAs FET Amplifier design fujitsu gaas fet PDF

    FLL1200IU-3

    Contextual Info: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1200IU-3 FLL1200IU-3 Powe4888 PDF

    FLL1200IU-2

    Abstract: fujitsu gaas fet L-band Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier fujitsu gaas fet
    Contextual Info: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1200IU-2 FLL1200IU-2 FCSI0598M200 fujitsu gaas fet L-band Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier fujitsu gaas fet PDF

    L-Band

    Contextual Info: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		FLL120MK FLL120MK L-Band PDF

    fujitsu gaas fet

    Abstract: Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier
    Contextual Info: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1200IU-2 FLL1200IU-2 FCSI0598M200 fujitsu gaas fet Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier PDF

    FLL120mk

    Contextual Info: FLL120MK L-Bcuid Medium & High Power GaAs FETs ABSOLUTE MAXIMUM RATING A m bient Tem perature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 37.5 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature


    OCR Scan     		FLL120MK Volt939 FLL120mk PDF

    FLL120MK

    Abstract: 100OB FLL120 fujitsu gaas fet
    Contextual Info: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P ^ b = 40.0dBm Typ. High Gain: = 10.0dB (Typ.) High PAE: riadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120M K is a Power G aAs FET that is specifically designed to


    OCR Scan     		FLL120MK FLL120MK FCSI0598M200 100OB FLL120 fujitsu gaas fet PDF

    fll120mk

    Abstract: FLL120
    Contextual Info: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		FLL120MK FLL120MK FLL120 PDF

    Contextual Info: FI FLL12001U-2 *" L-Band Medium & High Power GaAs FETs . ^ FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. High PAE: 44%. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    OCR Scan     		FLL12001U-2 FLL1200IU-2 FLL1200IU-2 PDF

    Contextual Info: FLL1200IU-2A L-Band Medium & High Power GaAs FETs f u j Ît s u FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2000 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2A is a 120 Watt GaAs FET that employs a push-pull design that


    OCR Scan     		FLL1200IU-2A FLL1200IU-2A IMT-2000 PDF

    Contextual Info: F L L120M K fU ÎIT S U L-Band Medium & High Power GaAs FETs * FEATURES • • • • • High Output Power: P-idg = 40.0dBm Typ. High Gain: G-j^B = 10.0dB (Typ.) High PAE: riadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    OCR Scan     		L120M FLL120MK 2200mA LL120M PDF

    fll120mk

    Contextual Info: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: hadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		FLL120MK FLL120MK FCSI0598M200 PDF

    FLL1200IU-2

    Contextual Info: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1200IU-2 FLL1200IU-2 t4888 PDF

    Eudyna Devices power amplifiers

    Abstract: eudyna GaAs FET Amplifier FLL1200IU-2 Eudyna high power
    Contextual Info: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1200IU-2 FLL1200IU-2 t4888 Eudyna Devices power amplifiers eudyna GaAs FET Amplifier Eudyna high power PDF

    FLL1200IU-2

    Contextual Info: FLL1200IU-2 - L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation.


    OCR Scan     		FLL1200IU-2 FLL1200IU-2 FCSI0598M200 PDF

    FLL120

    Abstract: 288a FLL1200IU-2
    Contextual Info: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1200IU-2 FLL1200IU-2 the44 12-R0 FLL120 288a PDF

    FLL120MK

    Abstract: FLL120 fujitsu gaas fet
    Contextual Info: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		FLL120MK FLL120MK FCSI0598M200 FLL120 fujitsu gaas fet PDF

    FLL120

    Contextual Info: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1200IU-3 FLL1200IU-3 FCSI0299M200 FLL120 PDF

    2500 watt amplifier

    Contextual Info: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1200IU-3 FLL1200IU-3 12-R0 2500 watt amplifier PDF

    Fujitsu GaAs FET Amplifier design

    Abstract: Fujitsu GaAs FET Amplifier FLL1200IU-3
    Contextual Info: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1200IU-3 FLL1200IU-3 FCSI0299M200 Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier PDF

    FLL1200IU-3

    Abstract: fll120
    Contextual Info: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1200IU-3 FLL1200IU-3 Powe4888 fll120 PDF

    fujitsu power amplifier GHz

    Abstract: FLL1200IU-3
    Contextual Info: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1200IU-3 FLL1200IU-3 FCSI0299M200 fujitsu power amplifier GHz PDF