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    FLL120 Search Results

    FLL120 Datasheets (7)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FLL1200IU-2
    		Eudyna Devices TRANS JFET 15V 5IU Original PDF 268.03KB 4
    FLL1200IU-2
    		Fujitsu FET, P Channel, ID 72 A Original PDF 87.96KB 4
    FLL1200IU-2-E1
    		Fujitsu FET: P Channel: ID 72 A Original PDF 87.95KB 4
    FLL1200IU-3
    		Eudyna Devices L-Band High Power GaAs FET Original PDF 103.52KB 4
    FLL1200IU-3-E1
    		Fujitsu FET: P Channel: ID 48 A Original PDF 382.32KB 4
    FLL120MK
    		Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF 98.24KB 4
    FLL120MK-E1
    		Fujitsu FET: P Channel: ID 6 A Original PDF 98.08KB 4
    SF Impression Pixel

    FLL120 Price and Stock

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    FUJITSU Limited FLL1200IU-2

    GAAS FET, 120W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLL1200IU-2 5
    • 1 $44.59
    • 10 $44.59
    • 100 $44.59
    • 1000 $44.59
    • 10000 $44.59
    		Buy Now

    SUMITOMO ELECTRIC Interconnect Products FLL120MK

    TRANSISTOR,MESFET,N-CHAN,15V V(BR)DSS,SOT-437AVAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLL120MK 1
    • 1 $76.05
    • 10 $76.05
    • 100 $76.05
    • 1000 $76.05
    • 10000 $76.05
    		Buy Now

    FUJITSU Semiconductor Limited FLL120MK

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics FLL120MK 60
    • 1 $503.18
    • 10 $503.18
    • 100 $503.18
    • 1000 $503.18
    • 10000 $503.18
    		Buy Now

    FLL120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FLL1200IU-3 - L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation.


    OCR Scan     		fll1200iu-3fcsi0299m200 PDF

    FLL120

    Contextual Info: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		fll120mkfcsi0598m200fll120 PDF

    FLL1200IU-2

    Abstract: Fujitsu GaAs FET Amplifier Fujitsu GaAs FET Amplifier design fujitsu gaas fet
    Contextual Info: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		fll1200iu-2fcsi0598m200fujitsu gaas fet amplifierfujitsu gaas fet amplifier design+1fujitsu gaas fet PDF

    FLL1200IU-3

    Contextual Info: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		fll1200iu-3powe4888 PDF

    FLL1200IU-2

    Abstract: fujitsu gaas fet L-band Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier fujitsu gaas fet
    Contextual Info: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		fll1200iu-2fcsi0598m200fujitsu gaas fet l-bandfujitsu gaas fet amplifier design+2fujitsu gaas fet amplifierfujitsu gaas fet PDF

    L-Band

    Contextual Info: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		fll120mkl-band PDF

    fujitsu gaas fet

    Abstract: Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier
    Contextual Info: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		fll1200iu-2fcsi0598m200fujitsu gaas fetfujitsu gaas fet amplifier design+1fujitsu gaas fet amplifier PDF

    FLL120mk

    Contextual Info: FLL120MK L-Bcuid Medium & High Power GaAs FETs ABSOLUTE MAXIMUM RATING A m bient Tem perature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 37.5 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature


    OCR Scan     		fll120mkvolt939 PDF

    FLL120MK

    Abstract: 100OB FLL120 fujitsu gaas fet
    Contextual Info: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P ^ b = 40.0dBm Typ. High Gain: = 10.0dB (Typ.) High PAE: riadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120M K is a Power G aAs FET that is specifically designed to


    OCR Scan     		fll120mkfcsi0598m200100obfll120+1fujitsu gaas fet PDF

    fll120mk

    Abstract: FLL120
    Contextual Info: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		fll120mkfll120 PDF

    Contextual Info: FI FLL12001U-2 *" L-Band Medium & High Power GaAs FETs . ^ FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. High PAE: 44%. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    OCR Scan     		fll12001u-2fll1200iu-2 PDF

    Contextual Info: FLL1200IU-2A L-Band Medium & High Power GaAs FETs f u j Ît s u FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2000 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2A is a 120 Watt GaAs FET that employs a push-pull design that


    OCR Scan     		fll1200iu-2aimt-2000 PDF

    Contextual Info: F L L120M K fU ÎIT S U L-Band Medium & High Power GaAs FETs * FEATURES • • • • • High Output Power: P-idg = 40.0dBm Typ. High Gain: G-j^B = 10.0dB (Typ.) High PAE: riadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    OCR Scan     		l120mfll120mk2200mall120m PDF

    fll120mk

    Contextual Info: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: hadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		fll120mkfcsi0598m200 PDF

    FLL1200IU-2

    Contextual Info: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		fll1200iu-2t4888 PDF

    Eudyna Devices power amplifiers

    Abstract: eudyna GaAs FET Amplifier FLL1200IU-2 Eudyna high power
    Contextual Info: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		fll1200iu-2t4888eudyna devices power amplifierseudyna gaas fet amplifier+1eudyna high power PDF

    FLL1200IU-2

    Contextual Info: FLL1200IU-2 - L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation.


    OCR Scan     		fll1200iu-2fcsi0598m200 PDF

    FLL120

    Abstract: 288a FLL1200IU-2
    Contextual Info: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		fll1200iu-2the4412-r0fll120+1288a PDF

    FLL120MK

    Abstract: FLL120 fujitsu gaas fet
    Contextual Info: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		fll120mkfcsi0598m200fll120fujitsu gaas fet PDF

    FLL120

    Contextual Info: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		fll1200iu-3fcsi0299m200fll120 PDF

    2500 watt amplifier

    Contextual Info: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		fll1200iu-312-r02500 watt amplifier PDF

    Fujitsu GaAs FET Amplifier design

    Abstract: Fujitsu GaAs FET Amplifier FLL1200IU-3
    Contextual Info: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		fll1200iu-3fcsi0299m200fujitsu gaas fet amplifier designfujitsu gaas fet amplifier PDF

    FLL1200IU-3

    Abstract: fll120
    Contextual Info: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		fll1200iu-3powe4888fll120 PDF

    fujitsu power amplifier GHz

    Abstract: FLL1200IU-3
    Contextual Info: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		fll1200iu-3fcsi0299m200fujitsu power amplifier ghz PDF