FLL55
Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME
Contextual Info: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.
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flu10xmflu17xmflu35xmfll101me+11fll171mefll351mefll55mkfll120mkfll200ib-1fll200ib-2fll55flc253mh-6fll300ip-2flu10fll171
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FLL101ME
Abstract: FLL101
Contextual Info: FLL101ME L-Band Medium & High Power GaAs FETs FEATURES • • • • • High Output Power: P1dB=29.5dBm Typ. High Gain: G1dB=13.5dB (Typ.) High PAE: hadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL101ME is a Power GaAs FET that is specifically designed to
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fll101meit035fll101 |
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2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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f2002f2003f20042sc3355 spice model+9transistor c2003c319bmgf1412rf transistor 10ghzmrf134 rf model .lib file2sk571mgf1402mrf9331pb_hp_at41411_19921101
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FLL105
Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
Contextual Info: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ
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fll300-1fll200-1fll300-2fll200-3+10fll200-2fll120fll105fll300-3flu35fll55fll101fll171fll-300-1flk202
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FZK101
Abstract: FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001
Contextual Info: HANDBOOK OF INTESBATEI CIRCUITS in EQUIVALENTS AND SUBSTITUTES A lthough every care is taken with the preparation of this book, the publishers will not be responsible for any errors that might occur. I.S.B.N. 0 900162 35 X 1974 by Bernard B. Babani First Published 1974
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grou19cn127-128-638zn220-320cn131-132-642+16zn221-321cn133-134-644zn248-348cn135-136-646zn222-322cn121-122-682fzk101fzk105upd101snf10sn76131taa700fzh111fzj101mfc8010mfc8001
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FLL101ME
Abstract: FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C
Contextual Info: - 134 - f =£ m % tt % s & m % ±m FLK202MH-14 FLK202XV ıiS FLLIOME ^ 2Ê! fë S P d/P c h % K FIK102XV I K ti !í 13=25*0 t st (V) * ft (A) (V) ft * Ig s s (max) (A) m Vg s (V) (min) (max) Vps (A) (A) (V) (min) (max) Vd s (V) (V) (V) Id (A) (min)
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flk202mh-14flk202xvfll10mefll17mb+15fll35megalm1011-8dflm1112-4cflm1213-4cflm1213-4dflm1213-8cfll101mefll100mkfll171meflm1414-4cfll171flm0910-8cflk202mh-14 paflm1011-4cflm0910-4c
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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flc301xpflc301xp equivalentflk052xpfujitsu gaas fet application note+6iss1b1cs98e1v6r800-k41dcs98e1v6r000-k41bfujitsu "application notesfjs-ds-158fll171
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FLL101ME
Contextual Info: FLLIOIME m ir r c ii r UJ11jU L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P1c|B=29.5dBnn Typ. • • • • High Gain: G-|C|b = 13-5cIB (Typ) High PAE: riadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION
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MRF947T1 equivalent
Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi
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2sa19772sa19782sc23512sc3355+162sc33572sc35452sc35832sc35852sc40932sc4094mrf947t1 equivalentmrf947t1 equivalent transistornj1006bfp320fll120mkfll101memgf4919gfujitsu gaas fet fhx76lphpma-2086mmbr521l
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K155LE1
Abstract: K155LA8 K155AG3 K155LA3 K155LP5 K155AG1 K155TM2 K155KP2 k155tl2 K155TL1
Contextual Info: Table of Equivalent TTL-IC Values [This table is reprinted from the December 1985 RadioAmater, the journal of the Yugoslavia Amateur Radio Society.— Ed.] NATIONAL SEMICOND NEC RFT USSR FAIRCHILD SIEMENS PHILIPS DM8000N ftPB201 D110C K155LA3 FJH131 FLH101
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sn7400nf9n00pcfjh131flh101+15dm8000nftpb201d110ck155la3sn7401nf9n01pck155le1k155la8k155ag3k155lp5k155ag1k155tm2k155kp2k155tl2k155tl1
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FMC141401-02
Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking
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FSX52WF
Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of
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flx202mh-12flk202mh-14fsx52wffujitsu "application notes+8fsx51wfnf037fmc141401-02fll101fll171fmc1414p1-02fll55fll120mk
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