FLU35 Search Results

Contextual Info: FLU35XM L-Band Medium & High Power GaAs I l l s ABSOLUTE MAXIMUM RATINGS Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 15 w °c °c Total Power Dissipation Tc = 25°C PT Storage Temperature

FLU35XM

Abstract: FUJITSU GaAs FET
Contextual Info: FLU35XM _ L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P-|C|g=35.5dBnn Typ. • High Gain: G-|C|g=12.5dB (Typ.) • High PAE: riadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available

FLU35XM

Abstract: Eudyna Devices
Contextual Info: FLU35XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=35.5dBm Typ. • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the

high power FET transistor s-parameters

Abstract: ED-4701 FLU35ZM High Power GaAs FET
Contextual Info: FLU35ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=35.5dBm typ. ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU35ZM is a GaAs FET designed for base station and CPE

fujitsu flu

Abstract: fujitsu gaas fet L-band
Contextual Info: FLU35ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=35.5dBm typ. ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU35ZM is a GaAs FET designed for base station and CPE

101S12

Abstract: FLU35ZME1
Contextual Info: FLU35ZME1 L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=35.5dBm typ. ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU35ZME1 is a GaAs FET designed for base station and CPE

FLU35XM

Contextual Info: FLU35XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=35.5dBm Typ. • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the

Contextual Info: FLU35XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=35.5dBm Typ. • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the

Contextual Info: FLU35ZME1 L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=35.5dBm typ. High Gain: G1dB=11.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available DESCRIPTION The FLU35ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product

Contextual Info: FLU35XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=35.5dBm Typ. • High Gain: G1dB=12.5dB (Typ.) • High PAE: hadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the

FLU35XM

Contextual Info: FLU35XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=35.5dBm Typ. • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the

MDU1-50-3AD

Contextual Info: 50-60W OPEN-FRAME SWITCHING POWER SUPPLIES • • • • • • • • • Single, Dual and Triple Output Models Models with Universal AC Input or DC Input CE Mark: UL/CSA/EN60950 Approvals Models to UL544/CSA C22.2-601/EN60-601 Medical Safety Standards

FLU-150

Abstract: FLU3-50 FLU1-60-1AD FLU1-60 26-60-4060 50-60W R9171
Contextual Info: 50-60W OPEN-FRAME SWITCHING POWER SUPPLIES ✔ Single and Triple Output Models ✔ Universal AC Input ✔ CE Mark: UL/CSA/EN60950 Approvals ✔ EN55022/FCC Class B Input Line Filters ✔ 0% Minimum Load Requirement ✔ Over-Current/Short-Circuit Protection

FLL105

Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
Contextual Info: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ

FLU-150

Abstract: FLU3-50 FLU1-60 FLU3 43061-0006 50-60W FLU1-60-1AD 505AD canton AS 60 LR52335
Contextual Info: 50-60W OPEN-FRAME SWITCHING POWER SUPPLIES ✔ Single and Triple Output Models ✔ Universal AC Input ✔ CE Mark: UL/CSA/EN60950 Approvals ✔ EN55022/FCC Class B Input Line Filters ✔ 0% Minimum Load Requirement ✔ Over-Current/Short-Circuit Protection

FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips

GaAs FETs

Contextual Info: F L U 35X M p. . f j U . . J L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P-| ^13=35.5dBm Typ. • High Gain: G-|^13=12.5dB (Typ.) • High PAE: riadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available

FLL57MK

Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.

FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking