FLL55MK
Abstract: FLL55 TH 2267
Contextual Info: F|.fjVç-. FLL55MK J L-Band Medium & High Power GaAs FETs FEATURES • • • • • High Output Power: P-idg = 36.0dBm Typ. High Gain: G-j^B = 11.5dB (Typ.) High PAE: riadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL55MK is a Power GaAs FET that is specifically designed to
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FLL55
Abstract: FLL55MK fujitsu l-band power fets fujitsu gaas fet L-band fujitsu databook
Contextual Info: FLL55MK L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P ^ b = 36.0dBm Typ. • • • • High Gain: G-|dB = 11 -5clB (TyP) High PAE: riadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL55MK is a Power GaAs FET that is specifically designed to
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FLL55
Abstract: 4030p
Contextual Info: FLL55MK L-Band Medium & High Power GaAs / /:7 s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 21.4 w Total Power Dissipation pt Tc = 25°C Storage Temperature
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FLL105
Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
Contextual Info: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ
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FLL55
Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME
Contextual Info: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.
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FLL55
Abstract: FLL100
Contextual Info: FILTERS LOW PASS L ea b l e s s S urf ac e M o u n t M. o d e l s -. ^ L o w C ose Fc MHz LOSS = 3 dB (Nom) PASSBAND LOSS < 1 dB (MHz) >35 dB >23 dB 12 24 33 DC-10.7 DC-21.4 DC-30 21 42 58 19 37 51 55 66 77 100 154 DC-50 DC-60 DC-70 DC-92 DC-140 96 115
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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flc301xpflc301xp equivalentflk052xpfujitsu gaas fet application note+6iss1b1cs98e1v6r800-k41dcs98e1v6r000-k41bfujitsu "application notesfjs-ds-158fll171
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FLL55
Abstract: FLL100 FLS-330 FLL15 fll57 FLL-770
Contextual Info: FILTERS LOW PASS L e a d í .,e s s S u /tF A C fì-iM o i's r M o n t i ,.v i j w C ost Fc MHz) LOSS = 3 dB (Nom) PASSBAND LOSS < 1 dB (MHz) >35 dB >23 dB 12 24 33 DC-10.7 DC-21.4 DC-30 21 42 58 19 37 51 55; 66 77 100 154 DC-50 DC-60 DC-70 DC-92 DC-140
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FMC141401-02
Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking
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FSX52WF
Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of
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