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    FLL171ME Search Results

    FLL171ME Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FLL171ME
    		Unknown High Frequency Device Data Book (Japanese) Scan PDF 47.68KB 1
    FLL171ME
    		Unknown FET Data Book Scan PDF 100.7KB 2
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    FLL171ME Price and Stock

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    FUJITSU Limited FLL171ME

    TRANSISTOR,MESFET,N-CHAN,15V V(BR)DSS,SOT-437AVAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLL171ME 80
    • 1 $56.00
    • 10 $56.00
    • 100 $44.80
    • 1000 $44.80
    • 10000 $44.80
    		Buy Now

    FUJITSU Semiconductor Limited FLL171ME

    TRANSISTOR,MESFET,N-CHAN,15V V(BR)DSS,SOT-437AVAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLL171ME 12
    • 1 $83.77
    • 10 $75.39
    • 100 $75.39
    • 1000 $75.39
    • 10000 $75.39
    		Buy Now

    FLL171ME Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    fujitsu l-band power fets

    Contextual Info: Filinoli J FLL17IME L-Band Medium & High Power GaAs FETs FEATURES • • • • • High Output Power: P1c|B=32.5dBnn Typ. High Gain: G-|C|g=12.5dB (Typ.) High PAE: riadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL171ME is a Power GaAs FET that is specifically designed to


    OCR Scan     		fll17imefll171mefujitsu l-band power fets PDF

    FLL55

    Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME
    Contextual Info: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.


    OCR Scan     		flu10xmflu17xmflu35xmfll101me+11fll171mefll351mefll55mkfll120mkfll200ib-1fll200ib-2fll55flc253mh-6fll300ip-2flu10fll171 PDF

    FLL171ME

    Abstract: fll171 fujitsu l-band power fets
    Contextual Info: FLL171ME FIIMTCII L-Band Medium & High Power GaAs FETs \ FEATURES • • • • • High Output Power: P-| ^13=32.5dBm Typ. High Gain: G-|dB=12.5dB (Typ.) High PAE: riadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL171 ME is a Power GaAs FET that is specifically designed to


    OCR Scan     		fll171mefll171fujitsu l-band power fets PDF

    FLL101ME

    Abstract: FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C
    Contextual Info: - 134 - f =£ m % tt % s & m % ±m FLK202MH-14 FLK202XV ıiS FLLIOME ^ 2Ê! fë S P d/P c h % K FIK102XV I K ti !í 13=25*0 t st (V) * ft (A) (V) ft * Ig s s (max) (A) m Vg s (V) (min) (max) Vps (A) (A) (V) (min) (max) Vd s (V) (V) (V) Id (A) (min)


    OCR Scan     		flk202mh-14flk202xvfll10mefll17mb+15fll35megalm1011-8dflm1112-4cflm1213-4cflm1213-4dflm1213-8cfll101mefll100mkfll171meflm1414-4cfll171flm0910-8cflk202mh-14 paflm1011-4cflm0910-4c PDF

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


    OCR Scan     		flc301xpflc301xp equivalentflk052xpfujitsu gaas fet application note+6iss1b1cs98e1v6r800-k41dcs98e1v6r000-k41bfujitsu "application notesfjs-ds-158fll171 PDF

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		2sa19772sa19782sc23512sc3355+162sc33572sc35452sc35832sc35852sc40932sc4094mrf947t1 equivalentmrf947t1 equivalent transistornj1006bfp320fll120mkfll101memgf4919gfujitsu gaas fet fhx76lphpma-2086mmbr521l PDF

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan     		fmc141401-02fujitsu gaas marking codefujitsu k022fll300-2+6fll55fsx52wffujitsu l101fujitsu x51fll200-2fll300-1 PDF

    FSX52WF

    Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
    Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of


    OCR Scan     		flx202mh-12flk202mh-14fsx52wffujitsu "application notes+8fsx51wfnf037fmc141401-02fll101fll171fmc1414p1-02fll55fll120mk PDF