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    FLL57 Search Results

    FLL57 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FLL57MK
    Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF 98.01KB 4
    SF Impression Pixel

    FLL57 Price and Stock

    Sumitomo Electric Device Innovations Usa

    Sumitomo Electric Device Innovations Usa FLL57MK

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    Vyrian FLL57MK 1,165
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    FLL57 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    fll57

    Abstract: FLL57MK
    Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to


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    FLL57MK FLL57MK Un4888 fll57 PDF

    0.1 j100

    Abstract: FLL57MK fll57
    Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to


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    FLL57MK FLL57MK 0.1 j100 fll57 PDF

    FLL57MK

    Abstract: fll57 fujitsu gaas fet L-band fujitsu gaas fet
    Contextual Info: FLL57MK _ L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P ^ b = 36.0dBm Typ. High Gain: = 11.5dB (Typ.) High PAE: riadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION


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    FLL57MK FLL57MK FCSI0598M200 fll57 fujitsu gaas fet L-band fujitsu gaas fet PDF

    FLL57MK

    Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to


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    FLL57MK FLL57MK PDF

    fll57

    Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: hadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to


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    FLL57MK FLL57MK FCSI0598M200 fll57 PDF

    FLL57MK

    Abstract: fll57 01 j100
    Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to


    Original
    FLL57MK FLL57MK FCSI0598M200 fll57 01 j100 PDF

    Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to


    Original
    FLL57MK FLL57MK FCSI0598M200 PDF

    fll57

    Contextual Info: Data Sheet October 1997 microelectronics group Lucent Technologies Bell Labs Innovations T7901 ISA Single Wide Area Connection ISA-SWAC Device Features • One wide area connection port that can be config­ ured as a basic rate ISDN TE or NT or as a syn­


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    T7901 SN74LS32) SN74LS04) T7901. 5002b 002fl25b theT7901 CY7C199. SN74LS174 fll57 PDF

    FLL55

    Abstract: FLL100
    Contextual Info: FILTERS LOW PASS L ea b l e s s S urf ac e M o u n t M. o d e l s -. ^ L o w C ose Fc MHz LOSS = 3 dB (Nom) PASSBAND LOSS < 1 dB (MHz) >35 dB >23 dB 12 24 33 DC-10.7 DC-21.4 DC-30 21 42 58 19 37 51 55 66 77 100 154 DC-50 DC-60 DC-70 DC-92 DC-140 96 115


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    DC-10 DC-21 DC-30 DC-50 DC-60 DC-70 DC-92 DC-140 DC-200 DC-300 FLL55 FLL100 PDF

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


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    FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet PDF

    FLL55

    Abstract: FLL100 FLS-330 FLL15 fll57 FLL-770
    Contextual Info: FILTERS LOW PASS L e a d í .,e s s S u /tF A C fì-iM o i's r M o n t i ,.v i j w C ost Fc MHz) LOSS = 3 dB (Nom) PASSBAND LOSS < 1 dB (MHz) >35 dB >23 dB 12 24 33 DC-10.7 DC-21.4 DC-30 21 42 58 19 37 51 55; 66 77 100 154 DC-50 DC-60 DC-70 DC-92 DC-140


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    DC-10 DC-21 DC-30 DC-50 DC-60 DC-70 DC-92 DC-140 DC-200 DC-300 FLL55 FLL100 FLS-330 FLL15 fll57 FLL-770 PDF

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


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    FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME PDF