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FLL400IP2 Datasheets (1)

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Eudyna Devices

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FLL400IP-2		Eudyna Devices	L-Band Medium & High Power GaAs FET	Original	PDF	112.58KB	4

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FUJITSU Limited


FUJITSU Limited FLL400IP-2 L BAND, GAAS, N-CHANNEL, RF POWER, JFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FLL400IP-2		4			1 $300.00 10 $280.00 100 $280.00 1000 $280.00 10000 $280.00	Buy Now

FLL400IP2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FLL400IP-2 Abstract: C4727 fujitsu gaas fet "class AB Linear" 50mhz Contextual Info: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V	Original	fll400ip-2 fcsi0799m200 c4727 fujitsu gaas fet +1class ab linear" 50mhz	PDF
Contextual Info: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V	Original	fll400ip-2 fcsi0799m200	PDF
GSC371BAL2000 Abstract: Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W FLL400IP-2 gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band Contextual Info: FUJITSU APPLICATION NOTE - No 002 1930MHz - 1990 MHz PCS BASE STATION APPLICATIONS 40 Watt Push-Pull Amplifier using the FLL400IP-2 GaAs FET FEATURES • Meets CDMA ACP at Pout>8W • Easy tuning for Power, IM3 or CDMA ACP • Over 40 W P1dB over entire PCS band	Original	1930mhz fll400ip-2 1930-1990mhz 720ma +1096ghz gsc371bal2000 fujitsu gaas fet application note gsc371-bal2000 12v class d amplifier 40w gaas fet vhf uhf gsc371 soshin ro3010 fujitsu rf power amplifier l band	PDF
CD 294 Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-\|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package	OCR Scan	flc167wf fcsi0598m200 cd 294 fll357 +8348db fll400ip-2 flk102mh-14 hemt low noise die fujitsu gaas fet amplifier flk017xp fll120 fujitsu gaas fet	PDF
Contextual Info: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V	Original	fll400ip-2 fcsi0799m200	PDF
FLL400IP-2 Contextual Info: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V	Original	fll400ip-2 fcsi0799m200	PDF
Eudyna Devices power amplifiers Contextual Info: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V	Original	fll400ip-2 eudyna devices power amplifiers	PDF
FLL400IP2 Abstract: FLL400IP-2 720n Contextual Info: j» FLL400IP-2 L-Band Medium & High Power GaAs FET s r U J11 j U FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V	OCR Scan	fll400ip-2 fll400ip2 720n	PDF
FLL57MK Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.	Original	fll810iq-4c fll600iq-2 fll400ip-2 fll300il-1 +14fll200ib-1 fll300il-2 fll200ib-2 fll300il-3 fll200ib-3 fll57mk elm7785-60f fll400ip2 flc107 flk027wg flc057wg fll357 fll177 fll357me	PDF
Eudyna Devices power amplifiers Abstract: C4727 FLL400IP-2 eudyna GaAs FET Amplifier Contextual Info: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V	Original	fll400ip-2 eudyna devices power amplifiers c4727 eudyna gaas fet amplifier	PDF
C4727 Abstract: FLL400IP-2 eudyna GaAs FET Amplifier Contextual Info: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V	Original	fll400ip-2 96ghz c4727 eudyna gaas fet amplifier	PDF