FLC107 Search Results

fujitsu gaas fet

Abstract: FLC107WG
Contextual Info: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general

fujitsu gaas fet

Abstract: FLC107WG
Contextual Info: FLC107WG - C-Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 8.0dB(Typ.) High PAE: riadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package

Contextual Info: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general

fujitsu gaas fet

Abstract: FLC107WG
Contextual Info: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general

Contextual Info: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: hadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general

FLC107WG

Contextual Info: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general

C-Band Power GaAs FET

Abstract: FLC107WG
Contextual Info: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general

flc107

Contextual Info: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general

Contextual Info: OM1575 Series OMH1575 Series STEP-DOWN SWITCHING VOLTAGE REGULATOR IN HERMETIC ISOLATED PACKAGE 1.0 Am p, 5V, 12V, 15V And A djustable Output Voltage Versions In M Q-078 Metal Package FEATURES Similar To Industry Standard LM 1575 Available in 5V, 12V, 15V, And Adjustable Versions

schottky diode 43t

Abstract: adjustable regulated power supply o to 30 volt adjustable regulated power supply o to 12 volt 0G01575 LM1575 adjustable regulated power supply o to 100 volt fc16c
Contextual Info: OM1575 Series OMH1575 Series STEP-DOWN SWITCHING VOLTAGE REGULATOR IN HERMETIC ISOLATED PACKAGE FEATURES • • • • • • • Similar To Industry Standard LM 1575 Available in 5V, 12V, 15V, And Adjustable Versions 1.0 Amp Output W ide Input Voltage Range, 4 V to 60V

FLL57MK

Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.