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FLL357 Datasheets (1)

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Eudyna Devices

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FLL357ME		Eudyna Devices	L-Band Medium & High Power GaAs FET	Original	PDF	79.01KB	4

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SUMITOMO ELECTRIC Interconnect Products FLL357ME IN STOCK SHIP TODAY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Component Electronics, Inc	FLL357ME		60			1 $615.38 10 $615.38 100 $461.54 1000 $400.00 10000 $400.00	Buy Now
FUJITSU Semiconductor Limited FLL357ME Trans JFET 10V 720mA GaAs Case ME
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	FLL357ME		230			1 $321.55 10 $288.29 100 $288.29 1000 $288.29 10000 $288.29	Buy Now

FLL357 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FLL357ME Abstract: FLL357 fujitsu gaas fet Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to	Original	fll357me fcsi0598m200 fll357 fujitsu gaas fet	PDF
FLL357ME Abstract: L-Band Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to	Original	fll357me l-band	PDF
FLL357ME Abstract: High Power GaAs FET Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to	Original	fll357me temperat4888 high power gaas fet	PDF
FLL357 Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: hadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to	Original	fll357me fcsi0598m200 fll357	PDF
FLL357ME Abstract: fujitsu gaas fet L-band Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to	Original	fll357me fcsi0598m200 fujitsu gaas fet l-band	PDF
Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to	Original	fll357me	PDF
FLL357ME Abstract: FLL357 Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to	Original	fll357me temperatur4000 fll357	PDF
FLL357ME Abstract: fujitsu gaas fet Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P-\|C\|g=35.5dBnn Typ. High Gain: G-\|C\|g=11.5dB (Typ.) High PAE: riadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to	OCR Scan	fll357me fcsi0598m200 fujitsu gaas fet	PDF
CD 294 Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-\|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package	OCR Scan	flc167wf fcsi0598m200 cd 294 fll357 +8348db fll400ip-2 flk102mh-14 hemt low noise die fujitsu gaas fet amplifier flk017xp fll120 fujitsu gaas fet	PDF
FLL57MK Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.	Original	fll810iq-4c fll600iq-2 fll400ip-2 fll300il-1 +14fll200ib-1 fll300il-2 fll200ib-2 fll300il-3 fll200ib-3 fll57mk elm7785-60f fll400ip2 flc107 flk027wg flc057wg fll357 fll177 fll357me	PDF