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    IT035 Search Results

    IT035 Datasheets (1)

    Wilcoxon Sensing Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IT035
    Wilcoxon Sensing Technologies 5-POS CBL CONN TBUS DIRECT Original PDF 329.1KB
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    Amphenol Corporation IT035

    Fixed Terminal Blocks 5-position cable connector for TBUS direct connection, female plug, cable comes in right side vertically
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    DFRobot FIT0356

    DFRobot Accessories Digital RGB LED 1m Weatherproof Strip60
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    Newark FIT0356 Bulk 29 1
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    DFRobot FIT0351-OE

    DFRobot Accessories Magnet Micro USB Cable 1.2M
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    DFRobot FIT0355

    DFRobot Accessories 315MHz ASK Wireless Remote Keyfob (Metal)
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    DFRobot FIT0352

    DFRobot Accessories Digital RGB LED Strip (3m, 180 LEDs, Weatherproof, WS2811)
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    IT035 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MCH3307

    Abstract: SBS004 ENN8235 2171A
    Contextual Info: CPH5838 Ordering number : ENN8235 CPH5838 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converters. Composite type with a P-Channel Sillicon MOSFET MCH3307 and a Schottky Barrier Diode (SBS004)


    Original
    cph5838enn8235mch3307sbs004+12171a PDF

    2SC5778

    Contextual Info: Ordering number : ENN6992 2SC5778 NPN Triple Diffused Planar Silicon Transistor 2SC5778 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2174A [2SC5778] 5.6 3.4 16.0 3.1 0.8 21.0


    Original
    enn69922sc5778 PDF

    2SC2812

    Abstract: 2SK1740 FC21 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965
    Contextual Info: Ordering number : ENN7021 FC21 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET FC21 High-Frequency Amplifier, AM tuner RF Amplifier Applications • Package Dimensions The FC21 contains both a 2SK1740 equivalent chip and a 2SC2812 equivalent chip in the CP package,


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    enn70212sk17402sc2812fc21+5itr01960itr01961itr01963itr01964itr01965 PDF

    2SC5777

    Abstract: TA-3323
    Contextual Info: Ordering number : ENN6991 2SC5777 NPN Triple Diffused Planar Silicon Transistor 2SC5777 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability (Adoption of HVP process).


    Original
    enn69912sc5777ta-3323 PDF

    A0780

    Abstract: MCH3307 MCH5836 SS10015M a07801
    Contextual Info: MCH5836 注文コード No. N A 0 7 8 0 A 三洋半導体データシート 半導体データシート No.NA0780 をさしかえてください。 MCH5836 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード


    Original
    mch5836na0780mch3307ss10015m+6900mm241807petc-00000614a0780-1/6a0780a07801 PDF

    2SK3486

    Contextual Info: Ordering number : ENN7197 2SK3486 N-Channel Silicon MOSFET 2SK3486 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2062A [2SK3486] 4.5 1.6 0.4 1.0


    Original
    enn71972sk348625max PDF

    MCH3406

    Abstract: ENN7010 SANYO marking kf mosfet marking kf
    Contextual Info: Ordering number : ENN7010 MCH3406 N-Channel Silicon MOSFET MCH3406 Ultrahigh-Speed Switching Applications Features • • Low ON-state resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2167A [MCH3406] 0.3 0.25 • Package Dimensions 0.15 0.25 2


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    enn7010mch3406sanyo marking kfmosfet marking kf PDF

    CPH6413

    Contextual Info: 注文コード No. N 7 3 1 9 CPH6413 三洋半導体データシート N CPH6413 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。


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    cph64131200mm2it03623it03624 PDF

    CPH6413

    Contextual Info: 注文コード No. N 7 3 1 9 CPH6413 No. N7319 83002 新 CPH6413 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original
    cph6413n73191200mm2it03623+1it03624 PDF

    MCH3307

    Abstract: MCH5836 SS10015M
    Contextual Info: MCH5836 Ordering number : ENA0780 SANYO Semiconductors DATA SHEET MCH5836 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-channel silicon MOSFET MCH3307 and a schottky barrier diode (SS10015M)


    Original
    mch5836ena0780mch3307ss10015m+1a0780-6/6 PDF

    2SC5793

    Contextual Info: 2SC5793 Ordering number : EN7451A SANYO Semiconductors DATA SHEET 2SC5793 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V .


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    2sc5793en7451a PDF

    N7010

    Abstract: MCH3406
    Contextual Info: 注文コード No. N 7 0 1 0 MCH3406 No. N7010 71801 新 MCH3406 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・1.8V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original
    mch3406n7010900mm2it03499+1it03500 PDF

    N7012

    Abstract: MCH6405
    Contextual Info: 注文コード No. N 7 0 1 2 MCH6405 No. N7012 71801 新 MCH6405 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original
    mch6405n7012900mm2it03519+2it03521it03522 PDF

    2SC5776

    Abstract: TA-3322
    Contextual Info: Ordering number : ENN6990 2SC5776 NPN Triple Diffused Planar Silicon Transistor 2SC5776 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability (Adoption of HVP process).


    Original
    enn69902sc5776ta-3322 PDF

    MCH3307

    Abstract: 70072
    Contextual Info: Ordering number : ENN7007 MCH3307 P-Channel Silicon MOSFET MCH3307 Ultrahigh-Speed Switching Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2167A [MCH3307] 0.3 0.25 • Package Dimensions 0.15 0.25 2 1 0.65


    Original
    enn7007mch330770072 PDF

    IC 74173

    Abstract: 2SC5933 74171
    Contextual Info: Ordering number : ENN7417 2SC5933 NPN Triple Diffused Planar Silicon Transistor 2SC5933 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).


    Original
    enn74172sc59332048bic 74173+174171 PDF

    IC 74173

    Abstract: 74171 N2503 2SC5933 N7417
    Contextual Info: 注文コード No. N 7 4 1 7 2SC5933 No. N7417 N2503 新 NPN 三重拡散プレーナ形シリコントランジスタ 2SC5933 特長 超高精細度 CRT ディスプレイ 水平偏向出力用 ・高速度である。 ・高耐圧である (VCBO=1600V)


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    2sc5933n7417n25032048b+6it03589it03590it03581it03591ic 7417374171 PDF

    2SC5778

    Abstract: 52003 ta-3321
    Contextual Info: Ordering number : ENN6992A 2SC5778 NPN Triple Diffused Planar Silicon Transistor 2SC5778 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2174A [2SC5778] 5.6 3.4 16.0 3.1 0.8 21.0


    Original
    enn6992a2sc577852003ta-3321 PDF

    ic63a

    Abstract: 2SC5791
    Contextual Info: Ordering number : ENN6993A 2SC5791 NPN Triple Diffused Planar Silicon Transistor 2SC5791 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1600V .


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    enn6993a2sc5791ic63a PDF

    2SC5776

    Contextual Info: Ordering number : ENN6990A 2SC5776 NPN Triple Diffused Planar Silicon Transistor 2SC5776 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability (Adoption of HVP process).


    Original
    enn6990a2sc5776 PDF

    2sc5792

    Contextual Info: Ordering number : ENN6994 2SC5792 NPN Triple Diffused Planar Silicon Transistor 2SC5792 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).


    Original
    enn69942sc5792 PDF

    IC 74164

    Abstract: ic 74163 IC 74161 2SC5932
    Contextual Info: Ordering number : ENN7416 2SC5932 NPN Triple Diffused Planar Silicon Transistor 2SC5932 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).


    Original
    enn74162sc59322048bic 74164+2ic 74163ic 74161 PDF

    2SC5793

    Abstract: N7451 74512
    Contextual Info: 注文コード No. N 7 4 5 1 2SC5793 No. N7451 31504 新 NPN 三重拡散プレーナ形シリコントランジスタ 2SC5793 特長 超高精細度 CRT ディスプレイ 水平偏向出力用 ・高速度である。 ・高耐圧である (VCBO=1600V)


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    2sc5793n7451it03579it03580+3it03581it0358274512 PDF

    PC525

    Abstract: 2SC5794 74521 2174A
    Contextual Info: 注文コード No. N 7 4 5 2 2SC5794 No. N7452 31504 新 NPN 三重拡散プレーナ形シリコントランジスタ 2SC5794 特長 超高精細度 CRT ディスプレイ 水平偏向出力用 ・高速度である。 ・高耐圧である (VCBO=1600V)


    Original
    2sc5794n7452it03589it03590+5it03581it03591pc525745212174a PDF