2SK1740 Search Results

EN4112

Abstract: 2SK1740 N1593
Contextual Info: Ordering number:EN4112 N-Channel Junction Silicon FET 2SK1740 HF amplifiers low frequency amplifiers analog switches Package Dimensions • Adoption of FBET process. · Largeyfs. · Small Ciss. · Small-sized package permitting 2SK1740-applied sets to be made small and slim.

2SC2812

Abstract: 2SK1740 FC21 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965
Contextual Info: Ordering number : ENN7021 FC21 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET FC21 High-Frequency Amplifier, AM tuner RF Amplifier Applications • Package Dimensions The FC21 contains both a 2SK1740 equivalent chip and a 2SC2812 equivalent chip in the CP package,

2SK1740

Abstract: N1593 NS411 EN4112
Contextual Info: Ordering n u m b e r:E N 4 1 1 2 2SK1740 No.4112 N-Channel Junction Silicon FET HF amplifiers low frequency amplifiers analog switches F eatu res •Adoption of FBET process. • Large I Yfs I . • Small Ciss. ■Small-sized package permitting 2SK1740-applied sets to be made small and slim.

2SK1740

Abstract: ITR01960 ITR01961 ITR01962 ITR01963 ITR01964 ITR01965 ITR01966 VDG-10V
Contextual Info: 2SK1740 注文コード No. N 4 1 1 2 A 三洋半導体データシート 半導体ニューズ No.N4112 をさしかえてください。 N チャネル接合型シリコン電界効果トランジスタ 2SK1740 高周波増幅用 , 低周波増幅用 , アナログ・スイッチ用

Contextual Info: Ordering number : ENN7021 | TR : NPN Epitaxial Planar Silicon Transistor _FET : N-Channel Silicon Junction FET FC21 IS A /tY O l High-Frequency Amplifier, AM tuner RF Amplifier Applications Package Dimensions Features * The FC21 contains both a 2SK1740 equivalent chip

2SK1740

Abstract: N1593 EN4112
Contextual Info: Ordering number:EN4112 N-Channel Junction Silicon FET 2SK1740 HF amplifiers low frequency amplifiers analog switches Package Dimensions • Adoption of FBET process. · Largeyfs. · Small Ciss. · Small-sized package permitting 2SK1740-applied sets to be made small and slim.

diode sy 710

Abstract: 2SK1740 ITR01960 ITR01961 ITR01962 marking BFG N1593 EN4112
Contextual Info: 2SK1740 Ordering number : EN4112A SANYO Semiconductors DATA SHEET 2SK1740 N-Channel Junction Silicon FET HF Amplifiers Low-Frequency Amplifiers Analog Switches Features • • • • Adoption of FBET process. Large yfs. Small Ciss Small-sized package permitting 2SK1740-applied sets to be made small and slim.

3SK190

Abstract: SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715
Contextual Info: High Frequency Transistors Electrical characteristics Ta = 25 deg. C Absolute maximum ratings Device Package type Application lcao max @ Vcb VcBQ VCEO Vebo (V) (V) (V) , te (mA) Pc (mW) J o Icbo max m hFE @ Vce • Ic Vcb (V) h rc f i @ Vce • lc Vce Ip

2SK968

Abstract: 2SK1375 2sk2073 2SK1747 2SK333 2SK544 2SK937 2SK669 2SK332 2SK715
Contextual Info: b3E » • 7Ti7G7b 0012422 T2Û « T S A J S A 0 Y O Small-signal F e a t u r e s FETs Case Outlines unit-'mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. *Very low noise figure * Large lYfsl * Low gate leak current * Smal1-si zed package permitting FET-used sets to be made smaller

mosfet HF amplifier

Abstract: 3SK266 2sk2073 2SK931 2SA1688 2SA1857 2SA1863 2SC4399 2SC4400 2SC4432
Contextual Info: TRANSISTORS H ig h -F re q u en cy T ra n s is to rs Absolut« maximum ratings Device Package AppHeaiiens ir* mA VCBO ; » geo r X a o <VJ ! (V) I (V) PC (mW) Electrical characteristics (T, = 25 °C) I I leso max @ Vcb Ti I 2SA1863* SMCP HF amplifier 15

RD1004

Abstract: 2SC5707 2sK4096 ECH81 rd1004ls 2SK4101 tf252th SFT1443 vf10bm3 RD2006
Contextual Info: ディスクリートデバイス 2010-7 環境にやさしい製品 超アナログ技術を極めるPower ＆RFデバイス Power 電 源 市 場 耐熱性 高アバランシェ 高耐圧・大電流 高効率 高ESD ・パワーマネジメント （LCDPDP、PC電源、照明）

RD2004

Abstract: 2SK4087 2SK4097 2sk4086 2SC5707 2sk4096 SBX201C 2SC5706 2sk3615 half-bridge power supply
Contextual Info: ディスクリートデバイス 2009-4 三洋ディスクリートデバイス 環境に配慮した三洋ディスクリートデバイス ECoP R ディスクリートデバイスExPD パワーデバイス）は、 様々な分野の機器の小型化・薄型化・高効率化・高信頼性化に

mosfet HF amplifier

Abstract: Hf amplifier 200T
Contextual Info: TRANSISTORS High-Frequency Transistors Absolut* maximum rating* tm Application* 2SA1863* SMCP HF amplifier 2SC4918* SMCP HF amplifier 2SA1857 MCP 2SC4400 MCP 2SC4399 Vceo Í »CEO W ! V i 12 15 ifl «fetO (V) (mA) PC (mW) Electrical characteristics (T, = a

SK968

Abstract: 2SK937 2SK544 2SK669 2SJ286 2SK5 2SK212 2SK543 2SK436 2SK715
Contextual Info: Smal 1-signal SA*YO FETs Features ♦ Very low noise figure * Large IYfsI * Low gate leak current Case Outlines unit¡mm SANYO:SMCP ♦ Small-sized package permitting FET-used sets to be made smaller l¡Source, 2¡Drain, 3¡Gate, i LF ),Low Noise,Analog Switch,Impedance Conversion Applications

Flyback Transformers SANYO TV

Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
Contextual Info: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)

2sk1760

Abstract: 2SK1767 2SK1745 2SK1758 2SK1736 2SK1747 2SK1733 2SK1734 2SK1735 2SK1737
Contextual Info: - 120 - f m % it £ ffl m m Ä % K 2SK1733 * £ V E # * (V) ft * 8 fé I* it IE P d/ P ch ft (A) 1* (max) (A) <W> & 1± (Ta=25<C ) Ig ss Vg s (V) (min) (max) V d s (A) (V) (A) (min) (max) V d s (V) (V) (V) (min) (S) ÏD (A) Vd s (V) Id (A) HS SW MOS N E

ENN8366

Abstract: CPH5903 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 ITR01966 J 350 FET
Contextual Info: CPH5903 Ordering number : ENN8366 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Junction Silicon FET CPH5903 High-Frequency Amplifier. AM Amplifier Applications Features • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting

Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta - 25 O RDSfon ID •VGS Applications Voss CV> V(tff ID (A) PD m Teh CC) VGSS(off) (V> RDS (on) m ax(Q) |Yls| @ VDS - ID ID <A) VGS (V) VDS a ID (A)