2SC582 Search Results
2SC582 Datasheets (38)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC582 | Fuji-SVEA | Japanese 2S Transistor Cross Reference Datasheet | Scan | 51.16KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC582 | Fuji-SVEA | Japanese 2S Transistor Cross Reference Datasheet | Scan | 35.04KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC582 |
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Motorola Semiconductor Data & Cross Reference Book | Scan | 44.21KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC582 | Unknown | Transistor Shortform Datasheet & Cross References | Scan | 84.86KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC582 | Unknown | Basic Transistor and Cross Reference Specification | Scan | 45.78KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC582 | Unknown | Shortform Transistor PDF Datasheet | Short Form | 162.78KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC582 | Unknown | Japanese Transistor Cross References (2S) | Scan | 36.18KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC582 | Unknown | Cross Reference Datasheet | Scan | 37.78KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC582 | Unknown | Transistor Replacements | Scan | 72.4KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC582 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 116.69KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC582 | Unknown | Transistor Substitution Data Book 1993 | Scan | 34.52KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC582 | Unknown | Shortform Transistor Datasheet Guide | Short Form | 91.12KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC582 | Unknown | Vintage Transistor Datasheets | Scan | 49.23KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC582 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 124.63KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC582 | Unknown | The Japanese Transistor Manual 1981 | Scan | 112.69KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC582 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 43.84KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC582 |
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Pro-Electron Transistor Datasheets | Scan | 26.3KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5820 |
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Transistor; Type: Amplifiers/Bipolar; VCEO (V): 4; Ic (A): 0.035; Pc (W): 0.05; hFE: 70 to 150; fT (GHz) typ: 20; Cob (pF) max: 0.15; NF (dB) typ: 1.15; Package: CMPAK-4 | Original | 115.41KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5820 |
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Silicon NPN Epitaxial | Original | 137.75KB | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5823 | Sanyo Semiconductor | General-Purpose Transistors | Original | 37KB | 4 |
2SC582 Price and Stock
ROHM Semiconductor 2SC5824T100QTRANS NPN 60V 3A MPT3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SC5824T100Q | Cut Tape | 2,254 | 1 |
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2SC5824T100Q | 1,249 |
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2SC5824T100Q | 1,980 | 242 |
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2SC5824T100Q | 1,000 |
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2SC5824T100Q | Reel | 1,000 |
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2SC5824T100Q | 1 |
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2SC5824T100Q | 70 | 1 |
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2SC5824T100Q | 1,000 | 16 Weeks | 1,000 |
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2SC5824T100Q | 1,000 |
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ROHM Semiconductor 2SC5824T100RTRANS NPN 60V 3A MPT3 |
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2SC5824T100R | Digi-Reel | 579 | 1 |
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2SC5824T100R | 1,218 |
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2SC5824T100R | 11,367 | 216 |
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2SC5824T100R | Bulk | 1 |
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2SC5824T100R | 1 |
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2SC5824T100R | 16 Weeks | 1,000 |
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2SC5824T100R | Cut Tape | 11,367 | 0 Weeks, 1 Days | 5 |
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ROHM Semiconductor 2SC5826TV2QTRANS NPN 60V 3A ATV |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SC5826TV2Q | Reel | 2,500 |
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ROHM Semiconductor 2SC5826TV2RTRANS NPN 60V 3A ATV |
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2SC5826TV2R | Reel | 2,500 |
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Renesas Electronics Corporation 2SC5820WU-TL-ETrans RF BJT NPN 4V 0.035A 100mW 4-Pin CMPAK T/R |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SC5820WU-TL-E | 3,000 | 1,191 |
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2SC5820WU-TL-E | 3,000 | 1 |
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2SC582 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor Outline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.) |
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2SC5824 SC-62) OT-89> 2SA2071 A/200mA) R1102A | |
Contextual Info: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.) |
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2SC5824 SC-62) OT-89> 2SA2071 A/200mA) R1102A | |
Contextual Info: 2SA2701 / 2SA2702 Datasheet PNP -3.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825 |
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2SA2701 2SA2702 2SA2071 SC-62) OT-89> 2SC5824 2SC5825 -500mV 2SA2072 SC-63) | |
Contextual Info: Preliminary Datasheet 2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator R07DS0279EJ0300 Previous: REJ03G0758-0200 Rev.3.00 Mar 28, 2011 Application • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; |
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2SC5820 R07DS0279EJ0300 REJ03G0758-0200) PTSP0004ZA-A R07DS0279EJ0300 | |
C5825Contextual Info: Power transistor 60V, 3A 2SC5825 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load. |
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2SC5825 200mV 2SA2072. SC-63) OT-428> C5825 R1120A C5825 | |
C5825
Abstract: transistor C5825 2SA20 2SC5825 2SA2073 Transistor 2sa2073
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2SC5825 SC-63) OT-428> 200mV 2SA2073 C5825 C5825 transistor C5825 2SA20 2SC5825 2SA2073 Transistor 2sa2073 | |
2SA2071
Abstract: 2SC5824 T100
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2SC5824 200mV 200mA) 2SA2071. 2SA2071 2SC5824 T100 | |
2SC5829
Abstract: NP0A547
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NP0A547 2SC5829 2SC5829 NP0A547 | |
C5825
Abstract: 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073
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2SC5825 200mV 2SA2073 SC-63) OT-428> C5825 C5825 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5829 Silicon NPN epitaxial planar type For high speed switching Unit: mm 3 2 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) |
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2002/95/EC) 2SC5829 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5829 Silicon NPN epitaxial planar type For high speed switching Unit: mm 3 2 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) |
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2002/95/EC) 2SC5829 SJC00287AED | |
2SA2071
Abstract: 2SC5824 T100
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2SC5824 200mV 200mA) 2SA2071. 2SA2071 2SC5824 T100 | |
2SC5829Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5829 Silicon NPN epitaxial planar type For high speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm • Allowing the small current and low voltage operation • High transition frequency fT |
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2002/95/EC) 2SC5829 2SC5829 | |
C5825Contextual Info: Power transistor 60V, 3A 2SC5825 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load. |
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2SC5825 200mV 2SA2072. SC-63) OT-428> C5825 R1010A C5825 | |
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2602
Abstract: 11308 2SC5826
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2SC5826 Q2SC5826 3000E-12 9866E-12 000E-3 2090E-3 35E-12 685E-12 2602 11308 2SC5826 | |
2SC5829Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5829 Silicon NPN epitaxial planar type For high speed switching Unit: mm 3 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin |
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2002/95/EC) 2SC5829 2SC5829 | |
2SC5820
Abstract: application of IC 723 09 06 848 0521 BB 1507 FL
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2SC5820 REJ03G0758-0200 ADE-208-1604A) PTSP0004ZA-A 2SC5820 application of IC 723 09 06 848 0521 BB 1507 FL | |
c5826
Abstract: 2SC5826 2SA2073 2SA20
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2SC5826 65Max. 200mV 2SA2073 C5826 c5826 2SC5826 2SA2073 2SA20 | |
c5826Contextual Info: Power transistor 60V, 3A 2SC5826 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load. |
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2SC5826 200mV 2SA2073 C5826 R1120A c5826 | |
2SA2071
Abstract: 2SC5824 T100
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2SC5824 200mV 200mA) 2SA2071. R1120A 2SA2071 2SC5824 T100 | |
C5825
Abstract: 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073
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2SC5825 SC-63) OT-428> 200mV 2SA2073 C5825 C5825 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073 | |
Contextual Info: Preliminary Datasheet 2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator R07DS0279EJ0300 Previous: REJ03G0758-0200 Rev.3.00 Mar 28, 2011 Application • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; |
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2SC5820 R07DS0279EJ0300 REJ03G0758-0200) PTSP0004ZA-A | |
2SC5829
Abstract: NP0A547
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2002/95/EC) NP0A547 2SC5829 2SC5829 NP0A547 | |
2SC5820
Abstract: str 1195 IC STR 404
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2SC5820 ADE-208-1604A D-85622 D-85619 2SC5820 str 1195 IC STR 404 |