2SC582 Search Results

Contextual Info: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor Outline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

Contextual Info: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

Contextual Info: 2SA2701 / 2SA2702 Datasheet PNP -3.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825

Contextual Info: Preliminary Datasheet 2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator R07DS0279EJ0300 Previous: REJ03G0758-0200 Rev.3.00 Mar 28, 2011 Application • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure;

C5825

Contextual Info: Power transistor 60V, 3A 2SC5825 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.

C5825

Abstract: transistor C5825 2SA20 2SC5825 2SA2073 Transistor 2sa2073
Contextual Info: 2SC5825 Transistors Power transistor 60V, 3A 2SC5825 !External dimensions (Unit : mm) 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 1.0 0.5 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 0.75 !Features 1) High speed switching.

2SA2071

Abstract: 2SC5824 T100
Contextual Info: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 !External dimensions (Units : mm) MPT3 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) !Applications NPN Silicon epitaxial planar transistor 0.4 1.5

2SC5829

Abstract: NP0A547
Contextual Info: Composite Transistors NP0A547 Silicon NPN epitaxial planar type Unit: mm For high-speed switching 0.12+0.03 -0.02 4 2 3 0.10 1 0.35 (0.35) 1.00±0.05 (0.10) Display at No.1 lead • Basic Part Number • 2SC5829 x 2 1: Base (Tr1) 2: Emitter (Tr1) 3: Base (Tr2)

C5825

Abstract: 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073
Contextual Info: 2SC5825 Transistors Power transistor 60V, 3A 2SC5825 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5829 Silicon NPN epitaxial planar type For high speed switching Unit: mm 3 2 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5829 Silicon NPN epitaxial planar type For high speed switching Unit: mm 3 2 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SA2071

Abstract: 2SC5824 T100
Contextual Info: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 !External dimensions (Units : mm) MPT3 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) !Applications NPN Silicon epitaxial planar transistor 0.4 1.5

2SC5829

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5829 Silicon NPN epitaxial planar type For high speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm • Allowing the small current and low voltage operation • High transition frequency fT

C5825

Contextual Info: Power transistor 60V, 3A 2SC5825 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.

2602

Abstract: 11308 2SC5826
Contextual Info: SPICE PARAMETER 2SC5826 by ROHM TR Div. * 2SC5826 NPN BJT model * Date: 2006/12/04 .MODEL 2SC5826 NPN + IS=3.3000E-12 + BF=248.92 + VAF=100 + IKF=5.2602 + ISE=3.3000E-12 + NE=1.7608 + BR=7.4847 + VAR=100 + IKR=1.1308 + ISC=8.9866E-12 + NC=3.3932 + NK=.87107

2SC5829

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5829 Silicon NPN epitaxial planar type For high speed switching Unit: mm 3 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin

2SC5820

Abstract: application of IC 723 09 06 848 0521 BB 1507 FL
Contextual Info: 2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator REJ03G0758-0200 Previous ADE-208-1604A Rev.2.00 Aug.10.2005 Application • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ., NF = 1.15 dB typ. at f = 1.8 GHz

c5826

Abstract: 2SC5826 2SA2073 2SA20
Contextual Info: 2SC5826 Transistors Power transistor 60V, 3A 2SC5826 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA)

c5826

Contextual Info: Power transistor 60V, 3A 2SC5826 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.

2SA2071

Abstract: 2SC5824 T100
Contextual Info: Power transistor 60V, 3A 2SC5824 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.

C5825

Abstract: 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073
Contextual Info: 2SC5825 Transistors Power transistor 60V, 3A 2SC5825 !External dimensions (Unit : mm) 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 1.0 0.5 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 0.75 !Features 1) High speed switching.

Contextual Info: Preliminary Datasheet 2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator R07DS0279EJ0300 Previous: REJ03G0758-0200 Rev.3.00 Mar 28, 2011 Application • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure;

2SC5829

Abstract: NP0A547
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP0A547 Silicon NPN epitaxial planar type Unit: mm For high-speed switching 0.12+0.03 -0.02 4 2 1.00±0.05 3 0.10 1 (0.35) (0.35) 1.00±0.05 • 2SC5829 x 2 1: Base (Tr1)

2SC5820

Abstract: str 1195 IC STR 404
Contextual Info: 2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator ADE-208-1604A Z Rev.1 Nov. 2002 Features • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ., NF = 1.15 dB typ. at f = 1.8 GHz