SJC00287AED Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5829 Silicon NPN epitaxial planar type For high speed switching Unit: mm 3 2 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5829 Silicon NPN epitaxial planar type For high speed switching Unit: mm 3 2 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SC5829

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5829 Silicon NPN epitaxial planar type For high speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm • Allowing the small current and low voltage operation • High transition frequency fT

2SC5829

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5829 Silicon NPN epitaxial planar type For high speed switching Unit: mm 3 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin

2SC5829

Contextual Info: Transistors 2SC5829 Silicon NPN epitaxial planar type For high speed switching Unit: mm 3 2 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 10 V Collector-emitter voltage (Base open) VCEO 7