2SC54 Search Results

2sc5464

Contextual Info: T O SH IB A 2SC5464 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5464 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 ie l 2 = 12dB f= lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: 2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5446 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage Unit: mm : VCBO = 1700 V z Low Saturation Voltage : VCE sat = 3 V (Max.)

2SC5417

Abstract: 600v 15a npn
Contextual Info: JMnic Product Specification 2SC5417 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High breakdown voltage ・High reliability APPLICATIONS ・For inverter lighting applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-220F and symbol

2SC5439

Contextual Info: JMnic Product Specification 2SC5439 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High collector breakdown voltage ・Excellent switching times APPLICATIONS ・Switching regulator applications ・High voltage switching applications ・DC-DC converter applications

2SC5436

Abstract: 2SC5668
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA844TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3.6 to 4.2 GHz oscillation application • 2 different built-in transistors (2SC5436, 2SC5668)

2SC5404

Contextual Info: Inchange Semiconductor Product Specification 2SC5404 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P H IS package ・High voltage;high speed ・Low collector saturation voltage APPLICATIONS ・Horizontal deflection output for high resolution display,color TV

2SC5436

Abstract: 2SC5600 NEC 821
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5600) Q1: Low noise transistor NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

C5458

Abstract: 2SC5458
Contextual Info: 2SC5458 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications • Unit: mm Excellent switching times: tr = 0.5 s max tf = 0.3 μs (max) (IC = 0.4 A)

2SC5439

Abstract: C5439
Contextual Info: 2SC5439 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5439 Switching Regulator Applications High-Voltage Switching Applications DC-DC Converter Applications Inverter Lighting Applications Unit: mm • Excellent switching times: tr = 0.2 s typ. , tf = 0.15 μs (typ.)

C5466

Abstract: 2SC5466 IC-303
Contextual Info: 2SC5466 東芝トランジスタ シリコンNPN三重拡散プレーナ型 2SC5466 ○ ダイナミックフォーカス用 ○ 高電圧スイッチング用 ○ 高電圧増幅用 • 単位: mm 高耐圧です。: VCEO = 800 V 絶対最大定格 Ta = 25°C

IC 7443

Abstract: 2SC5432 2SC5006
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 0.8 mm × 0.59 mm: TYP.) UNIT

2SC5435

Abstract: 2SC5437 NEC 2505 nj
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA836TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5437) Q1: Built-in low noise, high-gain transistor

2SC5435

Abstract: 2SC5786 NEC 7815
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA860TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor

2SC5436

Abstract: 2SC5786 4550 nec IC 7432 data
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA861TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor

c5458

Abstract: 2SC5458 OF TRANSISTOR c5458
Contextual Info: 2SC5458 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 Industrial Applications Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Inverter Applications • Excellent switching times: tr = 0.5 µs max

Contextual Info: TOSHIBA 2SC5458 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5458 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm DC-DC CONVERTER APPLICATIONS DC-AC INVERTER APPLICATIONS • • Excellent Switching Times

Contextual Info: TOSHIBA 2SC5466 TO SHIBA TRANSISTOR DYNAM IC FOCUS APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5466 Unit in mm HIGH VO LTAGE SWITCHING APPLICATIONS HIGH VO LTAGE AMPLIFIER APPLICATIONS • High Voltage : V ç e O = 800 V MAXIMUM RATINGS Ta = 25°C SYMBOL

Contextual Info: 2SC5448 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output HITACHI Features • High breakdown voltage VCB0 = 1500 V • High speed switching tf = 0.15 ¡iscc typ. at fH= 64 kHz • Isolated package TO-3PFM Outline TO-3PFM 1. Base

A1081

Contextual Info: 2SC5414A Ordering number : ENA1081 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5414A High-Frequency Low-Noise Amplifier Applications Features • • High gain : ⏐S21e⏐2=9.5dB typ f=1GHz . High cut-off frequency : fT=6.7GHz typ.

2SC5497

Abstract: NF 841
Contextual Info: TOSHIBA 2SC5497 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5497 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.4dB f=2GHz • High Gain : Ga = 14dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL

Contextual Info: TO SHIBA 2SC5460 TENTATIVE TO SH IBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE L f if i Unit in mm D Y N A M IC FOCUS APPLICATIONS 8.3MAX. HIGH VOLTAGE SW ITCHING APPLICATIONS w r ;n v n i T A n F H ig h a m p iif if r appi 0 3.1 ± 0.1 i r a t id n ç 3:

transistor 0618

Contextual Info: TOSHIBA 2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SC5422 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR M EDIUM RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS VCBO = 1700V VCE sat = 3V (Max.) tf=0.15/¿s (Typ.)

Contextual Info: TO SH IBA TENTATIVE 2SC5458 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5458 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER APPLICATIONS DC-AC INVERTER APPLICATIONS • • Excellent Switching Times

marking TN

Abstract: transistor c 5083 2SC5186 2SC5436
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 0.8 mm × 0.59 mm: TYP.)