2SC58 Search Results

Contextual Info: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor Outline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

Contextual Info: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

Contextual Info: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)

Contextual Info: 2SA2701 / 2SA2702 Datasheet PNP -3.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825

2SA2098

Abstract: 2sc5887 IC 7495 datasheet TA-372 2SA2098-2SC5887 ic 7495 2SA20 7495 ic
Contextual Info: Ordering number : ENN7495 2SA2098 / 2SC5887 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2098 / 2SC5887 High-Current Switching Applications Applications • Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm 2041A Features • 3.2

2sa2099

Abstract: 2SC5888 equivalent transistor 2sc5888 ENN7331 2SA20 D2502
Contextual Info: Ordering number : ENN7331 2SA2099 / 2SC5888 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications • Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm 2041A Features • 3.2

a888 513

Contextual Info: 2SC5849 Silicon NPN Epitaxial VHF/UHF wide band amplifier REJ03G0759-0100 Previous ADE-208-1469 Rev.1.00 Aug.10.2005 Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R ) 3 1. Emitter

2SC5819

Contextual Info: 2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.15 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)

C5886

Abstract: 2SC5886
Contextual Info: 2SC5886 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5886 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)

2SA2088

Abstract: 2SC5876 T106
Contextual Info: Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

2SC5895

Abstract: 2SC589
Contextual Info: SavantIC Semiconductor Product Specification 2SC5895 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High speed switching ·Low collector saturation voltage APPLICATIONS ·Power supply for audio and visual equipments such as TVs and VCRs

2SC5849

Abstract: DSA003640 operation of ic 741
Contextual Info: 2SC5849 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1469 Z Rev. 0 Nov. 2001 Features • Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 Note: Marking is “WY–“. 1. Emitter 2. Base 3. Collector 2SC5849 Absolute Maximum Ratings

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5848 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2079 Unit: mm 3 2 Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage (Base open)

Contextual Info: Medium power transistor 60V, 0.5A AEC-Q101 Qualified 2SC5876FRA 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

2SC5436

Abstract: 2SC5800 low vce transistor
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor

C5875

Abstract: 2SA2087 2SC5875
Contextual Info: 2SC5875 Transistors Power transistor 30V, 2A 2SC5875 !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and

Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor

c5886

Abstract: transistor c5886 2SC5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •

Contextual Info: Preliminary Datasheet 2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator R07DS0279EJ0300 Previous: REJ03G0758-0200 Rev.3.00 Mar 28, 2011 Application • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure;

Contextual Info: Transistors 2SC5839 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification Unit: mm • Features 3 1 0.60±0.05 M Di ain sc te on na tin nc ue e/ d 2 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Symbol Rating Unit Collector-base voltage Emitter open

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2078G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5846G • Features ■ Package • High forward current transfer ratio hFE • SSS-Mini type package, allowing downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2078 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5846 Unit: mm 0.33+0.05 –0.02 0.10+0.05 –0.02 5˚ • High forward current transfer ratio hFE

2SC5890

Contextual Info: JEIIZU , Line. C/ 20 STERN AVE. SPRINGFIELD, .NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN RF Transistor 2SC5890 UkSUKIKMUN >"4|^^ • High Gain Bandwidth Product SOT-23-3L package fT = 7.8 GHz TYP. • High power gain and low noise figure ;

2SC5800

Abstract: NESG2046M33 NEC JAPAN IC
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TD NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor