C5886 Search Results

C5886

Abstract: 2SC5886
Contextual Info: C5886 東芝トランジスタ シリコンNPNエピタキシャル形 C5886 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)

c5886

Abstract: transistor c5886 2SC5886
Contextual Info: C5886 TOSHIBA Transistor Silicon NPN Epitaxial Type C5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •

APPLE A6 CHIP

Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
Contextual Info: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6

c5886

Abstract: 2SC5886
Contextual Info: C5886 東芝トランジスタ シリコンNPNエピタキシャル形 C5886 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)

C5886

Abstract: transistor c5886 c5886 transistor
Contextual Info: C5886 TOSHIBA Transistor Silicon NPN Epitaxial Type C5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •

C5886A

Contextual Info: C5886A TOSHIBA Transistor Silicon NPN Epitaxial Type C5886A High-Speed Switching Applications DC/DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

DBRF200P

Contextual Info: A/V - Coax & Speaker Wire: General Cable offers a variety of Carol Brand wire and cable for audio/video and direct burial applications. From field production cable to microphone, snake, guitar and speaker cable, General Cable supports the increasingly demanding entertainment industry.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

C5802

Abstract: connector cross reference C5778 C5776 C5814 C3523 C3524 C5760 C5761 C3525
Contextual Info: Electronics Coaxial Cable RG 6/U Type Product Construction: Conductors: Jacket: Applications: • Premium PVC compound Packaging: • Copper per ASTM B-3 • Copper-clad steel per ASTM B-869 • Please contact Customer Service for packaging and color options

c5886

Abstract: 2SC5886
Contextual Info: C5886 TOSHIBA Transistor Silicon NPN Epitaxial Type C5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •

C5886A

Abstract: 2SC5886 2SC5886A C5886
Contextual Info: C5886A TOSHIBA Transistor Silicon NPN Epitaxial Type C5886A High-Speed Switching Applications DC/DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max)

c5886

Abstract: C5776 C5761 C5760 B-869 B869 connector cross reference
Contextual Info: Electronics Coaxial Cable RG 6/U Type Product Construction: Conductors: Jacket: Applications: • Premium PVC compound Packaging: • Copper per ASTM B-3 • Copper-clad steel per ASTM B-869 • Please contact Customer Service for packaging and color options

c5802

Abstract: C5802 transistor C1162 C5856 transistor C1162 c5027 c6067 C1318 transistor C3169 C1106
Contextual Info: Technical Information Electronics Belden-to-General Cable Carol Brand Cross Reference Index BELDEN PART NUMBER 558AFS 558GMS 658AFS 658GMS 1032A 1186A 1189A 1190A 1223A 1300SB 1306SB 1426A 1513A 1523A 1524A 1525A 1530A 1613A 1617A 1694A 1694SB 1833A 1840A

transistor c3150

Abstract: c3271 KEMA KEUR thermostat C4108
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Contextual Info: 8.50" ELECTRONICS PRODUCT BULLETIN CATV/MATV Coaxial Cables 11" General Cable now offers Carol Brand CATV/MATV Coaxial Cables for Radio Frequency RF signal transmission in broadband cable television and master antenna applications. These coaxial cables

C5886A

Abstract: 2SC5886A
Contextual Info: C5886A 東芝トランジスタ シリコンNPNエピタキシャル形 C5886A ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

C5886

Abstract: 2SC5886
Contextual Info: C5886 TOSHIBA Transistor Silicon NPN Epitaxial Type C5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A · Low collector-emitter saturation: VCE (sat) = 0.22 V (max) · High-speed switching: tf = 55 ns (typ.)

c4137

Abstract: c6067 C4106 c2539 c06-15 Transistor C2216 transistor C4125 C4106 transistor c2534 c4125
Contextual Info: May 26, 2006 Crystal Kendrick Director of Inside Sales 4 Tesseneer Drive Highland Heights, KY 41076 Phone: 859-572-8395 Fax: 888-265-6655 Email: ckendrick@generalcable.com Dear Valued Customer: General Cable Corporation certifies that the following Electronics, Portable Cord and Industrial Flex

transistor c5886

Contextual Info: C5886 TOSHIBA Transistor Silicon NPN Epitaxial Type C5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •

transistor c5886

Abstract: c5886 c5886 transistor 2SC5886
Contextual Info: C5886 TOSHIBA Transistor Silicon NPN Epitaxial Type C5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243