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Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet

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Toshiba America Electronic Components


Toshiba America Electronic Components 2SC5886A(T6L1,NQ) - Tape and Reel (Alt: 2SC5886A(T6L1,NQ))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SC5886A(T6L1,NQ)	Tape & Reel		29 Weeks, 5 Days	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	2SC5886A(T6L1,NQ)		3,680			1 $1.21 10 $0.75 100 $0.49 1000 $0.35 10000 $0.28	Buy Now
Newark ()	2SC5886A(T6L1,NQ)	Tape & Reel	7,344		100	1 - 10 - 100 $0.49 1000 $0.34 10000 $0.28	Buy Now
	2SC5886A(T6L1,NQ)	Cut Tape	7,344		1	1 $1.19 10 $1.19 100 $0.49 1000 $0.34 10000 $0.28	Buy Now
Avnet Asia	2SC5886A(T6L1,NQ)			28 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	2SC5886A(T6L1,NQ)			17 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Vyrian	2SC5886A(T6L1,NQ)		6,300			1 - 10 - 100 - 1000 - 10000 -	Get Quote

C5886A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
C5886A Contextual Info: C5886A TOSHIBA Transistor Silicon NPN Epitaxial Type C5886A High-Speed Switching Applications DC/DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max)	Original	2sc5886a c5886a	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	sce0004l ttc4116 2sc4118 tta1586 +162sa1588 2sc4117 2sa1587 2sc5233 2sc4738 2sa1832 gt30f131 gt30f124 tk18a60v smd m5 transistor 6-pin smd transistor h2a npn gt50n322 marking smd pnp transistor h2a gt30j124 30f124 tpcp8r01	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	scj0004r sc-43 2sc1815 2sc732tm +142sc1959 2sa1015 2sc2240 2sa970 igbt gt30f124 igbt gt30j124 gt30f124 gt30j124 gt50n322 tk25e06k3 tpcp8r01 tk12a10k3 gt30g124 2sk3075	PDF
C5886A Abstract: 2SC5886 2SC5886A C5886 Contextual Info: C5886A TOSHIBA Transistor Silicon NPN Epitaxial Type C5886A High-Speed Switching Applications DC/DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max)	Original	2sc5886a c5886a 2sc5886 c5886	PDF
C5886A Abstract: 2SC5886A Contextual Info: C5886A 東芝トランジスタシリコンNPNエピタキシャル形 C5886A ○ 高速スイッチング用 ○ DC-DC コンバータ用単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)	Original	2sc5886a c5886a	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9sce0004k sc-43 2sc1815 700the +10gt30f124 tpcp8r01 gt30j124 japanese 2sc transistor 2010 smd transistor h2a smd marking 8l01 tk25e06k3 gt45f122 gt30g124 gt30f123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	sc-43 2sc1815 tps615 tps616 +11tps610 transistor bc 245 247y smd transistor h2a gt30g122 gt35j321 gt45f123 marking smd pnp transistor h2a gt45f122 gt45f122 series gt30f122	PDF
Contextual Info: C5886A 東芝トランジスタシリコンNPNエピタキシャル形 C5886A ○ 高速スイッチング用 ○ DC-DC コンバータ用単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)	Original	2sc5886a	PDF
C5886A Abstract: 2SC5886A Contextual Info: C5886A TOSHIBA Transistor Silicon NPN Epitaxial Type C5886A High-Speed Switching Applications DC/DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max)	Original	2sc5886a c5886a	PDF
Contextual Info: C5886A TOSHIBA Transistor Silicon NPN Epitaxial Type C5886A High-Speed Switching Applications DC/DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max)	Original	2sc5886a	PDF
C5886A Abstract: 2SC5886A Contextual Info: C5886A TOSHIBA Transistor Silicon NPN Epitaxial Type C5886A High-Speed Switching Applications DC/DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max)	Original	2sc5886a c5886a	PDF
GT45F122 Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	scj0004o sc-43 2sc1815 2sc732tm +142sc1959 2sa1015 2sc2240 2sa970 gt45f122 tk13a60u gt30f123 2sk4207 gt30j124 igbt gt30f123 gt30f122 gt30g122 2sc5471 igbt gt30j124	PDF
GT30J124 Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	sce0004i sc-43 2sc1815 gt30j124 +9smd transistor h2a gt45f122 tpcp8r01 gt30f123 2sc1815 smd type smd marking 8l01 h2a smd 2sc5471 2sc5200 amplifiers circuit diagram	PDF
C5886A Abstract: 2SC5886A 2SC58 c5886 Contextual Info: C5886A 東芝トランジスタシリコンNPNエピタキシャル形 C5886A ○ 高速スイッチング用 ○ DC-DC コンバータ用単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)	Original	2sc5886a 20070701-ja c5886a 2sc58 +1c5886	PDF