2SK5 Search Results

2SK578

Abstract: 2SK57
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK578 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVE, DC-DC CONVERTER AND SWITCHING REGURATOR APPLICATIONS. #3,3±Q.2 FEATURES: . Low Drain-Source ON Resistance

2SK1118

Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531

L04A

Abstract: 2SK529
Contextual Info: 2SK529 FIELD EFFECT TRANSISTOR_ SILICON N CHANNEL MOS TYPE 7T-MOS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 0s.e±ae FEATURES: . High Breakdown Voltage : V(gR)0gg=45OV

2SK573

Abstract: diode 35v 10a
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOS 2SK573 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 15.9MAX. .03.2±O.2 DRIVE APPLICATIONS. . Low Drain-Source ON Resistance

2SK545

Abstract: 1789B ict7
Contextual Info: I Ordering number: ENI789B 2SK545 N 0.1789B N -C hannel Jun ction S ilicon FET SANYO- i Impedance Converter Applications A p p lica tio n s •Im pedance converter applications. • Infrared sensor. F eatu res • S m a ll I q s s • S m a ll C iss. • U ltracom p act package perm ittin g 2SK 545-applied sets to be com pact.

2SK543

Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7*n7Q7b OOObTSO 2SK543 7 T-31-ZS ♦ N -C h an n el M O S Silicon FET 2024A FM Tuner, VHF-Band Amp Applications 1791C Features . Low noise. NF=1.8dB typ f=100MHz • High power gain. PG=27dB typ(f=100MHz) . Small reverse transfer capacitance. cras=0.035pF(VDS=10V,f=1MHz)

2SK546

Contextual Info: Ordering number:EN1790B N-Channel Junction Silicon FET 2SK546 Impedance Converter Applications Applications Package Dimensions • Impedance conversion. · Infrared sensor. unit:mm 2034A [2SK546] 4.0 Features 3.0 · Low IGSS. · Small Ciss. 2.2 15.0 0.6 1.8

2SK582

Abstract: 2SK600 2SK581 2SK609 2SK610 2SK606 2SK603 2sk611 2SK590 2SK604
Contextual Info: 56 - f m & ffl tt £ & m ft K 2SK578 £ X V* it ? Jk V fë [* * £* (V) H E Pp/PcH (A) * (max) (A) (W) & <Ta=25eO) ¥f m I g ss Vg s (V) (min) (max) Vds (A) (A) (V) (min) (max) Vds (V) (V) (V) (min) (S) Id (A) •—Vt - Id (A) HS PSW MOS N E 150 DSS

Contextual Info: Ordering number : EN2550B 2SK536 N-Channel MOSFET http://onsemi.com 50V, 100mA, Single CP Features • • • Large | yfs | Enhancement type Low ON-state resistance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage

Contextual Info: HITACHI/-COPTOELECTRONICS} 73 - ^ W 2 0 5“ H 1 IÄ C H 1 H OPTÜEtrC'ïR0Ñ1 CS >" “ DE I 4 4 ^ 2 0 5 DGIGGTS 73C 10095 D 2SK535 ,2SK535 § S ILIC O N N -C H A N N E L M O S FET © Type © T re e HIGH SPEED POWER SWITCHING • FEATURES • High Speed S w itching.

Contextual Info: I Ordering number: EN1789B 2SK545 N0.1789B N-Channel Junction Silicon FET Impedance Converter Applications Applications •Impedance converter applications. • Infrared sensor. Features • Small Iqss• Small Ciss. • Ultracompact package permitting 2SK545-applied sets to be compact.

2SK514

Abstract: d1352 C982 M-0258 MA 7824 T460-8525 FT010 ra022 2sk514 transistor transistor 2sk514
Contextual Info: iM u m y ? > > * * Junction Field Effect Transistor 2SK514 * at H M W W t i L l m • 4.0 ± 0 .1 I 1 .0 * 0 ,2 T a =25 bC) K r - h • k h r - > n n * flE 4 r - > * h £ m m -50 V Vqso -50 V Vpsx * 50 V at Id 20 raA « Ig 10 mA * Pt 250 mW Tj 125 X > ; x a > a #

FET GAAS marking a

Abstract: gaas fet marking a JT MARKING 2SK593
Contextual Info: 2SK593 2SK593 GaAs N 7 + MES FET/GaAs N-Channel MES FET Sil] ;£Æ;SÏ#të;*IÈ^i|Î*gffl/RF Wide- band Low- noise Amplifier • ^ /F eatu res • E W ttf* b 50—1000MHz 0/ Wide band Amp.(50~1000MHz) • im & o / LowNF • 1£0/L o w IM ■ Absolute Maximum Ratings (Ta=25°C)

2SK56

Contextual Info: 2SK56 2SK5Ó « « » a « / ’'M AINTENANCE v*;u> N ^ + F E T /S i N-Channel Junction FET J M â M M * * / R F Am plifier f# » /F e a tu r e s • < S a S # C,„ à - 'j'? l -, /L ow icedback Capacitance (Cr„) • m f N F= 4. 5dB («nax.)/Low noiie figure N F= C 5dB (ma*.)

2SK54

Contextual Info: 2SK54î'U a V N * * ^ ^ S M F E T S IL IC O N N - C H A N N E L J U N C T I O N F E T VH F A M S * « , V H F A M P L IF IE R , MIXER ïS*ê*ffi 20 1. Y - h ! Gate 2. y — X ; Source 3. K u- 4 > : Drain Di mensions in mm (JE D E C TO-92) A B S O L U T E M A X IM U M R A T I N G S (7*0=2513 )

Contextual Info: 2SK545-12 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V) I(D) Max. (A)1.0m I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)125õ I(GSS) Max. (A)500p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)300u

2SK580

Abstract: 2SK579 2SK57 2SK58
Contextual Info: 2SK579 L ,2SK580£), 2SK579 ,2SK580(§) IJ J V N * + M O S FET SILICON N -C H A N N EL M O S FET HIGH S P E E D PO W ER SWITCHING 3F à I © Type L -J Type 2,4 r= 2i 1. Y - V : G ate 2. F l " i > ! D ra in 3. y 4. F w - Í X ! D ra in — X I S o u rc e

FET 2SK23A

Abstract: 2SK107 2SK23A 2SK23A-8 2SK58 2SK23A9 FET+2SK23A
Contextual Info: SO N Y « 2SK23A Silicon N C hannel Ju n ctio n FET • Â S îD C -to -V H F Use. L o w Noise. High R e liab ility • Economical Typ e: 2 S K 1 0 7 • Dual T y p e : 2SK58 Absolute M axim um Ratings T É = 2 6 C Characteristics Sym bol 2SK23A -8 2 S K 2 3 A 9

2SK556

Abstract: 2SK557
Contextual Info: 2SK556,2SK557 -> i; a> N MOS FET SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING 5.0max. 1.5 1. Y — h Gate 2. Y V- -i > Drain 2.8 7 7 > ’ y (Flange) 3. 7 — X ; Source (Dimensions in mm) (TO-3P) ABSOLUTE MAXIMUM RATINGS m Kw y s a — > h •

2sk540

Abstract: NEC SINGAPORE J22686 NEC 701 K 2056
Contextual Info: NEC N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR 2SK540 ELECTRON DEVICE DESCRIPTION The 2SK540 is designed fo r use in ECM Impedance Converter. PACKAGE DIMENSIONS in m illim e te rs inches |yfs| = 1.5 mS TYP. 4.2 MAX. (0.165 MAX.) ( V DS = 5.0 V , V GS = 0, f = 1.0 kHz)

3773 P

Abstract: 2SK515 3773P F0236 IJBT VDS50 T108 TRANSISTOR MARKING X31
Contextual Info: NEC Junction Field Effect Transistor 2SK515 i& m ;& * m m N-Channel Silicon Junction Field-Effect Transistor Audio Frequency Amplifier ft / F E A T U R E PA C K A G E D IM EN SIO N S 7 1 - 0 7 7 ^ ' - , + , i m - i i k m m t L x m m Unit : mm x - i 2 .6 ± 0 .2

LA 7809

Abstract: 2SK545
Contextual Info: Ordering nu m b e r:EN Í 789B 2SK545 No.l789B N-Channel Junction Silicon FET SA%VO i Impedance Converter Applications A pplications •Impedance converter applications. • Infrared sensor. F eatu re s • Small I qss■Small Ciss. • Ultracompact package permitting 2SK545-applied sets to be compact.

2SK543

Abstract: transistor fet 2062
Contextual Info: SANYO SEMICONDUCTOR 2SK543 CORP SSE D 7*n7Q7b OOObTSO 7 T-31-ZS ♦ N -C h an n el M O S Silicon FET 2024A FM Tuner, VHF-Band Amp Applications 1791C Features . Low noise. NF=1.8dB typ f=100MHz • High power gain. PG=27dB typ(f=100MHz) . Small reverse transfer capacitance. cras=0.035pF(VDS=10V,f=1MHz)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SK545 Preliminary JFET IMPEDANCE CONVERTER APPLICATIONS 3  DESCRIPTION The UTC 2SK545 is an N-channel Junction field effect transistor. It uses UTC’s advanced technology to provide customers low CISS and low IGSS. The UTC 2SK545 is suitable for infrared sensor and impedance