1SS242 Search Results

Contextual Info: TOSHIBA {DISCR ET E/ O PTO } Í? 9097250 TOSHIBA DISCRETE/OPTO ]>ÊJ^ 7 2 5 0 67C 0 9 3 4 9 000^34^ 7 f D Y - 0 1SS242 7 - 0 T Silicon EpitaxiaLSchottky Barrier Type Diode UHF BAND MIXER APPLICATIONS. Unit in mm + Q25 L5-Q15 / / 0.65 û6±ai MAXIMUM RATINGS (Ta=25°C)

1SS242

Abstract: DIODE schottky 0.2v
Contextual Info: - 1SS242 4 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE AO UH F B A N D M IX ER A P P L IC A T IO N S . U n it in m m M A X IM U M R A TIN G S Ta = 25°C CHARACTERISTIC M aximum (Peak) Reverse Voltage Forward C urrent Junction Tem perature

1SS242

Contextual Info: 1SS242 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm UHF B A N D M IXER APPLICATIONS. «o ori +I Q M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL Vr m

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

isv149

Abstract: ISV101 iss314 ISV262 ISV172 1SS242 ISV103 ISV255 1SS239 ISV229
Contextual Info: V a ria b le C a p a c ita n c e D iode F5 Type No. Package Type No. ISV101 - ISV102 - ISV103 Package - ISV225 MINI SUPER MINI ISV147 ISV228 ISV149 HN1V01H, HN1V02H, HN2V02H Package Type No. FM8 Type No. Package Type No. Vr Ct V (pF) Ct V r(V) (pF) Application

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

1SS283

Abstract: 1SS281 1SS276 1SS237 HSR276 1SS239 1SS246 1SS271 1SS282 1SS285
Contextual Info: w 8= sss ss S „2 2 121 i d tt’ t t ’ i f i f i ; S 5 3 Sg 0 .0 5 0. 1 O a u . <3 a . ^ S- " 1 ï i B g g 0. 9 S S If 50 S 5 « S 0. 01 ¿ ¿ K c c i S S S ^ O 0. 5 tiri 0. 7 ^ g 35* 30 CM CsJ . .m o u i 150 >• S i 0. 5 0. 5 % % rs r- 1 V 30 O LT> o o

1SS276

Abstract: 1SS281 1SS246 1SS283 1SS237 HSR276 1SS239 1SS271 1SS282 1SS285
Contextual Info: w 8= sss ss S „2 2 121 i d tt’ t t ’ i f i f i ; S 5 3 Sg 0 .0 5 0. 1 O a u . <3 a . ^ S- " 1 ï i B g g 0. 9 S S If 50 S 5 « S 0. 01 ¿ ¿ K c c i S S S ^ O 0. 5 tiri 0. 7 ^ g 35* 30 CM CsJ . .m o u i 150 >• S i 0. 5 0. 5 % % rs r- 1 V 30 O LT> o o

1SS281

Abstract: HSR276 1SS239 1SS246 1SS271 1SS276 1SS282 1SS283 1SS285 1SS286
Contextual Info: w 8= sss ss S „2 2 121 i d tt’ t t ’ i f i f i ; S 5 3 Sg 0 .0 5 0. 1 O a u . <3 a . ^ S- " 1 ï i B g g 0. 9 S S If 50 S 5 « S 0. 01 ¿ ¿ K c c i S S S ^ O 0. 5 tiri 0. 7 ^ g 35* 30 CM CsJ . .m o u i 150 >• S i 0. 5 0. 5 % % rs r- 1 V 30 O LT> o o

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

1SS281

Abstract: 1ss237 1SS283 1SS246 1SS239 HSR276 1SS271 1SS276 1SS282 1SS285
Contextual Info: w 8= sss ss S „2 2 121 i d tt’ t t ’ i f i f i ; S 5 3 Sg 0 .0 5 0. 1 O a u . <3 a . ^ S- " 1 ï i B g g 0. 9 S S If 50 S 5 « S 0. 01 ¿ ¿ K c c i S S S ^ O 0. 5 tiri 0. 7 ^ g 35* 30 CM CsJ . .m o u i 150 >• S i 0. 5 0. 5 % % rs r- 1 V 30 O LT> o o

SV153A

Abstract: Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66
Contextual Info: 3. BLOCK DIAGRAM OF RECOMMENDED PRODUCTS 3.1 RF DISCRETE DEVICES FOR AM TUNER Bi'Transistor PIN Diode Single TO-92 SM 1 SV 9 9 Double use SM Q SM TO-92 USM 1SV128 1SV271 1SV172 1S V 2 3 7 1SV252 MINI SM 2 SC 3 8 0 T M 2 SC 26 6 9 2SC2715 2 SC 94 1 T M 2SC2670

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

tbf819

Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
Contextual Info: 保守品種一覧表 [9] [ 9 ] 保守品種一覧表 次の品種が保守品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 保守品種 1 形 名 代替品種 形 名 代替品種

3sk fet

Abstract: transistor 2sk 4007F 2sk711 2SC388A S3275 2sk241 3SK257 transistor 2sk 161 2SK type
Contextual Info: 2. C H A R A C T E R IST IC S C H A R T 2.1 TRANSISTORS FOR TV TUNER MAX V e to APPLICATION E L E C T R IC A L C H A R A C T E R IS T IC S R A T IN G S le M T Y P . Pc Vce V CE V ) |m A | |mW) (V ) 2SC 362TM 40 50 2 5 0 30MIN 2SC 383TM 45 50 300 2SC388ATM

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

iss319

Abstract: 1SS283 1SS281 1SS237 HSM88WA 1SS239 1SS246 HSR2 HSR276 iSS295
Contextual Info: w 8= sss ss S „2 2 121 i d tt’ t t ’ i f i f i ; S 5 3 Sg 0 .0 5 0. 1 O a u . <3 a . ^ S- " 1 ï i B g g 0. 9 S S If 50 S 5 « S 0. 01 ¿ ¿ K c c i S S S ^ O 0. 5 tiri 0. 7 ^ g 35* 30 CM CsJ . .m o u i 150 >• S i 0. 5 0. 5 % % rs r- 1 V 30 O LT> o o

1ss283

Abstract: 495h HM 1211 1SS276 1SS281 1ss237 HSM88WA ISS319 1SS239 HSR276
Contextual Info: w 8= sss ss S „2 2 121 i d tt’ t t ’ i f i f i ; S 5 3 Sg 0 .0 5 0. 1 O a u . <3 a . ^ S- " 1 ï i B g g 0. 9 S S If 50 S 5 « S 0. 01 ¿ ¿ K c c i S S S ^ O 0. 5 tiri 0. 7 ^ g 35* 30 CM CsJ . .m o u i 150 >• S i 0. 5 0. 5 % % rs r- 1 V 30 O LT> o o

3120 tuner

Abstract: C5086 1SS242 1SV226 1SV204 2sc low noise C1923 1SS241 mos cascode 2SA1161
Contextual Info: [I] PRODUCT OUTLINE & EXPLANATION 1. SELECTION GUIDE PACKAGE TYPES & APPLICATION 1.1 TRANSISTORS FOR TV TUNER Package Style TO -92 A PPLICATIO N ♦ Super-Mini Super-Mini Quad (SO T-23 M O D ./ (S O T -143 M O D .) T O -23 6 M O D . ) * * % % " • UHF M IX

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or