2SC3937 Search Results

2SC3937G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3937G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For UHF band low-noise amplification • Package • Low noise figure NF • High forward transfer gain S21e2

2SC3937

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3937 Silicon NPN epitaxial planar type For UHF band low-noise amplification (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 3 2.1±0.1

2SC3937

Contextual Info: Transistors 2SC3937 Silicon NPN epitaxial planar type For UHF band low-noise amplification 0.425 Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10 0.9±0.1 3 • Low noise figure NF • High forward transfer gain S21e2

2SC3937

Contextual Info: Transistor 2SC3937 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 2.1±0.1 • Features 0.3–0 0.65 +0.1 0.425 1 3 2 Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3937G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For UHF band low-noise amplification • Package • Low noise figure NF • High forward transfer gain S21e2

2SC3937

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3937 Silicon NPN epitaxial planar type For UHF band low-noise amplification (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 5˚

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3937G Silicon NPN epitaxial planar type For UHF band low-noise amplification • Package • Low noise figure NF • High forward transfer gain S21e2 • High transition frequency fT

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3937 Silicon NPN epitaxial planar type For UHF band low-noise amplification (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 5˚

2SC4470

Abstract: 4892 2sc3904 2SC3356 2SC3609 2sc3828 2SC4901 2SC3585 2sc3613 2SC4928
Contextual Info: - m £ 2SC 4856 2SC 4857 2 SC 4858 % tt Manuf. T y p e No. = SANYO >¥ =n =# 2 SC 4859 2SC 4860 2SC 4861 2SC 4862 2 SC 4863 2SC 4866 2SC 4867 2SC 4868 2SC 4869 2 m B NEC 2SC3937 2SC4904 2SC3704 2SC3609 2SC4093 2SC4900 2SC3704 2SC4228 2SC4903 2SC3585 2SC4902

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3937 Silicon NPN epitaxial planar type For UHF band low-noise amplification (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10

Contextual Info: Panasonic Transistor 2SC3937 Silicon NPN epitaxial planer type For UHF band low -noise am plification Unit: mm 0.425 • Features • • • • Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3937G Silicon NPN epitaxial planar type For UHF band low-noise amplification • Features ■ Package • Low noise figure NF • High forward transfer gain S21e2 • High transition frequency fT

2SC3937

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3937 Silicon NPN epitaxial planar type For UHF band low-noise amplification (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10

2SC3937

Contextual Info: Transistor 2SC3937 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 2.1±0.1 • Features 0.3–0 0.65 +0.1 0.425 1 3 2 Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3937 Silicon NPN epitaxial planar type For UHF band low-noise amplification (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC4542

Abstract: 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555
Contextual Info: - 192 - SU £ Type No. tt £ Manuf. □— A 2SC 4506 H # SANYO M £ TOSHIBA B a NEC 2SC3789 2SC2551 2SC3209 2SC 4507 ✓ 2SC4106 2SC2553 2SC2518 B HITACHI Ai Ä dr ii FUJITSU fâ T MATSUSHITA 2SC 4508 * 2SC4107 2SC3626 2SC4423 2SC3306 2SC 4510 2SC4424 2SD1313

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SC5072

Abstract: 2SC4698 4685 4686 2SC470-3 2SC4703 4670K 2SC4001 2SC4176 2SC4443
Contextual Info: - 196 - m s T y p e No. 2 SC 4666 tt « Manuf. J z B m SANYO TOSHIBA K S. 2SC 4667 Ä S. 2SC4443 2SC 4668 S tB ä 2SC4523 2SD1412 » S tc 2SC4406 2SC4250 2SC 4669 > fö T 2SC 4670 2SC 4671 / = 2SC 4672 □— A = 2SC 4674 B 4 "" # 2SC 4678 ÜL S. 2SC 4679

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463