2SK20 Search Results

2SK2038

Abstract: Transistor TOSHIBA 2SK
Contextual Info: TOSHIBA 2SK2038 Field Effect Transistor U n it in m m Silicon N Channel MOS Type rc-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance • R ds (ON) = 1 (Typ-) • High Forward Transfer Adm ittance - Yfs' = 3.OS (Typ.)

2SK2030

Contextual Info: T O S H IB A 2SK2030 Field Effect Transistor Unit in mm Silicon N Channel M OS Type ti-MOS IV High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " r d s (ON) = 0.1 OQ (Typ.) • High Forward Transfer Adm ittance - Yfs = 3 .OS (Typ.)

MOSFET marking smd

Abstract: marking kp SMD TRANSISTOR MARKING 93 MOSFET smd marking mosfet vth 5v vth mos 2SK2033
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK2033 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High input impedance. 0.4 3 1 0.55 Enhancement-Mode +0.1 1.3-0.1 +0.1 2.4-0.1 Low gate threshold voltage :Vth=0.5 to 1.5V 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: 2SK2044 AP A d v a n c e d P e rfo rm a n c e Series _ Vdss“ 600V N Channel Power M OSFET £4286 F e a tu r e s • Low ON resistance. ■Very high-speed sw itching. • H igh-speed diode (trr= 120ns). ■M icaless package facilitatin g mounting.

Contextual Info: SILICON N CHANNEL MOS TYPE 2SK2035 U n it in mm HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCHING APPLICATIONS. • • • High Input Impedance. Low Gate Threshold Voltage : Vt,h = 0.5~1.5V Excellent Sw itching Tim es : ton = 0.16/^s typ. toff^ 0-15;“ 3 (typ-)

2SK208

Contextual Info: 2SK208 SILICON N CHANNEL JUNCTION TYPE G E N E R A L PURPOSE AND IMPEDANCE CONVERTER Unit in mm AND CONDEN SER MICROPHONE A P P L I C A T I O N S . + 0 .5 2 .5 — 0 .3 FEATURES: + 0 .2 5 1.5 - Q . l 5 . High Breakdown Voltage : V q q s =-50V dc5 +! d • High Input Impedance : Içgg=-1.0nA Max.

Contextual Info: 2SK2025-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK208

Contextual Info: T O S H IB A 2SK208 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK208 GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER U nit in mm MICROPHONE APPLICATIONS + 0.5 2.5-0.3 • + 0.25 1.5-0.15 High Breakdown Voltage :V GD g = —50V •

2SK2010

Contextual Info: Ordering num ber:EN 4319 _ 2SK2010 No.4319 N -Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • M icaless package facilitating mounting. A b so lu te M axim um R a tin g s at Ta = 25°C

2SK955

Abstract: 2SK906A 2SK1134 2SK899 2SK900 2SK2001 2SK1660 2SK725 2SK2000A 2SK905
Contextual Info: COLLNER SEMICONDUCTOR INC b3E D • 223Û7T2 00Dlfl70 fc.05 ■ COL < |_ MOSFETs F-l Series Low Rds ON 50-900 V olts Device TvDe 2S K 1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1 549 2SK902 2SK901A

1A smd mosfet

Abstract: 2SK2094
Contextual Info: IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK2094 Features TO-252 Low on-resistance Fast switching speed +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low-voltage drive 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max

2SK2072-01L

Contextual Info: 2SK2072-01L,S N-channel MOS-FET FAP-IIA Series 800V > Features - 2,1Ω 6A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2059

Contextual Info: 2SK2059 L , 2SK2059 S Silicon N Channel MOS FET Application DPAK-1 High speed power switching Features • • • • 4 4 12 Low on–resistance High speed switching No Secondary Breakdown Suitable for Switching regulator, DC – DC converter 3 2, 4 12 3

TO-3P Jedec package outline

Abstract: 2SK1911 2SK2096 DSA003639
Contextual Info: 2SK2096 Silicon N-Channel MOS FET ADE-208-1344 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

2SK2037

Contextual Info: 2SK2037 TOSHIBA Field Effect Transistor Silicon N Channel Type 2SK2037 High Speed Switching Applications Analog Switching Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.28 µs typ.

Contextual Info: TOSHIBA 2SK2009 i ^ \c i TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE nnq Unit in mm HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. • • • • • • + 0.5 25 -0 .3 + 0.25 High Input Impedance. Low Gate Threshold Voltage

Contextual Info: 2SK2075 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low Drive Current • No secondary breakdown • Suitable for Switching regulator Outline 2SK2075 Absolute Maximum Ratings Ta = 25 °C

Contextual Info: 2SK2084 L , 2SK2084(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter

Contextual Info: T O SH IB A 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K2 0 1 3 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION Unit in mm 3.2 ± 0 .2 10 ± 0 .3 • High Breakdown Voltage : V j g g = 180V • High Forward Transfer Admittance : |Yfs | = 0 .7 S Typ.)

Contextual Info: TO SHIBA 2SK2037 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL TYPE 2SK2037 Unit in mm HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCHING APPLICATIONS. • • • High Input Impedance. Low Gate Threshold Voltage Excellent Switching Times . 1.2 5 ± 0 .1

K2044

Abstract: ITR02378 2SK2044LS ITR02376 ITR02377 ENN4286B
Contextual Info: Ordering number : ENN4286B 2SK2044LS N-Channel Silicon MOSFET 2SK2044LS Ultrahigh-Speed Switching Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. High-speed diode trr=120ns . Micaless package facilitating mounting. unit : mm

2SK2089

Contextual Info: TO SHIBA 2SK2089 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SII.5 2SK2089 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm TO-22QFL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 10.3M AX APPLICATIONS.

Contextual Info: 2SK2099-01 L,S FU JI F A P -IIA S e r ie s > Features - N -c h a n n e l M O S -F E T 25 0V 0 ,8 5 D 6A 20 W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof

2SK245

Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H