2SK273 Search Results

all mosfet equivalent book

Abstract: transistor equivalent book bc 149 mosfet catalogue 2SK2731 T146 free transistor equivalent book
Contextual Info: Transistors Interface and switching 30V, 200mA 2SK2731 •F eatu re s 1 ) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to use in parallel. •E xte rn a l dimensions (Units: mm) 2.9±0.2

Hitachi DSA00276

Contextual Info: 2SK2736 Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-544 Z 1st. Edition Sep. 1997 Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220CFM

Hitachi DSA00276

Contextual Info: 2SK2735 L , 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-543 (Z) 1st. Edition Sep. 1997 Features • Low on-resistance R DS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2

Hitachi DSA002780

Contextual Info: 2SK2730 Silicon N Channel MOS FET High Speed Power Switching ADE-208-493 A 2nd. Edition Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain Flange 3. Source 2SK2730

Hitachi DSA00276

Contextual Info: 2SK2737 Silicon N Channel MOS FET High Speed Power Switching ADE-208-533B Z 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 S 3 1. Gate 2. Drain

Contextual Info: Transistors Switching 300V, 16A 2SK2739 • F e a tu re s •E x te r n a l dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area), 4) G ate-source voltage guaranteed at Vgss = ± 3 0 V 5) Easily designed drive circuits.

MOSFET SC-59 power

Abstract: 2SK2731 T146
Contextual Info: 2SK2731 Transistors Interface and switching 30V, 200mA 2SK2731 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) zFeatures 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive(4V). ROHM : SMT3 E I A J : SC-59 zApplication Switching

2SK2734

Abstract: Hitachi DSA00238
Contextual Info: 2SK2734 Silicon N Channel MOS FET High Speed Power Switching ADE-208-520 1st. Edition Features • Low on-resistance R DS on = 0.04Ω typ (at VGS = 10 V, I D = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A Outline TO-92MOD. D G

2SK2737

Abstract: Hitachi DSA00238
Contextual Info: 2SK2737 Silicon N Channel MOS FET High Speed Power Switching ADE-208-533B Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 S 3 1. Gate 2. Drain 3. Source

K2733

Abstract: 2-10P1B 2SK2733
Contextual Info: 2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2733 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 8.0 Ω (typ.) High forward transfer admittance : |Yfs| = 0.9 S (typ.)

mosfet 10V 10A

Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET 2SK2735S
Contextual Info: IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK2735S Features TO-252 Low on-resistance typ. +0.15 1.50-0.15 RDS = 20 m +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 High speed switching 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max

Hitachi DSA00276

Contextual Info: 2SK2738 Silicon N Channel MOS FET High Speed Power Switching ADE-208-483 Z 1st. Edition Jun 1997 Features • Low on-resistance R DS = 15 mΩ typ • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G 1 2

Hitachi DSA002749

Contextual Info: 2SK2737 Silicon N Channel MOS FET High Speed Power Switching ADE-208-533B Z 3rd. Edition June 1, 1998 Features • Low on-resistance R DS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 S 3 1. Gate 2. Drain

2SK2739

Contextual Info: Transistors Switching 300V, 16A 2SK2739 •F e a tu re s 1) Low on-res¡stance. 2) High-speed switching. 3) Wide SOA (safe operating area). External dimensions (Units: mm) 4) Gate-source voltage guaranteed at V gss = ± 3 0 V 5) Easily designed drive circuits.

Contextual Info: 2SK2737 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-533B Z 3rd. Edition June 1, 1998 Features • Low on-resistance • R ds(o„) = 10 m il typ. 4V gate drive devices. • High speed switching Outline 2SK2737 Absolute Maximum Ratings (Ta = 25 °C)

2SK2738

Abstract: Silicon N Channel MOS FET High Speed Power Switching Hitachi DSA00338
Contextual Info: 2SK2738 Silicon N Channel MOS FET High Speed Power Switching ADE-208-483 1st. Edition Features • Low on-resistance R DS = 15 mΩ typ • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2738 Absolute Maximum Ratings Ta = 25°C

ld 1086 18

Contextual Info: 2SK2736 Silicon N Channel DV-L MOS FET High Speed Power Switching HITACHI Features Low on-resistarice R DS nn 20 mil: typ. (VGS = 10V, Iu = 15 A) • 4V gate drive devices. • High speed switching Outline TQ -220C FM 1. Gate 2. Drain 3. Source 1084 ADE-208-544

K2733

Abstract: 2-10P1B 2SK2733
Contextual Info: 2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2733 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 8.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 0.9 S (typ.)

2SK273

Contextual Info: T O SH IB A 2SK2733 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSHI 2 S K2 7 3 3 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE

2SK2684

Abstract: 2SK2736 Hitachi DSA00238
Contextual Info: 2SK2736 Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-544 1st. Edition Features • Low on-resistance R DS on = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 S 3 1. Gate

2SK2684

Abstract: 2SK2735 DPAK-2 PACKAGE Hitachi DSA00238 2SK273
Contextual Info: 2SK2735 L , 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-543 1st. Edition Features • Low on-resistance R DS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2 4 4 D 1 2

2SK2730-E

Abstract: 2SK2730 PRSS0004ZE-A SC-65
Contextual Info: 2SK2730 Silicon N Channel MOS FET High Speed Power Switching REJ03G1028-0300 Previous: ADE-208-493A Rev.3.00 Sep 07, 2005 Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline RENESAS Package code: PRSS0004ZE-A

2SK2737

Abstract: 2SK2737-E PRSS0003AE-A
Contextual Info: 2SK2737 Silicon N Channel MOS FET High Speed Power Switching REJ03G1031-0400 Previous: ADE-208-533B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0003AE-A

BL-5j

Contextual Info: Transistors Interface and switching 30V, 200mA 2SK2731 •F e a tu re s 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to use in parallel. •E x te rn a l dimensions (Units: mm) 2.9±0.2