2SK2684 Search Results

2SK2684

Abstract: Hitachi DSA00117
Contextual Info: 2SK2684 L , 2SK2684(S) Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-542(Z) 1st. Edition September 1997 Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching

Contextual Info: 2SK2684 L , 2SK2684(S) Silicon N Channel D V -L MOS FET High Speed Power Switching HITACHI ADE-208-542(Z) 1st. Edition September 1997 Features • Low on-resistance RDS(on) = 20 m il typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching

Hitachi DSA00281

Contextual Info: 2SK2684 L , 2SK2684(S) Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-542 (Z) 1st. Edition Sep. 1997 Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline

2SK2684

Abstract: 2SK2684L-E 2SK2684STL-E PRSS0004AE-A
Contextual Info: 2SK2684 L , 2SK2684(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1022-0200 (Previous: ADE-208-542) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

Contextual Info: 2SK2684 L , 2SK2684(S) Silicon N Channel DV-L MOS FET High Speed Power Switching HITACHI Features • Low on-resistance RDS(on) = 20 mfì typ. (VGS = 10V, ID = 15 A) • 4-V gate drive devices. • High speed switching Outline LDPAK ADE-208-542(Z) 1st. Edition

2SK2684

Abstract: Hitachi DSA00238
Contextual Info: 2SK2684 L , 2SK2684(S) Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-542 1st. Edition Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline LDPAK 4 D

Hitachi DSA002758

Contextual Info: 2SK2684 L , 2SK2684(S) Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-542 1st. Edition Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline 2SK2684(L), 2SK2684(S)

Contextual Info: 2SK2684 L , 2SK2684(S) Silicon N Channel DV-L MOS FET High Speed Power Switching HITACHI Features • Low on-resistance ^DS(on) = 20 m£2 typ. (V os = 10V, I D = 15 A) • 4V gate drive devices. • High speed switching Outline LDPAK 1018 ADE-208-542 1st. Edition

Hitachi DSA00276

Contextual Info: 2SK2736 Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-544 Z 1st. Edition Sep. 1997 Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220CFM

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

Hitachi DSA00276

Contextual Info: 2SK2735 L , 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-543 (Z) 1st. Edition Sep. 1997 Features • Low on-resistance R DS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

TO220CFM

Abstract: 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R
Contextual Info: Power Mosfet 5th Generation The Performance Revolution Literature Order Number Revision Number 5/14/97 Hitachi Europe, Ltd. European Marketing Power Mosfet 5th Generation - The Performance Revolution 1.1 RDS ON 4.5m Ohm - A new standard has been set With the introduction of the new D5-Series HITACHI started a new age of RDS (ON)

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

ld 1086 18

Contextual Info: 2SK2736 Silicon N Channel DV-L MOS FET High Speed Power Switching HITACHI Features Low on-resistarice R DS nn 20 mil: typ. (VGS = 10V, Iu = 15 A) • 4V gate drive devices. • High speed switching Outline TQ -220C FM 1. Gate 2. Drain 3. Source 1084 ADE-208-544

2SK2684

Abstract: 2SK2736 Hitachi DSA00238
Contextual Info: 2SK2736 Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-544 1st. Edition Features • Low on-resistance R DS on = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 S 3 1. Gate

2SK2684

Abstract: 2SK2735 DPAK-2 PACKAGE Hitachi DSA00238 2SK273
Contextual Info: 2SK2735 L , 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-543 1st. Edition Features • Low on-resistance R DS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2 4 4 D 1 2

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK2684

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List