HAT1023R Search Results

Contextual Info: HAT1023R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP- 8 5 6 7 8 D D D D 1 ,2 ,3 Source 4 Gate 5, 6 , 7, 8 Drain

Hitachi DSA00280

Contextual Info: HAT1023R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-436G Z 8th. Edition Jun. 1997 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D 4 G

Contextual Info: HAT1023R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-436 G 8th. Edition Features • Low on-resistance • Capable o f 2.5 V gate drive • Low drive current • High density mounting Outline S O P -8 5 6 7 8 D D D D % 1 ,2 , 3

HAT1023R

Abstract: MS-012AA Hitachi DSA0073
Contextual Info: HAT1023R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-436 F Z 7th. Edition October. 1996 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D

silicon P channel MOS FET J 350

Contextual Info: HAT1023R Target Specification Silicon P Channel Power MOS FET HITACHI Application 2nd. Edition May. 1 995 Preliminary S O P -8 High speed power switching Features • • • • Low on—resistance Capable of 2.5V gate drive Low drive current High density mounting

Hitachi DSA002751

Contextual Info: HAT1023R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-436 G Z 8th. Edition June 1, 1997 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D

Hitachi DSA002779

Contextual Info: HAT1023R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-436 G 8th. Edition Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline HAT1023R Absolute Maximum Ratings Ta = 25°C

HAT1023R

Abstract: HAT1023R-EL-E
Contextual Info: HAT1023R Silicon P Channel Power MOS FET High Speed Power Switching REJ03G1145-0900 Previous: ADE-208-436G Rev.9.00 Sep 07, 2005 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D

Hitachi DSA001650

Contextual Info: HAT1023R Silicon P-Channel Power MOS FET Prelimianry November 1996 Application High speed power switching Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D 4 G 5

HAT1023R

Abstract: MS-012AA DSA003733
Contextual Info: HAT1023R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-436 G Z 8th. Edition June 1997 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D 4

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

2SK2829

Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
Contextual Info: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

2SK2225

Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

converter DC-DC SOP-8

Contextual Info: HITACHI ïOP-8 Package/5.0mQ typ. On-resistance Hitachi Power MOS FET D7-L Series "SM B"* Hitachi Power MOS FET( D7-L Series): Dramatically improved efficiency for electronic equipment Applications ^ F e a tu re and Merit 3C-DC converter power supplies for laptop computers

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List