10JNS Search Results

Contextual Info: HAT1023R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-436 G 8th. Edition Features • Low on-resistance • Capable o f 2.5 V gate drive • Low drive current • High density mounting Outline S O P -8 5 6 7 8 D D D D % 1 ,2 , 3

stm 8322

Abstract: 48Z08 MK48Z09
Contextual Info: r z 7 S G S -T H O M S O N *> 7 M G W T O ilL I^ G M D ! M K 4 8 Z 0 8 ,1 8 M K 4 8 Z 0 9 ,1 9 CMOS 8K x 8 ZEROPOW ER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE